SIEMENS Silicon Schottky Diodes @ General-purpose diodes for high-speed switching @ Circuit protection @ Voltage clamping @ High-level detecting and mixing & Available with CECC quality assessment ESD: Electrostatic discharge sensitive device, observe handling precautions! BAS 70... VPSOS164 Type Marking Ordering Code | Pin Configuration Package) (tape and reel) BAS 70 73s Q62702-A118 1 3 |SOT-23 of>}-____o EHAQ7002 BAS 70-04 74s Q62702-A730 3 Lp pt EHA07005 @ BAS 70-05 75s Q62702-A711 3 j f 4 2 EHAO7004 @ BAS 70-06 76s Q62702-A774 3 i 4 F 2 EHAO7006 1) For detailed information see chapter Package Outlines. Semiconductor Group 221 01.97 SIEMENS BAS 70... @ General-purpose diodes for high-speed switching @ Circuit protection @ Voltage clamping @ High-level detecting and mixing Available with CECC quality assessment ESD: Electrostatic discharge sensitive device, observe handling precautions! 1 VPS05178 Type Marking Ordering Code | Pin Configuration Package") (tape and reel) @ BAS 70-07 _| 77s Q62702-A846 4 DI 1 SOT-143 3 BI 2 HAO700S Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage Va 70 Vv Forward current Ir 70 mA Surge forward current, f < 10 ms Irsm 100 Total power dissipation Prot 250 mw BAS 70 Ts < 66 C?) BAS 70-04... Ts < 40 C?) Junction temperature Tj 150 Cc Operating temperature range Top ~~ 55... + 150 Storage temperature range Tag ~ 55... + 150 Thermal Resistance Junction - ambient?) Rina KAN BAS 70 < 405 BAS 70-04 ... < 575 Junction - soldering point Rtas BAS 70 < 335 BAS 70-04 ... < 435 1) For detailed information see chapter Package Outlines. 2) Max. 450 mW per package. 3) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 em? Cu. Semiconductor Group 222 SIEMENS BAS 70... Electrical Characteristics per Diode at 7a = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. | max. DC characteristics Breakdown voltage Vier) 70 - ~ Vv In=10pA Reverse current Ir pA Va = 50V - - 0.1 Va=70V - _ 10 Forward voltage Ve mV Ik= 1mA - 375 410 le =10mMA - 705 750 Ir =15 mA - 880 1000 Diode capacitance Cr ~ 1.6 2 pF Va =0, f= 1 MHz Charge carrier life time t - - 100 ps le=25mA Differential forward resistance n - 30 - Q Ir =10 mA, f= 10 kHz Semiconductor Group 223 SIEMENS BAS 70... Characteristics per Diode at 7 = 25 C, unless otherwise specified. Forward current Ir = f (Vr) Reverse current /n = f (Var) 1 0 BAS 70... HBO0042 EHBOD04S fe oma 10! 10 107! 0.0 0.5 1.0 v1.5 V; Diode capacitance Cr = f (Va) f= 1 MHz BAS 70... FHBO044 2.0 0.5 0.0 60 80 0 20 40 Vp Semiconductor Group 192 BAS_20.. lea 10! 10 1907! 0 20 40 60 Vv 80 Vp Differential forward resistance n = f (Ir) f= 10 kHz 103 BAS 760... EHBOOO4S nq 10 0.4 1 10 mA 100 I, 224 SIEMENS BAS 70... Forward current /- = f (Ta*; Ts) * Package mounted on epoxy coe 151 100 BAS 70 EHBOO i mA _ Lp f 40 20 0 50 100 C s150 > kh Semiconductor Group 225