NPN Plastic Darlington Complementary Silicon Power Transistors BD777 PNP BD776 BD778 . . . designed for general purpose amplifier and high-speed switching applications. BD780 * * High DC Current Gain * * * hFE = 1400 (Typ) @ IC = 2.0 Adc Collector-Emitter Sustaining Voltage -- @ 10 mAdc VCEO(sus) = 45 Vdc (Min) -- BD776 = 60 Vdc (Min) -- BD777, 778 = 80 Vdc (Min) -- BD780 Reverse Voltage Protection Diode Monolithic Construction with Built-in Base-Emitter output Resistor *ON Semiconductor Preferred Device IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII III IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII III IIII III IIIIIIIIIII III IIII III IIII III IIIIIIIII IIIIIIIIIII III IIII III IIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIIIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III DARLINGTON 4-AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45, 60, 80 VOLTS 15 WATTS MAXIMUM RATINGS Symbol BD776 BD777 BD778 BD780 Unit VCEO 45 60 80 Vdc Collector-Base Voltage VCB 45 60 80 Vdc Emitter-Base Voltage VEB 5.0 Vdc IC 4.0 6.0 Adc Base Current IB 100 mAdc Total Device Dissipation TC = 25C - Derate above 25C PD 15 0.12 Watts W/C TJ, Tstg -65 to +150 C Rating Collector-Emitter Voltage Collector Current -- Continuous Peak Operating and Storage Junction Temperature Range CASE 77-08 TO-225AA TYPE THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristics RJC 8.34 C/W Thermal Resistance, Junction to Ambient RJA 83.3 C/W Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 January, 2001 - Rev. 8 1 Publication Order Number: BD776/D BD777 BD776 BD778 BD780 12 1.2 8.0 0.8 4.0 0.4 PD, POWER DISSIPATION (WATTS) 1.6 0 20 TA PD, POWER DISSIPATION (WATTS) 16 40 80 60 100 120 140 0 160 T, TEMPERATURE (C) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III Figure 1. Power Derating ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 45 60 80 -- -- -- Vdc -- -- -- 100 100 100 -- -- 1.0 100 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IO = 10 mAdc, IB = 0) BD776 BD777, BD778 BD780 Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) Adc ICEO BD776 BD777, BD778 BD780 Adc Collector Cutoff Current (VCB = Rated, VCEO(sus), IE = 0) (VCB = Rated, VCEO(sus), IE = 0, IC = 100C) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO -- 1.0 HFE 750 -- Collector-Emitter Saturation Voltage (IC = 1.5 Adc, IB = 6 mAdc) VCE(Sat) -- 1.5 Vdc Base Emitter Saturation Voltage (IC = 1.5 Adc, IB = 6 mAdc) VBE(Sat) -- 2.5 Vdc Base-Emitter On Voltage (IC = 1.5 Adc,VCE = 3 Vdc) VBE(On) -- 2.3 Vdc VEC -- 2.0 Vdc Adc ON CHARACTERISTICS DC Current Gain (IC = 2.0 Adc, VCE = 3.0 Vdc) Output Diode Voltage Drop (IEC = 2.0 Adc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = 1.0 Adc, VCE = 2.0 Vdc) fT 20 -- MHz Symbol Min Typ Unit Turn-On Time (IC = 250 mA/VCE = 2 V) BD775-777 BD776-778-780 ton -- -- 250 150 ns Turn-Off Time (IC = 250 mA, VCE = 2 V) BD775-777 BD776-778-780 toff -- -- 600 400 ns http://onsemi.com 2 BD777 BD776 BD778 BD780 5.0 5.0 ms TJ = 150C 1.0 0.1 0.05 dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECONDARY BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO BD775, 776 BD777, 778 BD780 0.02 0.01 1.0 2.0 50 70 30 3.0 5.0 7.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1500 1000 500 400 300 TJ = 25C VCE = 2.0 Vdc 200 100 100 BD776, 778, 780 700 Figure 2. Active Region Safe Operating Area PNP BD776 BD778 BD780 777 2000 500 s 1.0 ms 2.0 0.5 3000 100 s hFE , DC CURRENT GAIN IC, COLLECTOR CURRENT (AMP) 10 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 3.0 Figure 3. Typical DC Current Gain COLLECTOR NPN BD777 BD779 BASE COLLECTOR BASE 150 150 EMITTER EMITTER Figure 4. Darlington Circuit Schematic http://onsemi.com 3 4.0 5.0 BD777 BD776 BD778 BD780 PACKAGE DIMENSIONS CASE 77-08 TO-225AA TYPE ISSUE V -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M DIM A B C D F G H J K M Q R S U V 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE M ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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