Semiconductor Group 17 03.96
Type Ordering Code
BSM 101 AR C67076-S1018-A2
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage VDS 50 V
Drain-gate voltage, RGS = 20 kΩVDGR 50
Gate-source voltage VGS ± 20
Continuous drain current, TC= 105 ˚C ID200 A
Pulsed drain current, TC= 105 ˚C ID puls 600
Operating and storage temperature range Tj,Tstg – 55 … + 150 ˚C
Power dissipation, TC = 25 ˚C Ptot 700 W
Thermal resistance, chip-case RthJC ≤ 0.18 K/W
Insulation test voltage2), t = 1 min. Vis 2500 Vac
Creepage distance, drain-source – 16 mm
Clearance, drain-source – 11
DIN humidity category, DIN 40 040 – F –
IEC climatic category, DIN IEC 68-1 – 55/150/56
1) See chapter Package Outline and Circuit Diagrams.
2) Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with
DIN 50 014, IEC 146, para. 492.1.
SIMOPAC® Module BSM 101 AR
VDS = 50 V
ID= 200 A
RDS(on) = 3.0 mΩ
●Power module
●Single switch
●N channel
●Enhancement mode
●Package with insulated metal base plate
●Package outline/Circuit diagram: 11)
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Semiconductor Group 18
BSM 101 AR
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = 0.25 mA V(BR)DSS 50 – – V
Gate threshold voltage
VGS = VDS,ID = 1 mA VGS(th) 2.1 3.0 4.0
Zero gate voltage drain current
VDS = 50 V, VGS = 0
Tj = 25 ˚C
Tj = 125 ˚C
I DSS
–
–50
300 250
1000
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 IGSS – 10 100 nA
Drain-source on-state resistance
VGS = 10 V, ID = 200 A RDS(on) – 2.6 3.0 mΩ
Dynamic Characteristics
Forward transconductance
VDS ≥2×ID×RDS(on) max.,I
D
= 200 A gfs 156 200 – S
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz Ciiss –1824nF
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz Coss –912
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz Crss –34
Turn-on Time ton (ton = td (on) + tr)
VCC = 40 V, VGS = 10 V
ID = 200 A, RG = 3.3 Ω
td (on) – 280 – ns
tr– 220 –
Turn-off Time toff (toff = td (off) + tf)
VCC = 40 V, VGS = 10 V
ID = 200 A, RG = 3.3 Ω
td (off) – 220 –
tf–60–
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Semiconductor Group 19
Electrical Characteristics (cont’d)
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Reverse diode
Continuous reverse drain current
TC = 25 ˚C IS– – 200 A
Pulsed reverse drain current
TC = 25 ˚C ISM – – 600
Diode forward on-voltage
IF = 400 A , VGS = 0 VSD 1.25 1.6 V
Reverse recovery time
IF = IS, diF/dt = 100 A/µs, VR = 30 V trr 400 – ns
Reverse recovery charge
IF = IS, diF/dt = 100 A/µs, VR = 30 V Qrr 3.5 µC
BSM 101 AR
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Semiconductor Group 20
Characteristics at Tj = 25 ˚C, unless otherwise specified.
Power dissipation Ptot = f (TC)
parameter: Tj = 150 ˚C
Safe operating area ID = f (VDS)
parameter: single pulse, TC = 25 ˚C,
Tj≤ 150 ˚C
Typ. output characteristics ID = f (VDS)
parameter: = 80 µs pulse test
Typ. transfer characteristic ID = f (VGS)
parameter: = 80 µs pulse test, VDS = 25 V
BSM 101 AR
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Semiconductor Group 21
Continuous drain-source current
ID = f(TC)
parameter: VGS ≥ 10 V, T j = 150 ˚C
Drain source on-state resistance
RDS(on) = f(ID)
parameter: VGS
Drain-source breakdown voltage
V(BR)DSS =b×V(BR)DSS (25 ˚C)
Drain source on-state resistance
RDS (on) = f(Tj)
parameter: ID = 200 A; VGS = 10 V
BSM 101 AR
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Semiconductor Group 22
Typ. capacitances C = f (VDS)
parameter: VGS = 0, f = 1 MHz Gate threshold voltage VGS(th) = f (Tj)
parameter: VDS =VGS,ID= 1 mA
(spread)
BSM 101 AR
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Semiconductor Group 23
Transient thermal impedance ZthJC = f (tp)
parameter: D = tp/T
Typ. gate charge VGS =f(QGate)
parameter: IDpuls = 330 A
BSM 101 AR
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