Parameter Max. Units
VDS Drain- Source Voltage 20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 6.5
ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 5.2 A
IDM Pulsed Drain Current 20
PD @TA = 25°C Power Dissipation 2.0
PD @TA = 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
1/18/05
Parameter Max. Units
RθJA Maximum Junction-to-Ambient62.5 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com 1
IRLMS2002PbF
HEXFET® Power MOSFET
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The Micro6™ package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
VDSS = 20V
RDS(on) = 0.030Ω
Description
lUltra Low On-Resistance
lN-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
l2.5V Rated
lLead-Free
Top View
1
2
D
G
A
D
D
D
S
34
5
6
Micro6™
PD- 95675
IRLMS2002PbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.016 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.030 VGS = 4.5V, ID = 6.5A
––– ––– 0.045 VGS = 2.5V, ID = 5.2A
VGS(th) Gate Threshold Voltage 0.60 ––– 1.2 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 13 ––– ––– S VDS = 10V, ID = 6.5A
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
QgTotal Gate Charge ––– 15 22 ID = 6.5A
Qgs Gate-to-Source Charge ––– 2.2 3.3 nC VDS = 10V
Qgd Gate-to-Drain ("Miller") Charge ––– 3.5 5.3 VGS = 5.0V
td(on) Turn-On Delay Time ––– 8.5 ––– VDD = 10V
trRise Time ––– 11 ––– ID = 1.0A
td(off) Turn-Off Delay Time ––– 36 ––– RG = 6.0Ω
tfFall Time ––– 16 ––– RD = 10Ω
Ciss Input Capacitance ––– 1310 ––– VGS = 0V
Coss Output Capacitance ––– 150 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance ––– 36 ––– ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.7A, VGS = 0V
trr Reverse Recovery Time ––– 19 29 ns TJ = 25°C, IF = 1.7A
Qrr Reverse Recovery Charge ––– 13 20 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
20
2.0
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
S
D
G
IRLMS2002PbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
5.3A
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.50V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.50V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
1
10
100
1.5 2.0 2.5 3.0 3.5
V = 15V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
IRLMS2002PbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
04812 16 20 24
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D5.3A
V = 10V
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
1ms
10ms
1 10 100
0
400
800
1200
1600
2000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
6.5A
IRLMS2002PbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Typical Vgs(th) Variance Vs.
Juction Temperature
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
-50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
-0.40
-0.30
-0.20
-0.10
0.00
0.10
0.20
VGS(th) , Variace ( V )
Id = 250µA
IRLMS2002PbF
6www.irf.com
Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 12. Typical On-Resistance Vs.
Gate Voltage
2.0 3.0 4.0 5.0 6.0 7.0 8.0
VGS, Gate -to -Source Voltage ( V )
0.020
0.025
0.030
0.035
0.040
RDS(on) , Drain-to -Source Voltage ( Ω )
Id = 5.3A
010 20 30 40
ID, - Drain Current (A )
0.02
0.04
0.06
0.08
0.10
RDS ( on) , Drain-to-Source On Resistance ( Ω )
VGS = 4.5V
VGS= 2.5V
IRLMS2002PbF
www.irf.com 7
Micro6™ P
Micro6 (SOT23 6L) Part Marking Information
Micro6 (SOT23 6L) Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS RECOMMENDED FOOTPRINT
DD
DD
S
G
1 2 3
6 5 4
0 -10
O O
0.60 (.023 )
0.10 (.004 )
0.20 (.007 )
0.09 (.004 )
6X
1.30 (.051 )
0.90 (.036 )
-C-
0.15 (.006 )
MAX.
1.45 (.057 )
0.90 (.036 )
6 SURFACES
0.10 (.004 )
0.50 (.019 )
0.35 (.014 )
6X
2X
0.95 ( .0375 )
1.75 (.068 )
1.50 (.060 )
-A-
3.00 (.118 )
2.80 (.111 ) -B-
3.00 (.118 )
2.60 (.103 )
1 2 3
6 5 4
6X 0. 65 (.025 )
2.20 (.087 )
6X (1.06 (.042 )
2X 0.95 (.0375 )
NOTES :
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : MILLIMETER.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
0.15 (.006 ) M C A S B S
E
H = IRLMS6803 2005
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
W = (27-52) IF PRECEDED BY A LETTER
A = I R L MS 1 90 2
B = IRLMS1503
C = I R L MS 670 2
D = IR LMS 5703
F = IRLMS4502
E = IRLMS6802
G = I R L MS 200 2
PART NUMBER CODE REF ERENCE:
PART NUMBER
Y = YEAR
W = WE E K
TOP CODE
LOT
X2402010
WEEK
WOR K
0442004
2001
YEAR
2002
2003
011
Y
2
3
02
03
2007
2005
2006
2009
2008
7
5
6
8
9
D
A
W
B
C
WEEK
WOR K
25
26
2002
YEAR
2001
2003
2004
28B
Y
A27
C
D
29
30
Y
Z
B
W
A
C
D
(as shown here) indicates Lead-Free.
Note: A li ne above the wor k week
51
2008
2006
2007
2009
2010
H
F
G
J
K50
52
Y
X
Z
IRLMS2002PbF
8www.irf.com
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/05
Micro6 Tape & Reel Information
Dimensions are shown in milimeters (inches)
8mm
FEED DIRECTION
4mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
9.90 ( .390 )
8.40 ( .331 )
178.00
( 7.008 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
