2012-03-29
Rev. 2.6 Page 1
BSS670S2L
OptiMOS Buck converter series
Product Summary
VDS 55 V
RDS(on) 650 mΩ
ID0.54 A
Feature
• N-Channel
• Enhancement mode
• Logic Level
PG-SOT 23
Gate
pin1
Drain
pin 3
Source
pin 2
Marking
BSs
Type Package Tape and Reel
BSS670S2L PG-SOT 23 H6327: 3000 pcs/reel
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TA=25°C
TA=70°C
ID
0.54
0.43
A
Pulsed drain current
TA=25°C
ID puls 2.2
Gate source voltage VGS ± 20 V
Power dissipation
TA=25°C
Ptot 0.36 W
Operating and storage temperature Tj , Tstg -55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Avalanche energy, single pulse ID = 0.54 A, RG = 25 Ω 1) EAS 8.1 mJ
Avalanche rated 1)
•
•
•
•
•
• •
1)
Valid from devices with date code 0604 onwards
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
ESD Class
JESD22-A114-HBM
Class 0
2012-03-29
Rev. 2.6 Page 2
BSS670S2L
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 3) RthJS - - 290 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
RthJA
-
-
-
-
350
300
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=1mA
V(BR)DSS 55 - - V
Gate threshold voltage, VGS = VDS
ID=2.7µA
VGS(th) 1.2 1.6 2
Zero gate voltage drain current
VDS=55V, VGS=0, Tj=25°C
VDS=55V, VGS=0, Tj=150°C
IDSS
-
-
0.01
1
0.1
10
µA
Gate-source leakage current
VGS=20V, VDS=0V
IGSS -1 100 nA
Drain-source on-state resistance
VGS=4.5V, ID=270mA
RDS(on) -430 825 mΩ
Drain-source on-state resistance
VGS=10V, ID=270mA
RDS(on) -346 650
2)
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2012-03-29
Rev. 2.6 Page 3
BSS670S2L
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS≥2*ID*RDS(on)max,
ID=0.54A
0.6 1.2 -S
Input capacitance Ciss VGS=0, VDS=25V,
f=1MHz
-56 75 pF
Output capacitance Coss -13 18
Reverse transfer capacitance Crss -7 10
Turn-on delay time td(on) VDD=30V, VGS=4.5V,
ID=0.54A,
RG=130Ω
-9 14 ns
Rise time tr-25 37
Turn-off delay time td(off) -21 31
Fall time tf-24 32
Gate Charge Characteristics
Gate to source charge Qgs VDD=40V, ID=0.54A -0.19 0.25 nC
Gate to drain charge Qgd -0.57 0.86
Gate charge total QgVDD=40V, ID=0.54A,
VGS=0 to 10V
-1.7 2.26
Gate plateau voltage V(plateau) VDD=40V, ID=0.54A -3.1 -V
Reverse Diode
Inverse diode continuous
forward current ISTA=25°C - - 0.38 A
Inv. diode direct current, pulsed ISM - - 2.2
Inverse diode forward voltage VSD VGS=0, IF=0.54A -0.8 1.1 V
Reverse recovery time trr VR=30V, IF=lS,
diF/dt=100A/µs
-51 64 ns
Reverse recovery charge Qrr -22 28 nC
2012-03-29
Rev. 2.6 Page 4
BSS670S2L
1 Power dissipation
Ptot = f (TA)
0 20 40 60 80 100 120 °C 160
TA
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
W
0.38 BSS670S2L
Ptot
2 Drain current
ID = f (TA)
parameter: VGS≥ 10 V
0 20 40 60 80 100 120 °C 160
TA
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
A
0.6 BSS670S2L
ID
4 Transient thermal impedance
ZthJS = f (tp)
parameter : D = tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
K/W BSS670S2L
ZthJS
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA = 25 °C
10 -1 10 0 10 1 10 2
VVDS
-3
10
-2
10
-1
10
0
10
1
10
A
BSS670S2L
ID
R DS(on) = V DS / I D
DC
10 ms
1 ms
100 µs
tp = 23.0µs
2012-03-29
Rev. 2.6 Page 5
BSS670S2L
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
00.5 11.5 22.5 33.5 4 V 5
VDS
0
0.5
1
1.5
2
A
3
ID
3V
3.5V
4V
4.5V
10V
6V
5V
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
00.2 0.4 0.6 0.8 A 1.2
ID
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
mΩ
1500
RDS(on)
3.5V
4V
4.5V
5V
6V
10V
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
00.5 11.5 22.5 33.5 4 V 5
VGS
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
A
2.2
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
00.4 0.8 1.2 1.6 A 2.2
ID
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
S
2.2
gfs
2012-03-29
Rev. 2.6 Page 6
BSS670S2L
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 270 mA, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
200
400
600
800
1000
1200
1400
1600
mΩ
1900 BSS670S2L
RDS(on)
typ
98%
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
-60 -20 20 60 100 °C 180
Tj
0
0.5
1
1.5
V
2.5
VGS(th)
2 µA
10 µA
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz
0 5 10 15 20 V30
VDS
0
10
1
10
2
10
3
10
pF
C
Ciss
Coss
Crss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
00.4 0.8 1.2 1.6 22.4 V3
VSD
-2
10
-1
10
0
10
1
10
A
BSS670S2L
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
2012-03-29
Rev. 2.6 Page 7
BSS670S2L
13 Typ. gate charge
VGS = f (QGate)
parameter: ID = 0.54 A pulsed
00.4 0.8 1.2 1.6 2nC 2.6
QGate
0
2
4
6
8
10
12
V
16 BSS670S2L
VGS
0,8 VDS max
DS max
V
0,2
14 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
-60 -20 20 60 100 °C 180
Tj
50
52
54
56
58
60
62
V
66 BSS670S2L
V(BR)DSS
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rig hts Reserved.
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or other persons may be endangered.
2012-03-29
Rev. 2.6 Page 7
BSS670S2L
