Semiconductor Group 1 1997-11-01
SMT Multi TOPLED
Vorläufige Daten / Preliminary Data
Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Typ
Type Bestellnummer
Ordering Code
SFH 7221 on request
GPL06965
CC
EA
32
41 0.4
0.6
0.18
0.12
typ
0.1
0.5
1.1
3.7
3.3
0.7
0.9
1.7
2.1
0.6
0.8
2.3
2.1
2.6
3.0
3.0
3.4
(2.4)
Package marking
SFH 7221
Wesentliche Merkmale
●Geeignet für Vapor-Phase Löten und
IR-Reflow Löten
Features
●Suitable for vapor-phase and IR-reflow
soldering
Semiconductor Group 2 1997-11-01
SFH 7221
Grenzwerte
Maximum Ratings
Bezeichnung
Description Symbol
Symbol Wert
Value Einheit
Unit
IRED Transistor
Betriebstemperatur
Operating temperature range Top – 55 ... + 100 – 55 ... + 100 ˚C
Lagertemperatur
Storage temperature range Tstg – 55 ... + 100 – 55 ... + 100 ˚C
Sperrschichttemperatur
Junction temperature Tj+ 100 + 100 ˚C
Durchlaßstrom (LED)
Forward current (LED) IF100 – mA
Kollektorstrom (Transistor)
Collector current (Transistor) IC–15mA
Stoßstrom
Surge current
t≤10 µs, D = 0.005
IFM 2500 75 mA
Sperrspannung (LED)
Reverse voltage (LED) VR5–V
Kollektor-Emitter Spannung
(Transistor)
Collector-emitter voltage
(Transistor)
VCE –35V
Verlustleistung
Total power dissipation Ptot 180 165 mW
Wärmewiderstand Sperrschicht / Umgebung
Thermal resistance junction / ambient
Montage auf PC-Board* (Padgröße ≥ 16 mm 2)
mounting on pcb* (pad size ≥ 16 mm 2)
Sperrschicht / Lötstelle
junction / soldering joint
Rth JA
Rth JS
500
400
450
–
K/W
K/W
* PC-board: G30/FR4
Hinweis / Notes
Die angegebenen Grenzdaten gelten für einen Chip.
The stated maximum ratings refer to one chip.
Semiconductor Group 3 1997-11-01
SFH 7221
Kennwerte IRED (TA = 25 ˚C)
Characteristics IRED
Bezeichnung
Description Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der Strahlung
Wavelength of radiation
IF = 100 mA, tp = 20 ms
λpeak 880 nm
Spektrale Bandbreite bei 50% von Imax,IF= 100 mA
Spectral bandwidth at 50 % of Imax,IF= 100 mA ∆λ 80 nm
Abstrahlwinkel
Viewing angle ϕ±60 Grad
deg.
Aktive Chipfläche
Active chip area A0.16 mm2
Abmessungen der aktiven Chipfläche
Dimensions of active chip area L× B
L×W0.4 × 0.4 mm
Schaltzeiten, Ie von 10 % auf 90 % und von 90 % auf 10 %
Switching times, Ie from 10 % to 90 % and from 90 % to 10 %
IF = 100 mA, RL = 50 Ω
tr,tf0.5 µs
Kapazität
Capacitance
VR= 0 V, f = 1 MHz
Co25 pF
Durchlaβspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µsVF
VF
1.5 (≤ 1.8)
3.0 (≤ 3.8) V
V
Sperrstrom
Reverse current
VR= 5 V
IR0.01 (≤ 1)µA
Gesamtstrahlungsfluβ
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe23 mW
Temperaturkoeffizient von Ie bzw. Φe
Temperature coefficient of Ie bzw. Φe
IF = 100 mA, IF = 100 mA
TCI– 0.5 %/K
Temperaturkoeffizient von VF
Temperature coefficient of VF
IF = 100 mA
TCV– 2 mV/K
Temperaturkoeffizient von λ
Temperature coefficient of λ
IF = 100 mA
TCλ+ 0.25 nm/K
Semiconductor Group 4 1997-11-01
SFH 7221
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant intensity Ie in axial direction
at a solid angle of Ω = 0.01 sr
IRED Radiation characteristics Irel = f (ϕ)
Phototransistor Directional characteristics Srel =f (ϕ)
Bezeichnung
Description Symbol
Symbol Werte
Values Einheit
Unit
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie> 4 mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 µs
Ie typ. 48 mW/sr
0
0.2
0.4
1.0
0.8
0.6
ϕ
1.0 0.8 0.6 0.4
0˚10˚20˚40˚ 30˚
OHL01660
50˚
60˚
70˚
80˚
90˚
100˚ 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
Semiconductor Group 5 1997-11-01
SFH 7221
Kennwerte Fototransistor (TA = 25 °C, λ = 880 nm)
Characteristics Phototransistor
Bezeichnung
Description Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 860 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ380 ... 1150 nm
Bestrahlungsempfindliche Fläche (∅ 240 µm)
Radiant sensitive area (∅ 240 µm) A0.045 mm2
Abmessung der Chipfläche
Dimensions of chip area L×B0.45 x 0.45 mm × mm
Abstand Chipoberfläche zu Gehäuseober-
fläche
Distance chip front to case surface
H0.5 ... 0.7 mm
Halbwinkel
Half angle ϕ±60 Grad
deg.
Kapazität
Capacitance
VCE = 0 V, f = 1 MHz, E= 0
CCE 5.0 pF
Dunkelstrom
Dark current
VCE = 25 V, E= 0
ICEO 1 (≤200) nA
Fotostrom
Photocurrent
Ee = 0.1 mW/cm2,VCE = 5 V
IPCE ≥16 µA
Anstiegszeit/Abfallzeit
Rise time/Fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr,tf7µs
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
IC = 5 µA, Ee = 0.1 mW/cm2
VCEsat 150 mV
Semiconductor Group 6 1997-11-01
SFH 7221
IRED
Forward current IF = f (VF)
TA = 25 ˚C
Max. permissible forward current
IF = f (TA)
Rel luminous intensity IV / IV(10 mA) = f (IF)
TA = 25 ˚C
Relative spectral emission
Irel =f (λ)
Perm. pulse handling capability IF = f (tp)
Duty cycle D = parameter, TA = 25 ˚C
10
OHR00881
F
V
-3
-2
10
-1
10
0
10
1
10
0123456V8
A
Ι
F
OHR00883
0
F
Ι
0
20
40
60
80
100
120
20 40 60 80 100 120
mA
˚C
T
A
= 450 K/W
thjA
R
10
OHR00878
Ι
e
F
Ι
-3
-2
10
-1
10
0
10
1
10
2
10
0
10 10
1
10
2
10
4
mA
e
Ι
(100mA)
3
10
0
750
Ι
rel
OHR00877
800 850 900 950 nm 1000
20
40
60
80
%
100
λ
10
Ι
F
OHR00886
1
2
10
3
10
4
10
mA
-5
10 s
=
D
F
Ι
T
DC
0.005=
D
p
t
T
t
p
p
t
0.5
0.2
0.1
0.01
0.02
0.05
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Semiconductor Group 7 1997-11-01
SFH 7221
Phototransistor
Rel.spectral sensitivity Srel =f (λ)
Total power dissipation
Ptot = f (TA)
Dark current
ICEO = f (TA), VCE = 5 V, E = 0
Photocurrent IPCE =f (VCE),
Ee = Parameter
Capacitance
CCE =f (VCE), f = 1 MHz, E = 0
Photocurrent IPCE =f (Ee), VCE = 5 V
Dark current
ICEO = f (VCE), E = 0
Photocurrent IPCE/IPCE25o = f (TA),
VCE = 5 V
λ
OHF01121
0
rel
S
400 600 800 1000 1200
20
40
60
80
%
100
nm
OHF00871
tot
P
00
40
80
120
160
mW
200
20 40 60 80 ˚C 100
T
A
T
OHF01530
A
CEO
Ι
-1
10
10
0
10
1
10
2
10
3
-25
nA
0 25 50 75 100
˚C
V
OHF01529
CE
PCE
Ι
0
0
10
10
-2
10
-1
mA
V
5 10 15 20 25 30 35
mW
cm
2
0.1
0.25
2
cm
mW
0.5
2
cm
mW
1
2
cm
mW
V
OHF01528
CE
-2
10
CE
C
10
-1
10
0
10
1
10
2
0V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
pF
E
OHF00312
e
PCE
Ι
10
-1
10
-3
10
-2
10
0
10
0
10
1
10
2
10
3
W/cm
2
m
A
µ
V
OHF01527
CE
CEO
Ι
-3
10
10
-2
10
-1
10
0
10
1
0 5 10 15 20 25 30 35V
nA
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100
Ι
PCE
PCE
Ι
25
C
