Die no. C-37 NPN small signal transistor These epitaxial planar NPN silicon transistors are gold doped. Features available in the following packages: SST3 (SST, SOT-23) SMT3 (SMT, SC-59) UMTS (UMT, SOT-323), see page 300 Features e collector-to-emitter breakdown voltage, BVcEeg = 40 V (min) at lo =1.0mMmA low capacitance, Co, = 4 pF * complete amplifier and switching specifications * current gain specified from 10 tA to 100 mA * high transition frequency, typically fy = 300 MHz min at Ic = 10 mA Device types Package style Part number Part marking SST3 (SoT-23) |SST3904 RIA SMT3 (Sc-59) |MMST3904 RIA UMT3 (SoT-323) |UMT3904 RIA Applications * general purpose, switching and amplifier transistor Dimensions (Units : mm) SST3 2.940.2 1920.2 0.987977 0.4520. Rw! ory | 7] z Zhe - 3 at ___] 4 LFS - ! 0.15 oe -G6 : 0.98 ,0.95 Top view | [0.47055 5 (1) Emitter (2) Base (3) Collector SMT3 2.920.2 1.940.2 8 Min. Dw! al : eB 1.6704 2.80.2 2.4 @uj_ tT ee 0.18 e:oq}| 0.95 1 TOP VIEW | |0.4*8:), ach lead has same dimensions (1) Emitter (2) Base (3) Collector 1.30.1 0.940.1 TOP VIEW (1) Emitter (2) Base (3) Collector Surface Mount Transistors 359C-37 Transistors (US/European) NPN Absolute maximum ratings (T, = 25C) Parameter Symbol Limits Unit Conditions Collector-to-base voltage Vcso 60 Vv Collector-to-emitter voltage | Voce 40 Vv Emitter-to-base voltage Veso 5 Vv Collector current Io 200 mA |DC SST3 (SOT-23) 200 figeipat on SMT3 (SC-59) Pc 200 mW_ |For derating, see derating curve following UMT3 (SOT-323) 200 Junction temperature T; -55 ~ +150 C Electrical characteristics (unless otherwise noted, T, = 25C) (Sheet 1 of 2) Parameter Symbol| Min |Typical| Max Unit Conditions Collector-to-base _ breakdown voltage BVcao |) 60 100 Vi jlo = 10 pA Collector-to-emitter _ breakdown voltage BVceo | 40 60 Vi jlo=1.0mA Emitter-to-base _ breakdown voltage BVeso 5 8 Vi jle= 10 HA Collector cutoff current IcBo 50 nA |VeR=25V Emitter cutoff current lEBo 50 nA |Veg=4V 50 Io =0.1 MA, Vee = 1.0V 70 Io = 1.0MA, Voge = 1.0 V 100 175 300 Io = 10 MA, Vog = 1.0 V DC current gain Nee 60 Io =50 MA, Veg = 1.0V 30 Io = 100 mA, Voce = Lov 80 Io = 50 mA, Vee =5.0V 60 Ig = 100 MA, Voge = 5.0V Collector-to-emitter V 0.08 | 0.20 V Ic/lg = 10 mA/1.0 mA saturation voltage CE(sat) 0.13 | 030 Ic/lg = 50 MA/S mA Base-to-emitter saturation | 0.70 | 0.85 V__ |lo/lg = 10 mA/1.0 mA voltage BE (sat) 0.75 | 0.95 Ic/lg = 50 MAIS MA AC current gain Nte 100 400 Io = 1.0 MA, Voce = 10 V, f = 1 KHz Collector output _ ne. capacitance Cob 2 4 pF Vep = 5.0 V, le = 90, f= 1 MHz 360 ROAM Surface Mount TransistorsTransistors (US/European) NPN C-37 Electrical characteristics (unless otherwise noted, T, = 25C) (Sheet 2 of 2) Parameter Symbol] Min |Typical|] Max Unit Conditions sapecitance Crp 4 6 pF |Veg =5.0V, Io =0, f= 1 MHz Transition frequency fr 300 400 MHz |Io=10MA, Vog = 20 V, f = 100 MHz Noise figure NF 2 5 dB 05 COMA Voces SOV. Ag = 1 KO, Rise time t, 35 ns |Ilc=10MA, Ip, =1.0 MA, Veg =3 V Delay time ty 35 ns |lp =10 MA, Ip, = 1.0 MA, Veco =3 V Turn on time ton 40 70 ns {le =10 MA, Igy = 1.0 MA, Veo =3 V Storage time ts 200 ns |l=10 MA, Igy =Ip2 = 1.0 mA Fall time tt 50 ns |Il= 10 MA, Igy =igo=1.0mA Turn off time tots 120 250 ns |I= 10 MA, Ip; =Ig2= 1.0 MA Note: Minus sign for PNP transistor is omitted Electrical characteristic curves t co o te 10 Ie~COLLECTOR CURRENT (mA) Nn 0 Voe(sat)COLLECTOR EMITTER SATURATION VOLTAGE(Y) Ig=O nA 0 0 10 20 0.1 1.0 to 100 Ie-COLLECTOR CURRENT (mA Vee-COLLECTOR-EMITTER VOLTAGE (V) Ic COLLECTO (mA) Figure 1 Figure 2 Surface Mount Transistors RBM 361C-37 Transistors (US/European) NPN Ta=25C z < ey 3 2 a ke = 0.t 1.0 10 100 1900 Ip-COLLECTOR CURRENT (mA) Figure 3 Ta=t25C 3 Ta=25C a= 3 | 5 Ta=- 3 a iy 0.1 1.0 10 100 1000 Ip-COLLECTOR CURRENT (mA) Figure 4 Ta=25C Vce = 5V f= IkHz 3 t I ez gx 3 o < y <= 0.01 0.1 1.0 10 100 Ip-COLLECTOR CURRENT (mA) Figure 5 362 ROM Surface Mount TransistorsTransistors (US/European) NPN C-37 Ta= 25C [cla = 10 Vpe(sat) BASE EMITTER SATURATION VOLTAGE (V) 0.1 1.0 10 100 Ig-COLLECTOR CURRENT (mA) Figure 6 Ta=25C Ic/Ig= 10 z dai = - z! oS z= a 2 y Jo I 1.0 10 100 Ic-COLLECTOR CURRENT (mA) Figure 8 00 Ta=25C Ig= 101g: = 10lp2 g tw) = = rf 100 5 e 2 1.0 10 106 tc-COLLECTOR CURRENT (mA) Figure 10 o - n Vge(onyBASE EMITTER VOLTAGE (V) a2 = 0.1 1.0 10 100 Ie-COLLECTOR CURRENT (mA) Figure 7 Ta=25C Iota = 10 t,-RISE TIME (ns) t.0 (00 10 le-COLLECTOR CURRENT (mA) Figure 9 Ta=25C Voc = 40V =10 t-FALL TIME (ns) .0 10 100 Ic-COLLECTOR CURRENT (mA) Figure 11 Surface Mount Transistors 363C-37 Transistors (US/European) NPN & g 5 = & 0. 0.1 1.0 10 100 REVERSE BIAS VOLTAGE (V) Figure 12 _}000 z = : = = 2 5 z a z 3 : Bo 1.0 10 100 Ig-COLLECTOR CURRENT (mA) Figure 14 10 Vee =25V =< i 3 7 o Ee 3 5 10n 4 3 In 8 o 0 25 50 rk) 100 125 150 Ta-AMBIENT TEMPERATURE (C) Figure 16 = OOMHz 200MHz lad x 3 > & = & Et. 4 8 8 > | Ol 1.0 10 100 Ig-COLLECTOR CURRENT (mA) Figure 13 Ta=25C Ig lmA hie =3.84k0 hie = 141 hre=.09x 1075 hoa = 5.58 4S 0.t I 10 100 Ie-COLLECTOR CURRENT (mA) Figure 15 h PARAMETER NORMALIZED TO |mA e 8 = 2 # 3 g 0.01 0.) | 10 Ic-COLLECTOR CURRENT (mA) Figure 17 364 Surface Mount TransistorsTransistors (US/European) NPN C-37 Ta=25C Vee =5V i= 100 2A Rg= 10k NF NOISE FIGURE (dB) 10 00 tk 10k 00k f-FREQUENCY (Hz) Figure 18 100k 100k g g 10k YW 10k < z Ee < 2 & 8 w Fd Mad & a > | 5 1 3 Qo a na & o \ 0.01 O.4 \ 10 0.01 A ! 10 le-COLLECTOR CURRENT (mA) le-COLLECTOR CURRENT (mA) Figure 19 Figure 20 Surface Mount Transistors ROM 365C-37 Transistors (US/European) NPN : POWER DISSIPATION (%) S > a Po PoMax, ty o Q 25 50 ri) (00 (25 150 T, AMBIENT TEMPERATURE (C) Figure 21 366 ROHM Surface Mount Transistors