n-channel JFETs x Siliconix designed for... 9 Suman @ Small-Signal Amplifiers BENEFITS = Oscill tors e gperates from High Supply BVess > 50 V *ABSOLUTE MAXIMUM RATINGS (25C) Gate-Drain or Gate-Source Voltage (Note 1) . . . -50V See Seven 7 Gate Current . 2... 2 1 ee ee eee ee) 6 10MA Total Device Dissipation at (or below) 25C Free-Air Temperature (Note 2)... . . . 300mW Storage Temperature Range ... . . . -65to+200C Lead Temperature s (1/16 from case for 10 seconds) . ... . =. 300C s *ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) 2N3821 2N3822 Characteristic Unit Test Conditions Min Max Min Max yoy Gate Reverse C a Ot | nA | vag =-30V, Vps=0 ate Reverse Current =- . = 2} | oss 0.1 "or | wa | 98 Ds 160C 3 BVGgss Gate-Source Breakdown Voltage -50 -50 Ig =-1uA, Vos =0 4 ; VGS(off) Gate-Source Cutoff Voltage -4 -6 Vv Vos = 168 V, Ip =0.5nA | + -0.5 -2 Vps = 15 V, Ip = 50 uA 5|/cC| Vacs Gate-Source Voltage p -1 4 Vps = 18 V, Ip = 200 uA 6 toss Saturation Drain Current (Note 3), 0.5 25 2 10 mA Vos = 15 V, Ves 20 Common-Source Forward _ ? Sts Transconductance (Note 3) 1500 4500 3000 6500 f=1kHz 8 lyfgl common Source Forward 1500 3000 umho f= 100 MHz C -S 8] >| to Comment 0 20 Vos= 16 V. Vos=0 tet te ~~] N . Common-Source Input 10] a | Ciss Capacitance 8 6 M pF f=1MHz 1 t Cc Common-Source Reverse Transfer 3 3 c | vrss Capacitance Vos = 158 V, Veg = 0, 12| | NF Noise Figure s s | ae | OS Gs Rgen = 1 meg, BW = 5 Hz 4 Shoe f=10Hz | - Equivalent Short-Circuit Input av i 13 ey Noise Voltage 200 200 viz Vos = 15 V, Vgs = 0, BW*=5Hz | * JEDEC Registered Data. NRL | NOTES: f 1. Due to symmetrical geometry, these units may be operated with source and drain leads interchanged. 2. Derate linearly to 175C free-air temperature at rate of 2 mW/C. 3. These parameters are measured during a 2 msec interval 100 msec after d-c power is applied. 1979 Siliconix incorporated 3-9 TESENT LZSENZ xIUOD