CQ220-25B CQ220-25D CQ220-25M CQ220-25N 25 AMP TRIAC 200 THRU 800 VOLTS TO-220 CASE MAXIMUM RATINGS: (Tc=25C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage VpDRM RMS On-State Current (T=90C) (RMS) Peak One Cycle Surge (t=8.3ms) ITsmM I2t Value for Fusing (t=8.3ms) I2t Peak Gate Power (tp=10ys) Pom Average Gate Power Dissipation Pg (AV) Peak Gate Current (tp=10us) Iom Peak Gate Voltage (tp=10us) Vom Critical Rate of Rise of On-State Current Repetitive (f=60Hz) di/dt Storage Temperature Tstg Junction Temperature ae Thermal Resistance Osa Thermal Resistance Ojc Central DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ220-25B series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER CQ220 CQ220 CQ220 CQ220 25B -:25D -25M = -25N UNITS 200 400 600 800 Vv 25 A 150 A 94 As 40 Ww 1.0 Ww 10 A 16 Vv 10 A/us -40 to +150 1S -40 to +125 C 60 C/W 1:7 C/W ELECTRICAL CHARACTERISTICS: (Tc=25C unless otherwise noted) SYMBOL IDRM IDRM dv/dt TEST CONDITIONS Rated Voprm Rated Vprm: Tc=125C Vp=12V, RL=10, QUAD |, Il, Ill Vp=12V, RL=102, QUAD IV lp=100mA Vp=12V, RL=10@, QUAD |, Il, III Vp=12V, RL =102, QUAD IV I7M=35A, tp=380ys Vp=2/s Vorm: RGK=*: Te=125C 70 MIN TYP MAX UNITS 10 pA 2.0 mA dA 30 mA 28.2 60 mA 18.4 50 mA 1:03 1250 Vv 1.74 2:00 Vv 1.80 Vv 6.0 Vi/us R2 (24-September 2004) et CQ220-25B ey rd CQ220-25D Semiconductor Corp. eee 25 AMP TRIAC 200 THRU 800 VOLTS TO-220 CASE - MECHANICAL OUTLINE " I-E salle | of ~ | en R2 LEAD CODE: 1) MT1 2) MT2 3) GATE NOTE: TAB IS COMMON TO PIN 2 (MT2) MARKING CODE: FULL PART NUMBER TO-220 (REV: R2) R2 (24-September 2004) 71