VP0808L, VP1008L
Vishay Siliconix
Document Number: 70218
S-00530—Rev. C, 03-Apr-00 www.vishay.com FaxBack 408-970-5600
11-1
P-Channel Enhancement-Mode MOSFET Transistors
Part Number V(BR)DSS Min (V) rDS(on) Max () VGS(th) (V) ID (A)
VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28
VP1008L –100 5 @ VGS = –10 V –2 to –4.5 –0.28
High-Side Switching
Low On-Resistance: 2.5
Moderate Threshold: –3.4 V
Fast Switching Speed: 40 ns
Low Input Capacitance: 75 pF
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Power Supply, Converter Circuits
Motor Control
1
TO-226AA
(TO-92)
Top View
S
D
G2
3
VP0808L
VP1008L
Parameter Symbol VP0808L VP1008L Unit
Drain-Source Voltage VDS –80 –100
V
Gate-Source V oltage VGS 30 30
V
Continuous Drain Current
(T 150C)
TA= 25C
ID
–0.28 –0.28
A
(TJ = 150C) TA= 100C
I
D–0.17 –0.17 A
Pulsed Drain CurrentaIDM –3 –3
Power Dissipation
TA= 25C
PD
0.8 0.8
W
Power
Dissipation
TA= 100C
P
D0.32 0.32
W
Maximum Junction-to-Ambient RthJA 156 156
C/W
Maximum Junction-to-Case RthJC
C/W
Operating Junction and
Storage Temperature Range TJ, Tstg –55 to 150 C
Notes
a. Pulse width limited by maximum junction temperature.
VP0808L, VP1008L
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
11-2 Document Number: 70218
S-00530—Rev. C, 03-Apr-00
Limits
VP0808L VP1008L
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –10 mA –110 –80 –100
V
Gate-Threshold V oltage VGS(th) VDS = VGS, ID = –1 mA –3.4 –2 –4.5 –2 –4.5 V
Gate
-
Body Leakage
IGSS
VDS = 0 V, VGS = "20 V "100 "100
nA
Gate
-
Body
Leakage
I
GSS TJ = 125C"500 "500
nA
ZGVl DiC
I
VDS = –80 V, VGS = 0 V –10
A
Zero Gate Voltage Drain Current
IDSS
TJ = 125C –500
mA
Zero
Gate
Voltage
Drain
Current
I
DSS VDS = –100 V, VGS = 0 V –10 m
A
TJ = 125C –500
On-State Drain CurrentbID(on) VDS = –15 V, VGS = –10 V –2 –1.1 –1.1 A
Drain
-
Source On
-
Resistance
b
rDS(on)
VGS = –10 V, ID = –1 A 2.5 5 5
W
Drain
-
Source
On
-
Resistanceb
r
DS(on) TJ = 125C 4.4 8 8
W
Forward T ransconductance bgfs VDS = –10 V, ID = –0.5 A 325 200 200
S
Common Source
Output Conductancebgos VDS = –7.5 V, ID = –0.1 A 0.45 mS
Dynamic
Input Capacitance Ciss
V25VV0V
75 150 150
F
Output Capacitance Coss VDS = –25 V, VGS = 0 V
f = 1 MHz 40 60 60 pF
Reverse T ransfer Capacitance Crss
f 1 MHz
18 25 25
Switchingc
Turn
-
On T ime
td(on)
V25VR47W
11 15 15
Turn
-
On
Time
trVDD = –25 V, RL = 47 W
ID
^
–
0.5 A, VGEN
=
–
10 V
30 40 40
ns
Turn
-
Off Time
td(off)
I
D
^
–
0
.
5
A
,
V
GEN = –
10
V
RG = 25 W20 30 30
ns
Turn
-
Off
Time
tf20 30 30
Notes
a. For DESIGN AID ONL Y, not subject to production testing.. VPDV10
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
VP0808L, VP1008L
Vishay Siliconix
Document Number: 70218
S-00530—Rev. C, 03-Apr-00 www.vishay.com FaxBack 408-970-5600
11-3
–20
–16
–12
–8
–4
0
–3.8 V
0 –0.4 –0.8 –1.2 –1.6 –2.0
–3.6 V
–3.4 V
–3.2 V
Ohmic Region Characteristics Output Characteristics for Low Gate Drive
On-Resistance vs. Drain Current Normalized On-Resistance
vs. Junction Temperature
Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage
VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)
– Drain Current (A)
ID
– Drain Current (mA)
ID
– Drain Current (A)
ID
– On-Resistance (rDS(on)
VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V)
ID – Drain Current (A)
VGS = –10 V
TJ = 25C TJ = 25C
TJ – Junction Temperature (C)
rDS(on)
– Drain-Source On-Resistance
(Normalized)
VGS = –4.0 V
–2.0
0–1–2–3–4–5
–1.6
–1.2
–0.8
–0.4
0
–9 V
–8 V
–7 V
–6 V
–5 V
–4 V
–0.5
–0.4
–0.3
00 –2 –10
–0.2
–0.1
–4 –6 –8
125C
TJ = –55C
10
8
6
00 –0.5 –3.0
4
2
–1.0 –1.5 –2.0 –2.5
7
0 –4 –8 –12 –16 –20
6
5
4
0
3
2
1
ID= 0.1 A
0.5 A 1.0 A
TJ = 25C
2.00
1.75
0.50 –50 –10 150
1.50
1.25
30 70 110
1.00
0.75
VGS = –10 V
ID = 0.5 A
VDS = –10 V
VGS = –10 V
25C
rDS(on)
– Drain-Source On-Resistance ( )
)
VP0808L, VP1008L
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
11-4 Document Number: 70218
S-00530—Rev. C, 03-Apr-00
–15.0
–12.5
–10.0
00100 500
–7.5
–5.0
200 300 400
–2.5
–80 V
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1 1 10010 1 K
10 50 100
100
10
120
200
160
120
00 –10 –50
80
40
–20 –30 –40
–10
–1
–0.01
–1.0 –1.5 –4.5
–0.1
–2.0 –2.5 –3.0 –3.5 –4.0
Threshold Region Capacitance
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Gate Charge Drive Resistance Effects on Switching
Normalized Effective T ransient
Thermal Impedance
t1 – Square W ave Pulse Duration (sec)
VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V)
–55C
Qg – Total Gate Charge (pC)
125C
– Drain Current (mA)I D
C – Capacitance (pF)
– Gate-to-Source Voltage (V)VGS
t – Switching Time (ns)
Crss
Coss
Ciss
VGS = 0 V
f = 1 MHz
ID = –0.5 A
VDS = –50 V
VDD = –25 V
RL = 50
VGS = 0 to –10 V
ID = –500 mA
td(on)
td(off)
tr
tf
TJ = 150C
25C
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 156C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1
Notes:
PDM
t2
VDS = –5 V
RG – Gate Resistance ()
