Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but th ere is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regar ding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Renesas Technology
Corpo r ation assumes no respon sibility for any damage, liability or other loss resulting from the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
HD74CBT3244
Octal FET Bus Switch
ADE-205-643 (Z)
Preliminary
Rev. 0
August 2001
Description
The HD74CBT3244 provides eight bits of high speed TTL-compatible bus switching in a standard ’244
device pinout. The low on state resistance of the switch allows connections to be made with minimal
propagation delay. The device is organized as two 4-bit low impedance switches with separate output
enable (OE) inputs. When OE is low, the switch is on, and data can flow from port A to port B, or vice
versa. When OE is high, the switch is open, and the high impedance state exists between the two ports.
Features
Standard ’244 type pinout.
Minimal propagation delay through the switch.
5 switch connection between two ports.
TTL-compatible input levels.
Ultra low quiescent power.
-Ideally suited for notebook applications.
HD74CBT3244
Rev.0, Aug. 2001, page 2 of 9
Function Table
Input OE
OEOE
OE Function
L A port = B port
H Disconnect
H: High level
L: Low level
Pin Arrangement
1
1OE
1A1
2B4
1A2
2B3
1A3
2B2
1A4
V
CC
2O
E
1B1
2A4
1B2
2A3
1B3
2A2
(Top view)
2
3
4
5
6
7
8
20
19
18
17
16
15
14
2B1
GND
1B4
2A1
9
10
12
11
13
HD74CBT3244
Rev.0, Aug. 2001, page 3 of 9
Absolute Maximum Ratings
Item Symbol Ratings Unit Conditions
Supply voltage range VCC 0.5 to 7.0 V
Input voltage range *1 V
I 0.5 to 7.0 V
Input clamp current IIK 50 mA VI < 0
Continuous output current IO 128 mA VO = 0 to VCC
Continuous current through
VCC or GND
ICC or IGND ±100 mA
Maximum power dissipation
at Ta = 25°C (in still air) *2
PT 757 mW TSSOP
Storage temperature Tstg 65 to 150 °C
Notes: The absolute maximum ratings are values which must not individually be exceeded, and
furthermore, no two of which may be realized at the same time.
1. The input and output voltage ratings may be exceeded even if the input and output clamp-current
ratings are observed.
2. The maximum package power dissipation was calculated using a junction temperature of 150°C.
Recommended Operating Conditions
Item Symbol Min Max Unit Conditions
Supply voltage range VCC 4.5 5.5 V
Input voltage range VI 0 5.5 V
Output voltage range VI/O 0 5.5 V
Input transition rise or fall rate t / v 0 5 ns / V VCC = 4.5 to 5.5 V
Operating free-air temperature Ta 40 85 °C
Note: Unused or floating inputs must be held high or low.
HD74CBT3244
Rev.0, Aug. 2001, page 4 of 9
Block Diagram
1B11A1
218
1B41A4
812
1
1OE
2B12A1
11 9
2B42A4
17 3
19
2OE
HD74CBT3244
Rev.0, Aug. 2001, page 5 of 9
DC Electrical Characteristics
(Ta = 40 to 85°C)
Item Symbol VCC (V) Min Typ *1 Max Unit Test conditions
Clamp diode voltage VIK 4.5 1.2 V IIN = 18 mA
Input voltage VIH 4.5 to 5.5 2.0 V
V
IL 4.5 to 5.5 0.8
On-state switch
resistance *2
RON 4.5 5 7 VIN = 0 V,
IIN = 64 mA
4.5 5 7 VIN = 0 V,
IIN = 30 mA
4.5 10 15 VIN = 2.4 V,
IIN = 15 mA
Input current IIN 0 to 5.5 ±1.0 µA VIN = 5.5 V or GND
Off-state leakage
current
IOZ 5.5 ±1.0 µA 0 A, B VCC
Quiescent supply
current
ICC 5.5 3 µA VIN = VCC or GND,
IO = 0 mA
Increase in ICC
per input *3
ICC 5.5 2.5 mA One input at 3.4 V,
other inputs at VCC or
GND
Notes: For condition shown as Min or Max use the appropriate values under recommended operating
conditions.
1. All typical values are at VCC = 5 V (unless otherwise noted), Ta = 25°C.
2. Measured by the voltage drop between the A and B terminals at the indicated current through the
switch. On-state resistance is determined by the lower voltage of the two (A or B) terminals.
3. This is the increase in supply current for each input that is at the specified TTL voltage level
rather than VCC or GND.
Capacitance
(Ta = 25°C)
Item Symbol VCC (V) Min Typ Max Unit Test conditions
Control input
capacitance
CIN 5.0 3.5 pF VIN = 0 or 3 V
Input / output
capacitance
CI/O (OFF) 5.0 5 pF VO = 0 or 3 V
OE = VCC
Note: This parameter is determined by device characterization is not production tested.
HD74CBT3244
Rev.0, Aug. 2001, page 6 of 9
Switching Characteristics
(Ta = 40 to 85°C)
VCC = 5.0±0.5 V
Item
Symbol
Min
Max
Unit
Test
conditions
FROM
(Input)
TO
(Output)
Propagation delay
time *1
tPLH
tPHL
0.25 ns CL = 50 pF
RL = 500
A or B B or A
Enable time tZH
tZL
1.0 8.9 ns CL = 50 pF
RL = 500
OE A or B
Disable time tHZ
tLZ
1.0 7.4 ns CL = 50 pF
RL = 500
OE A or B
Note: 1. The propagation delay is the calculated RC time constant of the typical on-state resistance of the
switch and the specified load capacitance, when driven by an ideal voltage source (zero output
impedance).
Test Circuit
OPEN
S1
CL = 50 pF
*1
500
Load circuit for outputs
Symbol
t / t
PLH PHL
t / t
ZH HZ
t / t
ZL LZ
S1
OPEN
OPEN
7 V
500
See under table
GND
Note: 1. CL includes probe and jig capacitance.
HD74CBT3244
Rev.0, Aug. 2001, page 7 of 9
Waveforms – 1
Input
10 %
1.5 V 1.5 V
90 %
tr
90 % 3 V
GND
10 %
tf
Output 1.5 V 1.5 V
tPLH
V
tPHL
OH
VOL
Waveforms – 2
Waveform - B
Notes: 1. All input pulses are supplied by generators having the following characteristics :
PRR 10 MHz, ZO = 50 , tr 2.5 ns, tf 2.5 ns.
2. Waveform - A is for an output with internal conditions such that the output is low except
when disabled by the output control.
3. Waveform - B is for an output with internal conditions such that the output is high except
when disabled by the output control.
4. The output are measured one at a time with one transition per measurement.
Waveform - A
VOH
VOL
V + 0.3 V
OL
V - 0.3 V
OH
Output
Control 10 % 10 %
1.5 V 1.5 V
90 %
tf
90 % 3 V
3.5 V
GND
GND
tr
1.5 V
1.5 V
tHZ
tLZ
tZH
tZL
HD74CBT3244
Rev.0, Aug. 2001, page 8 of 9
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
TTP-20DA
0.07 g
*Dimension including the plating thickness
Base material dimension
0.50 ± 0.10
*0.17 ± 0.05
6.40 ± 0.20
0.10
1.10 Max
0.13 M
0.65
110
20 11
4.40
6.50
6.80 Max
*0.22 +0.08
0.07
0.07 +0.03
0.04
1.0
0.65 Max
0.20 ± 0.06
0.15 ± 0.04
As of January, 2001
Unit: mm
0° 8°
HD74CBT3244
Rev.0, Aug. 2001, page 9 of 9
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third partys rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachis sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor
products.
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: (03) 3270-2111 Fax: (03) 3270-5109
Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://semiconductor.hitachi.com.sg
URL http://www.hitachisemiconductor.com/
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road
Hung-Kuo Building
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://semiconductor.hitachi.com.hk
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straße 3
D-85622 Feldkirchen
Postfach 201, D-85619 Feldkirchen
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585200
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to:
Colophon 5.0