Silicon RF Power Semiconductors
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
RD100HHF1 17 Aug 2010
1/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
RD100HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
FEATURES
High power and High Gain:
Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
RoHS COMPLIANT
RD100HHF1-101is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 50 V
VGSS Gate to source voltage Vds=0V +/-20 V
Pch Channel dissipation Tc=25°C 176.5 W
Pin Input power Zg=Zl=50Ω 12.5
W
ID Drain current - 25 A
Tch Channel temperature - 175 °C
Tstg Storage temperature - -40 to +175 °C
Rth j-c Thermal resistance junction to case 0.85 °C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25
°C UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER CONDITIONS MIN TYP MAX.
IDSS Zerogate voltage drain current VDS=17V, VGS=0V - - 10 uA
IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA
VTH Gate threshold voltage VDS=12V, IDS=1mA 1.5 - 4.5 V
Pout Output power f=30MHz ,VDD=12.5V 100 110 - W
ηD Drain efficiency Pin=7W, Idq=1.0A 55 60 - %
Load VSWR tolerance VDD=15.2V,Po=100W(Pin
Control)
f=30MHz,Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy -
Note : Above parameters , ratings , limits and conditions are subject to change.
OUTLINE DRAWING
9.6+/-0.3
3.3+/-0.2
4-C2
10.0+/-0.3
R1.6+/-0.15
24.0+/-0.6
18.5+/-0.3
5.0+/-0.3
3
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
2
4.5+/-0.7
6.2+/-0.7
0.1
+0.05
-0.01
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
Silicon RF Power Semiconductors
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
RD100HHF1 17 Aug 2010
2/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
AMBIENT TEMPE RATURE
0
40
80
120
160
200
0 40 80 120 160 200
A MBIENT TEMPERA TURE Ta( °C)
CHANNEL DISSIPATION Pch(W
)
...
Vds VS. Crss CHARACTERISTICS
0
10
20
30
40
0102030
Vds(V)
Crss(pF)
Ta=+25°C
f=1MHz
Vds VS. Coss CHARACTERISTICS
0
100
200
300
400
500
0 102030
Vds(V)
Coss(pF)
Ta=+25°C
f=1MHz
Vds VS. Ciss CHARACTERISTICS
0
50
100
150
200
250
300
0102030
Vds(V)
Ciss(pF)
Ta=+25°C
f=1MHz
Vds-Ids CHARACTERISTICS
0
2
4
6
8
10
0246810
Vds(V)
Ids(A)
Ta=+25°C
Vg s =5.7V
Vg s= 5.4V
Vg s =5.1V
Vg s= 4.8V
Vg s= 4.2V
Vgs=6V
Vg s= 4.5V
Vgs-Ids CHARACTERISTICS
0
2
4
6
8
10
01234567
Vgs(V)
Ids(A)
Ta=+25°C
Vds=10V
Silicon RF Power Semiconductors
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
RD100HHF1 17 Aug 2010
3/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERI STICS
0
10
20
30
40
50
0 10203040
Pin(dBm)
Po(dBm) , Gp(dB) ,
Idd(A)
0
20
40
60
80
100
ηd(%)
Ta=+25°C
f=30MHz
Vdd=12.5V
Idq=1A
Po
ηｄ
Ｉｄｄ
Gp
Pin-Po CHARACTERI STICS
0
20
40
60
80
100
120
0246810
Pin(W)
Pout(W) , Idd(A)
20
30
40
50
60
70
80
ηd(%)
Po
ηd
Idd
Ta=25°C
f=30MHz
Vdd=12.5V
Idq=1A
Vdd-Po CHARACTERISTICS
0
20
40
60
80
100
120
140
4 6 8 10 12 14
Vdd(V)
Po(W)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
Idd(A)
Po
Idd
Ta=25°C
f=30MHz
Pin=7W
Idq=1A
Zg=ZI=50 ohm
Vgs-Ids CHARACTERI STICS 2
0
2
4
6
8
10
01234567
Vgs(V)
Ids(A)
Vds=10V
Tc=-25~+75°C
-25°C
+75°C
+25°C
Silicon RF Power Semiconductors
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
RD100HHF1 17 Aug 2010
4/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TEST CIRCUIT(f=30MHz)
93
75
30
14
8
12
L4:1Turns,I.D10mm,D1.6mm silver plateted copper wire
53
50
100
1000pF
L4
200pF
180pF
4.7 OHM
L3
220pF
4.7K OHM
L3:5Turns,I.D6mm,D0.7mm copper wire P=1mm
L2:10Turns,I.D8mm,D1.6mm silver plateted copper wire
L2
L1
9.1K OHM
93
90
18
4.5
180/200pF
Dimensions:mm
Pin
Vdd
Vgg
L1:8Turns,I.D8mm,D1.6mm silver plateted copper wire
330uF,50V
C1
Pout
C1:100pF, 0.022uF, 0.1uF in parallel
Note:Board material-teflon substrate
micro strip line width=4.2mm / 50 OHM,er:2.7,t=1.6mm
21
24
43
19
220pF
82pF
C1
C1
10uF,50V
C1
56
100
20pF
20pF 82/82pF
82/330/82pF
82pF
1000pF
82/330/82pF
68
Silicon RF Power Semiconductors
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
RD100HHF1 17 Aug 2010
5/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
Zin , Zout
f Zin Zout
(MHz) (ohm) (ohm) Conditions
30 8.86-j14.31 0.64-j0.01 Po=115W, Vdd=12.5V,Pin=7W
f=30MHz Zout
f=30MHz Zin
Zo=10Ω
Silicon RF Power Semiconductors
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
RD100HHF1 17 Aug 2010
6/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD100HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA)
Freq.
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
10 0.835 -158.6 31.451 94.8 0.014 5.2 0.770 -162.1
30 0.839 -171.1 10.628 79.3 0.014 -9.9 0.764 -171.6
50 0.849 -172.9 6.212 71.0 0.012 -20.7 0.786 -171.4
100 0.886 -173.9 2.749 54.1 0.012 -34.1 0.842 -171.4
150 0.915 -175.1 1.541 40.2 0.009 -27.8 0.880 -173.6
200 0.932 -176.4 0.972 31.6 0.007 -36.9 0.908 -174.3
250 0.945 -177.3 0.671 24.5 0.006 -54.4 0.946 -176.2
300 0.951 -178.2 0.481 20.1 0.005 -30.4 0.941 -177.4
350 0.958 -179.3 0.365 15.2 0.003 13.1 0.952 -178.3
400 0.960 -179.8 0.291 13.4 0.003 -18.0 0.974 -179.8
450 0.964 179.5 0.243 8.5 0.004 45.3 0.963 179.6
500 0.966 178.7 0.195 6.8 0.003 42.3 0.971 178.6
550 0.970 178.2 0.154 5.2 0.004 78.6 0.975 177.5
600 0.967 177.5 0.133 4.8 0.005 80.1 0.965 176.8
650 0.971 177.0 0.119 1.0 0.003 72.0 0.972 176.0
700 0.970 176.5 0.109 -1.3 0.006 61.3 0.973 175.1
750 0.969 175.6 0.092 0.6 0.007 67.2 0.964 174.9
800 0.970 175.2 0.080 -4.0 0.005 82.2 0.974 173.9
850 0.976 174.5 0.073 -1.9 0.007 78.7 0.969 173.3
900 0.973 173.9 0.067 -5.4 0.008 69.9 0.973 172.6
950 0.973 173.2 0.058 4.1 0.008 86.8 0.973 171.5
1000 0.977 172.6 0.049 -8.7 0.011 78.7 0.971 171.7
S11 S21 S12 S22
Silicon RF Power Semiconductors
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
RD100HHF1 17 Aug 2010
7/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice tha
t
have a possibility to receive a burn to touch the operating product directly or touch the product until cold
after switch off. At the near the product,do not place the combustible material that have possibilities to aris
e
the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notic
e
that do not leakage the unnecessary electric wave and use this products without cause damage for human
and property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human
and electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal
specification sheets, please contact one of our sales offices.
2. RD series products (RF power transistors) are designed for consumer mobile communication terminals
and were not specifically designed for use in other applications. In particular, while these products ar
e
highly reliable for their designed purpose, they are not manufactured under a quality assurance testing
protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical
communications elements. Examples of critical communications elements would include transmitters fo
r
base station applications and fixed station applications that operate with long term continuous transmission
and a higher on-off frequency during transmitting, especially for systems that may have a high impact t
o
society.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefor
e
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed
(fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case o
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices,
the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin
due to extreme short current flow between the drain and the source of the device. These results causes in
fire or injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to th
e
supplementary items in the specification sheet.
8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified
in any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the las
t
page of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Silicon RF Power Semiconductors
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
RD100HHF1 17 Aug 2010
8/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire
or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against
any malfunction or mishap.
Keep safety first in your circuit designs !
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