
MMBTH10
NPN SURFACE MOUNT VHF/UHF TRANSISTOR
Features
• Designed for VHF/UHF Amplifier Applications and High
Output VHF Oscillators
• High Current Gain Bandwidth Product
• Ideal for Mixer and RF Amplifier Applications with
collector currents in the 100μA - 30 mA Range
• Lead Free/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High
Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking Information: K3H, K3Y; See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α 0° 8°
All Dimensions in mm
C
BE
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current - Continuous (Note 1) IC50 mA
Power Dissipation (Note 1) Pd300 mW
Thermal Resistance, Junction to Ambient (Note 1) RθJA 417 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage V(BR)CEO 25 ⎯ V IC = 1mA, IB = 0 B
Collector-Base Breakdown Voltage V(BR)CBO 30 ⎯ V IC = 100μA, IE = 0
Emitter-Base Breakdown Voltage V(BR)EBO 3.0 ⎯ V IE = 10μA, IC = 0
Collector Cutoff Current ICBO ⎯ 100 nA VCB = 25V, IE = 0
Emitter Cutoff Current IEBO ⎯ 100 nA VEB = 2V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE 60 ⎯ ⎯ IC = 4mA, VCE = 10.0V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.5 V IC = 4mA, IB = 400μA B
Base-Emitter On Voltage VBE(SAT) ⎯ 0.95 V IC = 4mA, VCE = 10.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product fT650 ⎯ MHz VCE = 10V, f = 100MHz, IC = 4mA
Collector-Base Capacitance CCB ⎯ 0.7 pF VCB = 10V, f = 1.0MHz, IE = 0
Collector-Base Feedback Capacitance CRB ⎯ 0.65 pF VCB = 10V, f = 1.0MHz, IE = 0
Collector-Base Time Constant Rb’Cc ⎯ 9 ps VCB = 10V, f = 31.8MHz, IC = 4mA
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
DS31031 Rev. 11 - 2 1 of 3
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