tm
©2006 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGH30N60LSD Rev. A2
FGH30N60LSD
July 2008
FGH30N60LSD
Features
• Low saturation voltage: VCE(sat) =1.1V @ IC = 30A
• High Input Impedance
• Low Conduction Loss
Applications
• Solar Inverters
• UPS, Welder
General Description
The FGH30N60LSD is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors.This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description FGH30N60LSD Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
ICCollector Current @ TC = 25°C60 A
Collector Current @ TC = 100°C30 A
ICM (1) Pulsed Collector Current 90 A
IFSM Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave 150 A
PDMaximum Power Dissipation @ TC = 25°C 480 W
Maximum Power Dissipation @ TC = 100°C 192 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 °C
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.26 °C/W
RθJC(Diode) Thermal Resistance, Junction-to-Case -- 0.92 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W
ECG
COLLECTOR
(FLANGE)
G
C
E
G
C
E
2www.fairchildsemi.com
FGH30N60LSD Rev. A2
FGH30N60LSD
Package Marking and Ordering Information
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Device Marking Device Package Packaging
Type Qty per Tube
Max Qty
per Box
FGH30N60LSD FGH30N60LSDTU TO-247 Tube 30ea -
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆BVCES/
∆TJ
Temperature Coefficient of Breakdown
Voltage VGE = 0V, IC = 250uA -- 0.6 -- V/°C
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ±250 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250uA, VCE = VGE 4.0 5.5 7.0 V
VCE(sat) Collector to Emitter
Saturation Voltage
IC = 30A, VGE = 15V -- 1.1 1.4 V
IC = 30A, VGE = 15V,
TC = 125°C-- 1.0 -- V
IC = 60 A, VGE = 15V -- 1.3 -- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
-- 3550 -- pF
Coes Output Capacitance -- 245 -- pF
Cres Reverse Transfer Capacitance -- 90 -- pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 400 V, IC = 30A,
RG = 6.8Ω, VGE = 15V,
Inductive Load, TC = 25°C
-- 18 -- ns
trRise Time -- 46 -- ns
td(off) Turn-Off Delay Time -- 250 -- ns
tfFall Time -- 1.3 2.0 us
Eon Turn-On Switching Loss -- 1.1 -- mJ
Eoff Turn-Off Switching Loss -- 21 -- mJ
td(on) Turn-On Delay Time
VCC = 400 V, IC = 30A,
RG =6.8Ω, VGE = 15V,
Inductive Load, TC = 125°C
-- 17 -- ns
trRise Time -- 45 -- ns
td(off) Turn-Off Delay Time -- 270 -- ns
tfFall Time -- 2.6 -- us
Eon Turn-On Switching Loss -- 1.1 -- mJ
Eoff Turn-Off Switching Loss -- 36 -- mJ
QgTotal Gate Charge VCE = 300 V, IC = 30A,
VGE = 15V
-- 225 -- nC
Qge Gate-Emitter Charge -- 30 -- nC
Qgc Gate-Collector Charge -- 105 -- nC
LeInternal Emitter Inductance Measured 5mm from PKG -- 7 -- nH
3www.fairchildsemi.com
FGH30N60LSD Rev. A2
FGH30N60LSD
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Parameter Conditions Min. Typ. Max Units
VFM IF = 15A
IF = 15A TC = 25 °C
TC = 125 °C-
-1.8
1.6 2.2
-V
V
IRM VR = 600V TC = 25 °C - - 100 µA
trr IF =1A, di/dt = 100A/µs, VCC = 30V
IF =15A, di/dt = 100A/µs, VCC = 390V TC = 25 °C
TC = 25 °C-
--
-35
40 ns
ns
ta
tb
Qrr
IF =15A, di/dt = 100A/µs, VCC = 390V TC = 25 °C
TC = 25 °C
TC = 25 °C
-
-
-
18
13
27.5
-
-
-
ns
ns
nC
4www.fairchildsemi.com
FGH30N60LSD Rev. A2
FGH30N60LSD
Typical Performance Characteristics
Figure 1.Typical Output Characteristics Fig ure 2. Ty pic al Sat uration Vo lt age
Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer characteristics
Cha r a c ter i t ics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. Vge
Temperature at Variant Current Level
01234
0
30
60
90 TC = 25oCVGE = 20V
1 5 V
1 2 V
1 0 V
8 V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V] 01234
0
30
60
90 TC = 125oCVGE = 20V
15 V
12 V
10 V
8V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
024681012
0
30
60
90 Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
Collector Current, IC [A]
Gate-Emitter Vo ltag e,V GE [V]
0123
0
30
60
90 Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
Collector Current, IC [A]
Colle cto r-E mitter Vo lta g e, V CE [V ]
25 50 75 100 125
0.6
0.8
1.0
1.2
1.4
60A
30A
IC = 15A
Common E m itter
VGE = 15V
Collector-Em itter Voltage, VCE [V]
Collector-EmitterCase Temperature, TC [oC]0 4 8 121620
0
4
8
12
16
20
IC = 15A
30A 60A
Common E m itter
TC = 25oC
Collector-Emitter Voltage, VCE [V]
Gate -Emitte r Voltage, VGE [V ]
5www.fairchildsemi.com
FGH30N60LSD Rev. A2
FGH30N60LSD
Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs. Vge Figure 8. Capacitance characteristics
Figure 9. Gate Charge Characteristics Figure 10. SOA Characteeristics
Figure 11. Load Current Vs. Frequency Figure 12. Turn-On Characteristics vs.
Gate Resistance
0 4 8 12 16 20
0
4
8
12
16
20
IC = 15A
30A 60A
Comm on Emitter
TC = 125oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, V GE [V] 0 5 10 15 20 25 30
100
1000
10000
13000
Comm on E m itter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
Coes
Cies
Capacitance [pF]
Colle cto r-E mitter Voltage , V CE [V ]
50
0 50 100 150 200 250
0
3
6
9
12
15 Comm on Em itter
IC = 30A
TC = 25oC
300V
200V
Vcc = 100V
Gate-Emitter Voltage, VGE [V]
Ga te Charge , Q g [n C ] 0.1 1 10 100 1000
0.1
1
10
100 50µs
100µs
DC Operation
1ms
Ic MAX (Continuous)
Ic MAX (Pulsed)
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
Collector Current, Ic [A]
Collector-Emitter Voltage, VCE [V]
300
0 1020304050
10
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
td(on)
tr
Switching Time [ns]
Gate Resistance, RG [Ω]
200
0.1 1 10 100 1000
0
10
20
30
40
50
60
70
80 Vcc = 400V
load Current : peak of square wave
Duty cycle : 50%
Tc = 100oC
Powe Dissipation = 192W
Load Current [A]
Frequency [kHz]
6www.fairchildsemi.com
FGH30N60LSD Rev. A2
FGH30N60LSD
Typical Performance Characteristics (Continued)
Figure 13. Turn-Off Characteristics vs. Figure 14. Turn-On Characteristics vs.
Gate Resistance Collector Current
Figure 15. Turn-Off Characteristics v s. Figure 16. Switching Los s v s
Collector Current Gate Resistance
Figure 17.Switching Loss vs Collec tor Current Figure 18. Turn-Off Switching
SOA Characteristics
0 1020304050
100
1000
Common Emitter
VCC = 40 0V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
td(off)
tf
Switching Time [ns]
Gate Resistance, RG [Ω]
3000
20 30 40 50 60 70 80
10
100
Comm on Em itter
VGE = 15V, RG = 6.8Ω
TC = 25oC
TC = 125oC
tr
td(on)
Switching Time [ns]
Collector Current, IC [A]
500
20 30 40 50 60 70 80
100
1000 Common Emitter
VGE = 15V, RG = 6.8Ω
TC = 25oC
TC = 125oC
td(off)
tf
Switching Time [ns]
Co lle ctor Cur re nt, IC [A]
6000
5 101520253035404550
1
10
100
Comm on Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
Eon
Eoff
Switching Loss [mJ]
Gate Resistance, RG [Ω]
500
10 20 30 40 50 60 70 80
0.1
1
10
100
Common Emitter
VGE = 15V, RG = 6.8Ω
TC = 25oC
TC = 125oC
Eon
Eoff
Switching Loss [mJ]
Collector Current, IC [A] 1 10 100 1000
1
10
100
Safe Operating Area
VGE = 15V, TC = 125oC
Collector Curren t, I C [A]
Collecto r-Em itter Voltag e, VCE [V ]
200
7www.fairchildsemi.com
FGH30N60LSD Rev. A2
FGH30N60LSD
Figure 19. Transient Thermal Impedance of IGBT
Figure 20. Typical Forward Voltage Drop Figure 21. Typical Reverse Current
Figure 22. Typical Reverse Recovery Time
1E-5 1E-4 1E-3 0.01 0.1 1 10
1E-3
0.01
0.1
1
0.5
0.2
0.1
0.05
0.02
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty F actor, D = t1/t2
Peak Tj = Pdm x Z thjc + TC
0.01 t1
PDM
t2
0 100 200 300 400 500 600
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
TC = 25oC
TC = 75oC
REVERSE CURRENT, IR [A]
REVERSE VOLTAG E, VR [V]
TC = 125oC
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
0.1
1
10
100
TC=75oC
TC=25oC
FPRWARD CURRENT, IF [A]
FORWA RD VOLTA GE, VF [V]
TC=125oC
100 200 300 400 500
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
TC = 125oC
TC = 75oC
REVERSE RECOVERY TIME, trr [ns]
di/dt [A/µs]
TC = 25oC
IF = 15 A
8www.fairchildsemi.com
FGH30N60LSD Rev. A2
FGH30N60LSD
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
9www.fairchildsemi.com
FGH30N60LSD Rev. A2
FGH30N60LSD
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOE S IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS
OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY
THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for sur gical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to affect
its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FAST®
FASTr™
FPS™
FRFET™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
ScalarPump™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UniFET™
UltraFET®
VCX™
Wire™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
