be pe ff asu2724 0036470 0 t TEXAS INSTR LOPTOF 8961726 TEXAS INSTR COPTO) 62C 36870 OD | ee te . TIP100, TIP101, TiP102 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS JANUARY 1977 REVISED OCTOBER 1984 A Designed for Complementary Use with TIP105, TIP106, TIP107 7-33-29 @ 80 W at 25C Case Temperature . , 8A Continuous Collector Current @ Min hee of 200 at4V,8A @ MAXICEO of 50pA @ MAX VcE(sat) of 2.5 Vatic = 8A @ Reverse Energy Rating... 10 mJ e Designed for Ignition Systems, Motor Control, and Solenoid Driver Applications @ Designed to Replace: 2N6045 Series 2N6388 Series MJE6045 Series SE9302 Series device schematic + \ TO-220AB PACKAGE 4 { EMITTER | COLLECTOR l- BASE { - { i { 1 1 a THE COLLECTOR IS IN ELECTRICAL : CONTACT WITH THE MOUNTING TAB absolute maximum ratings at 25C case temperature (unless otherwise noted) TIP100 TIP101 TIP102 current current current areas at case temperature o 2 > o a Qo. = Continuous device dissipation at'{or below} 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free-air temperature (see Note 3) storage temperature range mm (0,1 from case NOTES: 1. This value applies forty, < 0.3 ms, duty cycle < 10 %. 2. Derate linearly to 150C case temperature at the rate of 0.64 C/W or refer to Dissipation Derating Curve, Figure 9. 3. Derate linearly to 150C free-air temperature at the rate of 16 C/mW or refer to Dissipation Derating Curve, Figure 10. , : fi TEXAS ap INSTRUMENTS POST OFFICE BOX 226012 @ DALLAS, TEXAS 75265 5-129TEXAS INSTR {OPTO4 b2 dePesei72b oosna71 1 8961726 TEXAS INSTR COPTO) 62c 36871 2 ! TIP100, TIP101, TIP102 . T-33-29 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER TEST CONDITIONS TIP10% See Note 4 V(BR)CEO Iceo IcBo EB = . CE = ' = oO 11000 h See Notes 4 and 5 20 000 20000 |1 - FE CE = 4V, . 500 See Notes 4 and 5 ce = 4V, See Notes 4 and 5 . See Notes 4 and 5 See Notes 4 and 5 VBE VCEisat) 2.5 2.5 VF See Notes 4 and 5 2.8 2.8 _ NOTES: 4. These parameters must be measured using pulse techniques, ty, = 300 ys, duty cycle < 2%, 5. These parameters are measured with voltage-sensing contacts separate fram the current-carrying contacts and located within 3,2 mm (0.125 inch] from the device body. . | thermal characteristics PARAMETER - : MIN TYP MAX | UNIT CAV NOTE 6: This parameter is measured using a 0,08 mm (0.003 inch} mica insulator with Dow-Corning 11 compound or both sides of the = insulator, a 0.138-32 (formerly 6-32) mounting screw with bushing, and a mounting torque of 0,9 newton-mater (8 inch-pounds). Uv resistive-load switching characteristics at 25C case temperature oO PARAMETER TEST CONDITIONST MIN TYP MAX | UNIT i @ ta 0.035 ao tr Ic = 8A, ig1 = 80mA, [pa = 80mA, . 0.35 ; @ ts Veeioff) = 5V, AL = 59, SeeFigue1 7.8 # tt . 2.45 I - t Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. : functional tests at 25C free-air temperature TEST CONDITIONS LEVEL i Power (Vce * Ic} Voce = 40V, Io = 2A, trest = 0.158 80W { Ic2b lem = 1A, L=20mH, t= 10Hz, | Ri Pulse E (S) everse Pulse Energy 3 trest = 0.55, See Figure 2 10mJ 5-130 I Te . INSTRUMENTS : POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 - . |TEXAS INSTR LO0PTO} be ve ff asu1n224 goO3ba?e 3 f 62C 36872 OD | TIP100, TIP101, TIP102 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS ( 8961726 TEXAS INSTR COPTO) & AON i . | os PARAMETER MEASUREMENT INFORMATION { T+33 -29 I INPUT : MONITOR . QUTPUT ' MONITOR Rap = 100 0 : 562 i 1NS914 14N914 = 1N914 t4 | |i yb j 270 pF , san Rep2 = 66 2 RL A582 ' Vi gen - I = Ven2"5V - | | : ; | Vepi ~ 20V + veces aov : ADJUST FOR al | [ Von=1evat AR 4 . ; INPUT MONITOR . ps - . TEST CIRCUIT Von =18V INPUT MONITOR . v -5V OUTPUT MONITOR nv VOLTAGE WAVEFORMS oO > NOTES: A. Vgenis a 30-V pulse into a 50 @ termination. - B. The Vgen waveform is supplied by a generator with the following characteristics: t, < 15 ns, ty < 15ns, Zour = 502, a tw = 20us, duty cycle< 2%. oa C. Waveforms are monitored on an oscilloscope with the following characteristics: tp < 15ns, Rin = 10 MQ, Cin < 11.5 pF. -_ D. Resistors must be noninductive types. - E. The d-c power supplies may require additional bypassing in order to minimize ringing. it . FIGURE 1. RESISTIVE-LOAD SWITCHING F - ; t , 4 . . TEXAS 5-131 INSTRUMENTS POST OFFICE 80X 225012 DALLAS, TEXAS 75265 7 =TEXAS INSTR {OPTO} b2 pe asci726 ooanaza s 8561726 TEXAS INSTR COPTOD 62C 36873 ! TIP100, TIP101, TIP102 T-33-29 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS FUNCTIONAL TEST INFORMATION EOD Vog MONITOR I pocccsccccr i Reet ' | 20 mH 2N6127 1 . | 1 INPUT i w i ' te (= Veco =20V Laban iT- aoe eee oe -= Ig MONITOR > Vep2=90 BB2 = Veei~10V erone + TEST CIRCUIT ty 1 ms ~~ t4 (Sees Note A) 0 INPUT VOLTAGE. 1A COLLECTOR CURRENT 0 VIBRICER a a] COLLECTOR VOLTAGE 9 20V s. VeEtsatl =< O VOLTAGE AND CURRENT WAVEFORMS wn NOTE A: Input pulse duration is increased until Icy = 14. FIGURE 2. REVERSE PULSE ENERGY TEST ay 5-132 TEXAS INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 rTEXAS INSTR {LOPTO} 1 om be pe ff asei726 QOOSb8?74 7% T . ~& Aa | g961726 TEXAS INSTR COPTO) s TYPICAL CHARACTERISTICS STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT 62C 36874 OD | TIP100, TIP101, TIP102 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS T-33-29 STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT 40k 40k 2 Vee =2V 2 VcE=4V ec See Notes 4 and 5 & See Notes 4 and 5 = 5 B 10k 2 10k i & a - - 5 4k 5 4k 6 3 2 z z Tk = 1k i 2 2 400 : 400 ! rs 100 = 100 1 0 2 4 6 8 10 12 0 2 4 6 8 10 12 i . fcCollector CurrentA ICollector CurrentA FIGURE 3 FIGURE 4 COLLECTOR-EMITTER - I SATURATION VOLTAGE BASE-EMITTER VOLTAGE vs VS > COLLECTOR CURRENT COLLECTOR CURRENT 417 i m 16 ie = 100 te = 100 2 15} See 4 > Sea Notes 4 14 2 S : - i 213 | B12 > 4 Qo ! 5 s Tg2=-35C S 3 11 g 410 a a | $ 09 a a. | 5 08 w cC=25 - | 7 07 > Bos Te = 128C To = 125C : $05 1.0 : 0 2 4 6 8 10 12 0 2 4 6 8 10 12 tgCollector CurrentA (Collector CurrentA FIGURE 5 FIGURE 6 NOTES: 4. These parameters must be measured using pulse techniques, tw = 300 ps, duty cycle < 2%. 5. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts located within ~ 3,2 mm (0.125 inch) from the device body. i fad we TEXAS 5-133 INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 i =TEXAS INSTR {LO0PTO} be vel A%dbi7eb Opabar7s 41 I i 1 _ 6961726 TEXAS INSTR OPTO? a ' 62C 36875 D } TIP100, TIP101, TIP102 , T-33-29 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS coe i er . . MAXIMUM SAFE OPERATING AREA MAXIMUM COLLECTOR CURRENT MAXIMUM COLLECTOR CURRENT . : VS . vs i - COLLECTOR-EMITTER VOLTAGE UNCLAMPED INDUCTIVE LOAD Te < 25C 00 Vec =20V Rep2 = 100 2 =0.1 i 0 Tex 28C t =4 , See Figure 2 = =5 8 10 5 i S Ss 4 3 5 E 1 ; - 2 3 ' Fa 2 4. 4 10 40 100 400 *-bo1 0.0401 O04 1 4 10 40 100 VoECollector-Emitter VoitageV LUnclamped Inductive LoadmH _ FIGURE 7 FIGURE 8 NOTE 7: Above this point the safe operating area has not been defined. THERMAL INFORMATION CASE TEMPERATURE FREE-AIR TEMPERATURE DISSIPATION DERATING CURVE DISSIPATION DERATING CURVE = 100 % 25 & 90 5 2 # 60 2 20 = a 2 5 g 70 a % 60 Rogc <1.56C/W & oO 5 & 1.5 S gs Z 5 = E 5 40 = 10 = 30 8 i : ! E 20 = O05 . = 10 = | < 0 0 : 0 2 50 75 100 125 = 150 0 2 50 75 100 125 150 TcCase TemperatureC TaFree-Air Temperature~C FIGURE 9 . FIGURE 10 : 5-134 TEXAS INSTRUMENTS . POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 = re ee EEE CEE oe oe