SPS01N60C3 Cool MOSTM Power Transistor Feature VDS @ Tjmax 650 V RDS(on) 6 ID 0.8 A * New revolutionary high voltage technology * Ultra low gate charge PG-TO251-3-11 * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance Type SPS01N60C3 Package Ordering Code PG-TO251-3-11 - Marking 01N60C3 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 C 0.8 TC = 100 C 0.5 Pulsed drain current, tp limited by Tjmax I D puls 1.6 Avalanche energy, single pulse EAS 20 mJ I D = 0.6 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.01 I D = 0.8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS 0.8 A 20 V Gate source voltage AC (f >1Hz) VGS 30 Power dissipation, T C = 25C Ptot 11 W Operating and storage temperature T j , T stg -55... +150 C Reverse diode dv/dt 3) dv/dt Rev. 2.1 Page 1 15 V/ns 2008-04-07 SPS01N60C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 480 V, I D = 0.8 A, Tj = 125 C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 11 Thermal resistance, junction - ambient, leaded RthJA - - 75 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm 2 cooling area 2) - - 50 - - 260 Soldering temperature, wavesoldering Tsold K/W C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=0.8A Values Unit min. typ. max. 600 - - - 700 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=250, VGS=V DS Zero gate voltage drain current I DSS V DS=600V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Rev. 2.1 A Tj=25C, - 0.1 1 Tj=150C - - 50 V GS=30V, VDS=0V - - 100 V GS=10V, ID=0.5A, Tj=25C - 5.6 6 Tj=150C - 15.1 - Page 2 nA 2008-04-07 SPS01N60C3 Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Symbol g fs Conditions V DS2*I D*RDS(on)max, Values Unit min. typ. max. - 0.75 - S pF ID=0.5A Input capacitance Ciss V GS=0V, V DS=25V, - 100 - Output capacitance Coss f=1MHz - 40 - Reverse transfer capacitance Crss - 2.5 - Turn-on delay time td(on) V DD=350V, V GS=0/10V, - 30 - Rise time tr ID=0.8A, RG=100 - 25 - Turn-off delay time td(off) - 55 82 Fall time tf - 30 45 - 0.9 - - 2.2 - - 3.9 5 - 5.5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg V DD=350V, ID=0.8A V DD=350V, ID=0.8A, nC V GS=0 to 10V Gate plateau voltage V(plateau) V DD=350V, ID=0.8A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 3I <=I , di/dt<=400A/us, V SD D DClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. Rev. 2.1 Page 3 2008-04-07 SPS01N60C3 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Inverse diode continuous IS Conditions TC=25C Values Unit min. typ. max. - - 0.8 - - 1.6 A forward current Inverse diode direct current, I SM pulsed Inverse diode forward voltage VSD VGS =0V, I F=IS - 1 1.2 V Reverse recovery time t rr VR =350V, IF=IS , - 570 970 ns Reverse recovery charge Q rr diF/dt=100A/s - 0.75 - C Typical Transient Thermal Characteristics Value Symbol Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance Rth1 0.225 Rth2 Cth1 0.00001221 0.395 Cth2 0.00005037 Rth3 0.603 Cth3 0.0000809 Rth4 0.995 Cth4 0.0002915 Rth5 0.691 Cth5 0.001844 Rth6 0.148 Cth6 0.412 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.1 Page 4 2008-04-07 SPS01N60C3 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25C 10 1 12 W A 10 9 10 0 ID Ptot 8 7 6 5 10 -1 4 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 3 2 1 0 0 20 40 60 80 100 120 C 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25C parameter: D = tp/T parameter: tp = 10 s, VGS 10 2 2.5 20V 10V K/W A 10 7V 1 ID ZthJC 6.5V 1.5 10 0 10 -1 6V 1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 5.5V 0.5 5V 0 0 1 s 10 tp Rev. 2.1 5 10 15 V 25 VDS Page 5 2008-04-07 3 SPS01N60C3 5 Drain-source on-state resistance 6 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter : ID = 0.5 A, VGS = 10 V parameter: tp = 10 s 2.5 34 A 24 ID RDS(on) 28 20 1.5 16 1 12 98% 8 0.5 typ 4 0 -60 -20 20 60 C 100 0 0 180 4 8 12 VGS Tj 20 V 7 Typ. gate charge 8 Forward characteristics of body diode VGS = f (QGate ) IF = f (VSD) parameter: ID = 0.8 A pulsed parameter: Tj , tp = 10 s 10 1 16 V A 10 0 0.2 VDS max 10 IF VGS 12 0.8 VDS max 8 6 10 -1 Tj = 25 C typ 4 Tj = 150 C typ Tj = 25 C (98%) 2 0 0 Tj = 150 C (98%) 1 2 3 4 nC 10 -2 0 5.5 QGate Rev. 2.1 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2008-04-07 SPS01N60C3 9 Avalanche SOA 10 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj 150 C par.: ID = 0.6 A, V DD = 50 V 0.9 22 mJ A 18 Tj(START) =25C 16 EAS IAR 0.7 0.6 0.5 0.4 14 12 10 Tj(START) =125C 8 0.3 6 0.2 4 0.1 0 -3 10 2 10 -2 10 -1 10 0 10 1 10 2 s 10 tAR 0 25 4 50 75 100 11 Drain-source breakdown voltage 12 Typ. capacitances V(BR)DSS = f (Tj) C = f (VDS) 125 150 200 C Tj parameter: V GS=0V, f=1 MHz 10 3 720 pF 680 Ciss 10 660 2 C V(BR)DSS V 640 620 Coss 10 1 600 580 Crss 560 540 -60 -20 20 60 100 C 10 0 0 180 Tj Rev. 2.1 Page 7 10 20 30 40 50 60 70 80 V 100 VDS 2008-04-07 SPS01N60C3 Definition of diodes switching characteristics Rev. 2.1 Page 8 2008-04-07 SPS01N60C3 PG-TO-251-3-11 Rev. 2.1 Page 9 2008-04-07 Rev. 2.1 Page 10 2008-04-07