e
1
Typical Output Power vs. Input Pow er
0
5
10
15
20
25
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Input Power (Watts)
Output Power (Watts)
VCC = 26 V
ICQ = 100 mA
f = 1.9 GHz
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 20 Vdc
Collector-Base Voltage (emitter open) VCBO 50 Vdc
Emitter-Base Voltage (collector open) VEBO 4.0 Vdc
Collector Current (continuous) IC2.8 Adc
Total Device Dissipation at Tflange = 25°C PD60 Watts
Above 25°C derate by 0.34 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (Tflange = 70°C) RθJC 2.90 °C/W
PTB 20191
12 Watts, 1.78–1.92 GHz
RF Power Transistor
Description
The 20191 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12
watts (CW) minimum output power, or 15 watts (PEP) output power.
Ion implantation, nitride surface passivation and gold metallization
are used to ensure excellent device reliability. 100% lot traceability is
standard.
Class AB Characteristics
26 Volt, 1.9 GHz Characterization
- Output Power = 12 W(CW), 15 W(PEP)
Internal Input Matching
Gold Metallization
Silicon Nitride Passivated
Package 20226
20191
LOT CODE
9/28/98
PTB 20191
2
e
Z Source Z Load
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 5 mA, RBE = 27 ΩV(BR)CER 50 — — Volts
Breakdown Voltage C to B IC = 5 mA V(BR)CBO 50 — — Volts
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4 — — Volts
DC Current Gain VCE = 5 V, IC = 200 mA hFE 20 — 100 —
Output Capacitance VCB = 26 V, IE = 0 A, f = 1 MHx Cob —7—pF
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(VCC = 26 Vdc, Pout = 12 W, ICQ = 100 mA, f = 1.9 GHz) Gpe 8.0 10.0 — dB
Output Power at 1 dB Compression
(VCC = 26 Vdc, ICQ = 100 mA, f = 1.9 GHz) P-1dB 10 12 — Watts
Collector Efficiency
(VCC = 26 Vdc, Pout = 12 W, ICQ = 100 mA, f = 1.9 GHz) ηC35 40 — %
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 15 W(PEP), ICQ = 100 mA, IMD -30 -32 — dBc
f1 = 1.899 GHz, f2 = 1.901 GHz)
Load Mismatch Tolerance
(VCC = 26 Vdc, Pout = 12 W, ICQ = 100 mA, Ψ— — 5:1 —
f = 1.9 GHz—all phase angles at frequency of test)
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 26 Vdc, Pout = 12 W, ICQ = 100 mA)
Frequency Z Source Z Load
GHz R jX R jX
1.80 10.0 -4.2 2.6 0.9
1.85 9.1 -3.1 2.2 1.2
1.90 8.1 -2.0 1.6 1.4 Z0 = 50 Ω
5
/19/98
PTB 20191
3
e
Gain vs. Frequency
(as measured in a broadband c ircuit)
2
4
6
8
10
12
14
1.75 1.8 1.85 1.9 1.95
Frequency (GHz)
Gain (dB)
VCC = 26 V
ICQ = 100 mA
Pout = 12 W
Efficiency vs. O utput Power
0
10
20
30
40
50
60
048121620
Output Power (Watts )
Efficiency (%)
VCC = 26 V
ICQ = 100 mA
f = 1.9 GHz
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20191 Uen Rev. C 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
