IPP50R350CP
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant; Halogen free for mold compound
• Qualified for industrial grade applications according to JEDEC1)
CoolMOS CP is designed for:
• Hard- & soft switching SMPS topologies
• CCM PFC for Lamp Ballast, LCD & PDP TV
• PWM for Lamp Ballast, LCD & PDP TV
VDS @Tjmax 550 V
RDS(on),max 0.350 W
Qg,typ 19 nC
Product Summary
Type Package Marking
IPP50R350CP PG-TO220 5R350P
PG-TO220
Rev. 2.1 page 1 2012-05-08
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C A
TC=100 °C
Pulsed drain current2) ID,pulse TC=25 °C
Avalanche energy, single pulse EAS ID=3.7 A, VDD=50 V 246 mJ
Avalanche energy, repetitive tAR2),3) EAR ID=3.7 A, VDD=50 V
Avalanche current, repetitive tAR2),3) IAR A
MOSFET dv/dtruggedness dv/dtVDS=0...400 V V/ns
Gate source voltage VGS static V
AC (f>1 Hz)
Power dissipation Ptot TC=25 °C W
Operating and storage temperature Tj,Tstg °C
Mounting torque M3 and M3.5 screws 60 Ncm
89
-55 ... 150
0.37
3.7
50
±20
Value
10
6
22
±30
Type Package Marking
IPP50R350CP PG-TO220 5R350P
Rev. 2.1 page 1 2012-05-08