rrO ReMOS [FE = cc Cc FIELD EFFECT POWER TRANSISTOR ] IRF340,341 D86EQ2,Q1 10 AMPERES 400, 350 VOLTS | ROS(ON) = 0.55 9 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Features @ Polysilicon gate Improved stability and reliability No secondary breakdown Excellent ruggedness Ultra-fast switching Independent of temperature Voltage controlled High transconductance N-CHANNEL OY CASE STYLE TO & -204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.845(21.47) le MAX. 68 oF DIA. a on alle 1.050(26.68) MAX."* 9.043( 1.09) 0.038(0.97) 4 m=F- SEATING PLANE r~ .358(9.09) MAX he .426(10.82} MIN. 0.675(17.15, 0.650(16.51) CAST TEMP. REFERENCE POINT 1. en 30.40) p 177(29.90) | e Low input capacitance Reduced drive requirement 2015.0) ~ | eax e Excellent thermal stability Ease of paralleling DRAIN [| 9225(6.72)~ DRAIN 0.162(4.09) DIA. 0.208(5.27) (CASE) 0.15(3.84} 2HOLES 0.440(14.18) 0.420(10.67) maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF340/D86EQ2 IRF341/D86EQ1 UNITS Drain-Source Voltage Voss 400 350 Voits Drain-Gate Voltage, Ras = IMO VparR 400 350 Volts Continuous Drain Current @ Tc = 25C Ip 10 10 A @ To = 100C 6 6 A Pulsed Drain Current lpm 40 40 A Gate-Source Voltage Vas +20 +20 - Volts Total Power Dissipation @ To = 25C Pp 125 125 Watts Derate Above 25C 1.0 1.0 W/C Operating and Storage Junction Temperature Range Ty, TSTG -55 to 150 ~55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rgic 1.00 1.00 C/W Thermal Resistance, Junction to Ambient Rega 30 30 C/W Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 153 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF340/D86EQ2 | BVpss 400 Volts (Vas = OV, Ip = 250 WA) IRF341/D86EQ1 350 _ _ Zero Gate Voltage Drain Current loss (Vos = Max Rating, Vag = OV, To = 25C) _ _ 250 pA (Vps = Max Rating, x 0.8, Vag = OV, To = 125C) _ _ 1000 tiene hy tale Current lass _ _ +100 nA on characteristics Gate Threshold Voltage To = 25C | Vasc(TH) 2.0 _ 4.0 Volts (Vos = Vas; Ip = 250 vA) On-State Drain Current | 10 _. _ A (Vag = 10V, Vpg = 10V) D(ON) Static Drain-Source On-State Resistance (Vag = 10V, Ip = 5A) Rps(On) _ 0.48 0.55 Ohms Forward Transconductance (Vpg = 10V. Ip = 5A) Ofs 3.2 4.5 _ mhos dynamic characteristics Input Capacitance Ves = OV Ciss _ 1400 1600 pF Output Capacitance Vos = 25V Coss _ 210 450 pF Reverse Transfer Capacitance f=1MbHz Crss _ 37 150 pF switching characteristics* Turn-on Delay Time Vos = 175V ta(on) _ 20 ns Rise Time Ip = 5A, Vag = 15V tr _ 20 _ ns Turn-off Delay Time RGEN = 500, Res = 12.50 | ta(oft) _ 70 _ ns Fall Time (Res (Equiv.) = 100) tf _ 30 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 10 A Pulsed Source Current Ism _ _ 40 A Diode Forward Voltage _ 0 (To = 28C, Vgg = OV, Ig = 10A) Vsb 8 2.0 Volts Reverse Recovery Time ter _ 420 _ ns (Ig = 10A, dig/dt = 100A/usec, To = 125C) Qrar 5.5 _ pc *Pulse Test: Pulse width = 300 ys, duty cycle = 2% 100 80 60 40 = 20 8 g 8 al B10 < 2 6 3 e z 4 = a a 8 5 2 > S o 2 2 <~ 10 <q & 0.8-- OPERATION IN THIS AREA Zz S a 0.6 F MAY BE LIMITED BY Rogon) z 04 0.2 | SINGLE PULSE IRF341/D86EQ1 To = 26C 1 2 4 6 8 10 20 40 6080100 200 400 600 1000 Vpg, ORAINSOURCE VOLTAGE (VOLTS) CONDITIONS: Rpsion) CONDITIONS: Ip = 5.0A, Vgg=10V R VesiTHy CONDITIONS: Ip = 25044, Vg = Vag Dston) VesitH) 40 0 40 80 120 160 T,, JUNCTION TEMPERATURE (C) MAXIMUM SAFE OPERATING AREA TYPICAL NORMALIZED Rosion, AND Vasiry) VS. TEMP. 154