2N7000 2N7000 N-Channel Enhancement Mode Field Effect Transistor N-Kanal Feldeffekt Transistor - Anreicherungstyp N N Version 2011-02-16 Power dissipation Verlustleistung 18 9 16 S GD 2 x 2.54 Dimensions - Mae [mm] 350 mW Plastic case Kunststoffgehause TO-92 (10D3) Weight approx. Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) 2N7000 Drain-Source-voltage - Drain-Source-Spannung VDSS 60 V Drain-Gate-voltage - Drain-Gate-Spannung RGS 1 M VDGR 60 V Gate-Source-voltage - Gate-Source-Spannung dc tp < 50 s VGSS VGSS 20 V 40 V Power dissipation - Verlustleistung Ptot 350 mW Drain current continuos - Drainstrom (dc) Peak Drain current - Drain-Spitzenstrom ID IDM 200 mA 500 mA Operating Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS 150C -55...+150C (c) Diotec Semiconductor AG http://www.diotec.com/ 1 2N7000 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. Drain-Source breakdown voltage - Drain-Source Durchbruchspannung ID = 10 A V(BR)DSS Drain-Source leakage current - Drain-Source Leckstrom 60 V G short VDS = 48 V VDS = 48 V, Tj = 125C IDSS IDSS 1 A 1 mA IGSS 10 nA Gate-Body leakage current - Gate-Substrat Leckstrom VGS = 15 V Gate-Threshold voltage - Gate-Source Schwellspannung VGS = VDS, ID = 1 mA VGS(th) 0.8 V 3V Drain-Source on-voltage - Drain-Source-Spannung VGS = 10 V, ID = 500 mA VGS = 4.5 V, ID = 75 mA VDS(on) 2.5 V 0.45 V Drain-Source on-state resistance - Drain-Source Einschaltwiderstand VGS = 10 V, ID = 500 mA VGS = 4.5 V, ID = 75 mA RDS(on) RDS(on) Forward Transconductance - Ubertragungssteilheit VDS = 10 V, ID = 200 mA gFS 5 6 100 mS Input Capacitance - Eingangskapazitat VDS = 25 V, f = 1 MHz Ciss 60 pF Coss 25 pF Crss 5 pF ton 10 ns VDD= 15 V, RL= 30 , ID= 0.5 A, VGS= 10 V, RG= 25 toff 10 ns Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft RthA < 357 K/W 1) Output Capacitance - Ausgangskapazitat VDS = 25 V, f = 1 MHz Reverse Transfer Capacitance - Ruckwirkungskapazitat VDS = 25 V, f = 1 MHz Turn-On Delay Time - Einschaltverzogerung VDD= 15 V, RL= 30 , ID= 0.5 A, VGS= 10 V, RG= 25 Turn-Off Delay Time - Ausschaltverzogerung 1 2 Device mounted on standard PCB material Bauteil montiert auf Standard-Leiterplattenmaterial http://www.diotec.com/ (c) Diotec Semiconductor AG