Features
SOT-23 Package For surface mount application
Protects from line to VCC and line to ground
Low forward voltage and reverse recovery characteristics
Bidirectional-low-forward available with “ -04” suffix (Figure 2)
Tape & Reel EIA Standard 481.
Mechanical Data
Mounting Position: Any
Weight: .008 grams (approx.)
MAXIMUM RATINGS
Operating Temperature: -55oC to +125oC
Storage Temperature: -55oC to +150oC
Power Dissipation: 200 mWatts @ Tamb=25oC
Forward Continuous Current:
Surge Forward Current: 600mA @ tp<1s, Tamb=25oC
DESCRIPTION
Various configurations of Schottky barrier’ s diodes in SOT-23
package are provided for general-purpose use in high-speed
switching ,mixers and detector applications. They may also be
used for signal integrity and counteract the transmission-line
effects with (PC) board trances by clamping over/and undershoot
from signal reflections with the schottky-low-threshold voltages.
This type of termination also does not depend on matching
the transmission line characteristic impedance, making it
particularly useful where line impendance is unknown or a
variable. This methode of termination can control distortions of
clock, data, address, and control lines as well as provides a
stabilizing effect on signal jitter. It can also significantly reduce
power consumption compared to standard resistor-based
termination methods.
BAS40
THRU
BAS70
Surface Mount
Schottky Barrier
Diode
200 mWatt
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .110 .120 2.80 3.04
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
.079
2.000 in
c
h
es
mm
.031
.800
.035
.900
.
03
7
.950
.037
.950
K
A
B
C
D
E
F
G
H
J
SOT-23
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
Revision: A 2011/01/01
TM
Micro Commercial Components
1 of 4
@
IFM
BAS40 =200mA
Ta=25oC
@
IFM
BAS70 =70mA Ta=25oC
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
B .083 .104 2.10 2.64
BAS40 and BAS70
Figure 1 Figure 2 Figure 3 Figure 4
ELECTRICAL CHARACTERISTICS PER DIODE @ 250C Unless otherwise specified
Repetitive
Peak Reverse
Voltage
VRRM
(VOLTS)
Reverse
Breakdown
Voltage
Tested with
10µA Pulse
V(BR)R
(VOLTS)
Leakage Current
Pulse test
tp < 300µs @
For BAS40
VR = 30 V
For BAS70
VR = 50 V
IR (nA)
Forward Voltage Pulse Test
tp < 300µs
at IF = 1 mA
at IF = 40 mA
VF (mV)
Reverse
Recovery
Time from
IF= 10 mA
through
IR=10mA to
IR=1mA
trr (ns)
Thermal
Resistance
Junction to
Ambient Air
RthJA (K/W)
Capacitance
At VR = 0V
F = 1 MHz
Ctot
pF
DEVICE
TYPE
DEVICE
MARKING FIGURE
TYP MIN TYP MAX IF=1mA IF=15mA IF=40mA MAX MAX MAX
BAS40 43 1 40 40 10 200 380 1000 5 430 5
BAS40-04 44 2 40 40 10 200 380 1000 5 430 5
BAS40-05 45 3 40 40 10 200 380 1000 5 430 5
BAS40-06 46 4 40 40 10 200 380 1000 5 430 5
BAS70 73 1 70 70 10 200 410 1000 5 430 2
BAS70-04 74 2 70 70 10 200 410 1000 5 430 2
BAS70-05 75 3 70 70 10 200 410 1000 5 430 2
BAS70-06 76 4 70 70 10 200 410 1000 5 430 2
MCC
www.mccsemi.com
Revision: A 2011/01/01
TM
Micro Commercial Components
2 of 4
Typical Characteristics
Revision: A 2011/01/01
www.mccsemi.com
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MCC TM
Micro Commercial Components
BAS40 and BAS70
0.01
0.1
1
0.001
0.0001
01.0
0.6 0.8
0.4
0.2
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fi
g
.1 T
y
pical Forward Volta
g
e
T = -40ºC
A
T = 125ºC
A
T = 75ºC
A
T = 25ºC
A
T = 0ºC
A
0
1
3
2
010 20 40
30
C , TOTAL CAPACITANCE (pF)
T
V , REVERSE VOLTAGE (V)
R
Fi
g
.3 T
y
pical Capacitance
f=1MHz
0 100 200
T , AMBIENT TEMPERATURE (ºC)
A
Fi
g
. 4 Power Deratin
g
Curve, Total Packa
g
e
P , POWER DISSIPATION (mW)
d
0
50
100
150
200
0.1
1
10
100
1000
10000
010 20 30 40
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Fi
g
.2 T
y
pical Reverse Characteristics
I , INSTANTANEOUS REVERSE CURRENT (nA)
R
T = -40ºC
A
T = 25ºC
A
T = 75ºC
A
T = 125ºC
A
T = 0ºC
A
MCC
Revision: A 2011/01/01
TM
Micro Commercial Components
www.mccsemi.com
4 of 4
1
Device Packing
Part Number-TP Tape&Reel: 3Kpcs/Reel
Ordering Information :
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