4N35-X, 4N36-X, 4N37-X, 4N38
www.vishay.com Vishay Semiconductors
Rev. 1.8, 16-Jan-12 1Document Number: 83717
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output, with Base Connection
DESCRIPTION
This datasheet presents five families of Vishay industry
standard single channel phototransistor couplers. These
families include the 4N35, 4N36, 4N37, 4N38 couplers.
Each optocoupler consists of gallium arsenide infrared LED
and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL) listed to
comply with a 5000 V
RMS
isolation test voltage.
This isolation performance is accomplished through Vishay
double molding isolation manufacturing process. Comliance
to DIN EN 60747-5-5 partial discharge isolation specification
is available for these families by ordering option 1.
These isolation processes and the Vishay ISO9001 quality
program results in the highest isolation performance available
for a commecial plastic phototransistor optocoupler.
The devices are available in lead formed configuration suitable
for surface mounting and are available either on tape and reel,
or in standard tube shipping containers.
Note
• For additional design information see application note 45
normalized curves
FEATURES
• Isolation test voltage 5000 VRMS
• Interfaces with common logic families
• Input-output coupling capacitance < 0.5 pF
• Industry standard dual-in-line 6 pin package
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• AC mains detection
• Reed relay driving
• Switch mode power supply feedback
• Telephone ring detection
• Logic ground isolation
• Logic coupling with high frequency noise rejection
AGENCY APPROVALS
• UL file no. E52744 (pending)
• cUL tested to CSA 22.2 bulletin 5A
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
(pending), available with option 1
• BSI: EN 60065, EN 60950-1
•FIMKO
•CQC
Notes
• Additional options may be possible, please contact sales office.
(1) Also available in tubes; do not put T on end.
1
2
3
6
5
4
B
C
E
A
C
NC
i179004-14
ORDERING INFORMATION
4N3x-X0##T
PART NUMBER PACKAGE OPTION TAPE
AND
REEL
AGENCY CERTIFIED/PACKAGE CTR (%)
10 mA 20 mA
UL, cUL, BSI, FIMKO ≥ 100 ≥ 20
DIP-6 4N35-X000 4N36-X000 4N37-X000 4N38
DIP-6, 400 mil, option 6 4N35-X006 - 4N37-X006 -
SMD-6, option 7 4N35-X007T (1) 4N36-X007 4N37-X007 4N38-X007T (1)
SMD-6, option 9 4N35-X009T (1) 4N36-X009T (1) 4N37-X009 4N38-X009T
VDE, UL, cUL, BSI, FIMKO ≥ 100 ≥ 20
DIP-6 4N35-X001 - 4N37-X001 -
DIP-6, 400 mil, option 6 4N35-X016 - - -
SMD-6, option 7 4N35-X017T (1) ---
SMD-6, option 9 4N35-X019T - - -
7.62 mm 10.16 mm
> 8 mm 8 mm typ.
Option 7
Option 6
Option 9
DIP-6
4N35-X, 4N36-X, 4N37-X, 4N38
www.vishay.com Vishay Semiconductors
Rev. 1.8, 16-Jan-12 2Document Number: 83717
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR6V
Forward current IF60 mA
Surge current t ≤ 10 μs IFSM 2.5 A
Power dissipation Pdiss 70 mW
OUTPUT
Collector emitter breakdown voltage VCEO 70 V
Emitter base breakdown voltage VEBO 7V
Collector current IC50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA
Output power dissipation Pdiss 150 mW
COUPLER
Isolation test voltage t = 1 s VISO 5000 VRMS
Creepage distance ≥ 7mm
Clearance distance ≥ 7mm
Isolation thickness between emitter
and detector ≥ 0.4 mm
Comparative tracking index DIN IEC 112/VDE 0303, part 1 ≥ 175
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 100 °C
Soldering temperature (1) 2 mm from case, ≤ 10 s Tsld 260 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage (1) IF = 10 mA VF1.2 1.5 V
IF = 10 mA, Tamb = - 55 °C VF0.9 1.3 1.7 V
Reverse current (1) VR = 6 V IR0.1 10 μA
Capacitance VR = 0 V, f = 1 MHz CO25 pF
OUTPUT
Collector emitter breakdown
voltage (1) IC = 1 mA
4N35 BVCEO 30 V
4N36 BVCEO 30 V
4N37 BVCEO 30 V
4N38 BVCEO 80 V
Emitter collector breakdown
voltage (1) IE = 100 μA BVECO 7V
Collector base breakdown
voltage (1) IC = 100 μA, IB = 1 μA
4N35 BVCBO 70 V
4N36 BVCBO 70 V
4N37 BVCBO 70 V
4N38 BVCBO 80 V
4N35-X, 4N36-X, 4N37-X, 4N38
www.vishay.com Vishay Semiconductors
Rev. 1.8, 16-Jan-12 3Document Number: 83717
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(1) Indicates JEDEC registered value.
Note
(1) Indicates JEDEC registered values.
Note
(1) Indicates JEDEC registered values.
Fig. 1 - Test Circuit, Non-Saturated Operation Fig. 2 - Switching Times
OUTPUT
Collector emitter leakage current (1)
VCE = 10 V, IF = 0 4N35 ICEO 550nA
4N36 ICEO 550nA
VCE = 10 V, IF = 0 4N37 ICEO 550nA
VCE = 60 V, IF = 0 4N38 ICEO 50 nA
VCE = 30 V, IF = 0,
Tamb = 100 °C
4N35 ICEO 500 μA
4N36 ICEO 500 μA
4N37 ICEO 500 μA
VCE = 60 V, IF = 0,
Tamb = 100 °C 4N38 ICEO 6μA
Collector emitter capacitance VCE = 0 CCE 6pF
coupler
Resistance, input output (1) VIO = 500 V RIO 1011 Ω
Capacitance, input output f = 1 MHz CIO 0.5 pF
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
IC/IF (1)
VCE = 10 V, IF = 10 mA
4N35 CTRDC 100 %
4N36 CTRDC 100 %
4N37 CTRDC 100 %
VCE = 10 V, IF = 20 mA 4N38 CTRDC 20 %
VCE = 10 V, IF = 10 mA,
TA = - 55 °C to + 100 °C
4N35 CTRDC 40 50 %
4N36 CTRDC 40 50 %
4N37 CTRDC 40 50 %
4N38 CTRDC 30 %
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Turn-on time (1) VCC = 5 V, IC = 2 mA, RL = 100 Ωton 10 μs
Turn-off time (1) VCC = 5 V, IC = 2 mA, RL = 100 Ωtoff 10 μs
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Channel I
Channel II
95 10804-3
R
G
= 50 Ω
t
p
t
p
= 50 µs
T= 0.01
+ 5 V
I
F
0
50 ΩRL
I
F
Oscilloscope
R
L
= 1 MΩ
C
L
= 20 pF
tpt
t
0
0
10 %
90 %
100 %
tr
td
ton
tstf
toff
IF
IC
tpPulse duration
tdDelay time
trRise time
ton (= td + tr) Turn-on time
tsStorage time
tfFall time
toff (= ts + tf) Turn-off time
96 11698
4N35-X, 4N36-X, 4N37-X, 4N38
www.vishay.com Vishay Semiconductors
Rev. 1.8, 16-Jan-12 4Document Number: 83717
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Voltage vs. Forward Current
Fig. 4 - Collector Current vs. Collector Emitter Voltage (NS)
Fig. 5 - Collector Current vs. Collector Emitter Voltage (sat)
Fig. 6 - Leakage Current vs. Ambient Temperature
Fig. 7 - Normalized CTR (NS) vs. Ambient Temperature
Fig. 8 - Normalized CTR (sat) vs. Ambient Temperature
0.6
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.8
0.1 1 10 100
IF - Forward Current (mA)
V
F
- Forward Voltage (V)
Tamb = - 55 °C
1.5
0.7
Tamb = - 40 °C
Tamb = 100 °C
Tamb = 75 °C
Tamb = 50 °C
Tamb = 25 °C
Tamb = 0 °C
Tamb = - 25 °C
1.6
1.7
0
20
30
40
50
60
01 78
VCE - Collector Emitter Voltage (NS) (V)
I
C
- Collector Current (mA)
10
65432
I
F
= 20 mA
I
F
= 15 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 5 mA
0
10
15
20
25
00.4
VCE - Collector Emitter Voltage (sat) (V)
I
C
- Collector Current (mA)
5
0.30.20.1
I
F
= 10 mA
I
F
= 25 mA
I
F
= 5 mA
I
F
= 2 mA
I
F
= 1 mA
0.001
0.01
0.1
10
1
100
1000
10 000
- 60 100
Tamb - Ambient Temperature (°C)
I
CE0
- Leakage Current (nA)
V
CE
= 40 V
- 40 806040200- 20
I
F
= 0 mA
V
CE
= 12 V
V
CE
= 24 V
0
0.2
0.6
0.4
0.8
1.0
1.2
- 60 100
Tamb - Ambient Temperature (°C)
CTR
Norm
- Normalized CTR (NS)
- 40 806040200- 20
IF = 5 mA
IF = 10 mA
IF = 1 mA
VCE = 5 V
0
0.2
0.6
0.4
0.8
1.0
1.2
- 60 100
Tamb - Ambient Temperature (°C)
CTR
Norm
- Normalized CTR (sat)
- 40 806040200- 20
IF = 5 mA
IF = 10 mA
IF = 1 mA
VCE = 0.4 V
4N35-X, 4N36-X, 4N37-X, 4N38
www.vishay.com Vishay Semiconductors
Rev. 1.8, 16-Jan-12 5Document Number: 83717
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Normalized CTR (NS) vs. Forward Current
Fig. 10 - Normalized CTR (sat) vs. Forward Current
Fig. 11 - CTR Frequency vs. Phase Angle
Fig. 12 - CTR Frequency vs. Collector Current
Fig. 13 - Switching Time vs. Load Resistance
0
0.2
0.6
0.4
0.8
1.0
1.2
0.1 100
IF - Forward Current (mA)
CTR
Norm
- Normalized CTR (NS)
110
Tamb = - 55 °C
Tamb = - 40 °C
Tamb = 0 °C
Tamb = 25 °C
Tamb = 50 °C
Tamb = 75 °C
Tamb = 100 °C
VCE = 5 V
0
0.2
0.6
0.4
0.8
1.0
1.2
0.1 100
IF - Forward Current (mA)
CTR
Norm
- Normalized CTR (sat)
110
Tamb = - 55 °C
Tamb = - 40 °C
Tamb = 0 °C
Tamb = 25 °C
Tamb = 50 °C
Tamb = 75 °C
Tamb = 100 °C
VCE = 0.4 V
- 160
- 140
- 60
- 40
0
1 1000
f - Frequency (kHz)
Phase (deg)
- 20
10 100
V
CE
= 5 V
- 80
- 100
- 120
1
10
1000
0.1 100
IC - Collector Current (mA)
f
CTR
- CTR Frequency (kHz)
100
110
VCC = 5 V
0.1
1
10
1000
0.1 100
RL - Load Resistance (kΩ)
t
on
, t
off
- Switching Time (μs)
100
110
VCE = 5 V, IF = 10 mA
ton
toff
4N35-X, 4N36-X, 4N37-X, 4N38
www.vishay.com Vishay Semiconductors
Rev. 1.8, 16-Jan-12 6Document Number: 83717
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
PACKAGE MARKING
Notes
• VDE logo is only marked on option 1 parts. Option information is not marked on the part.
• Tape and reel suffix (T) is not part of the package marking.
22530
0.26
3.5 ± 0.3
7.62 ± 0.3
0.5 ± 0.1
2.54 ± 0.25
3.3 ± 0.5
6.5 ± 0.5
7.3 ± 0.5
7.62 to 9.98
1.1 ± 0.1
0.5 typ.
2.8 ± 0.5
4N36
V YWW 25
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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