SILICON NPN TRANSISTOR BFY51 * V(BR)CEO = 30V (Min). * Hermetic TO-39 Metal Package. * Ideally Suited General Purpose Amplifier Applications * Screening Options Available * ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO VCEO VEBO IC PD PD Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current TA = 25C Total Power Dissipation at Derate Above 25C TC = 25C Total Power Dissipation at Derate Above 25C TJ Tstg Junction Temperature Range Storage Temperature Range 60V 30V 6V 1.0A 0.8W 4.57mW/C 5W 28.6mW/C -65 to +200C -65 to +200C THERMAL PROPERTIES Symbols Parameters Max. Units RJA Thermal Resistance, Junction To Ambient 218.75 C/W RJC Thermal Resistance, Junction To Case 35 C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9728 Issue 1 Page 1 of 3 SILICON NPN TRANSISTOR BFY51 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Symbols Parameters Test Conditions IC = 10mA IB = 0 30 IC = 10A IE = 0 60 V(BR)EBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage IE = 10A IC = 0 6 ICBO Collector Cut-Off Current VCB = 40V IE = 0 50 nA TA = 100C 2.5 A IEBO Emitter Cut-Off Current IC = 0 50 nA TA = 100C 2.8 A (1) V(BR)CEO V(BR)CBO hFE Forward-current transfer ratio (1) (1) VCE(sat) VBE(sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VEB = 5V Min. Typ Max. Units V IC = 10mA VCE = 6V 30 IC = 150mA VCE = 6V 40 IC = 1.0A VCE = 6V 15 IC = 150mA IB = 15mA 0.35 IC = 1.0A IB = 100mA 1.6 IC = 1.0A IB = 100mA 2 IC = 1.0mA VCE = 6V V DYNAMIC CHARACTERISTICS hfe Small-Signal Current Gain fT Transition Frequency Cobo Output Capacitance 30 f = 1.0KHz IC = 50mA VCE = 6V 50 MHz f = 20MHz VCB = 12V IE = 0 12 pF f = 1.0MHz Notes (1) Pulse Width 380us, 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9728 Issue 1 Page 2 of 3 SILICON NPN TRANSISTOR BFY51 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45 TO-39 (TO-205AD) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Pin 3 - Collector Website: http://www.semelab-tt.com Document Number 9728 Issue 1 Page 3 of 3