VNH7013XP-E Automotive integrated H-bridge Features Type RDS(on) Iout Vccmax VNH7013XP-E 13 m typ (per leg) 40 A 72 V(1) 1. Per leg: sum of the two BVdss (HSD + LSD); VCC > 36 V whole bridge must be switched off; Maximum VCC voltage: 72 V 10 V compatible inputs RDS(on) per leg: 13 m typical Embedded thermal sensor: -8.1 mV/K Very low stray inductance in power line PowerSSO-36 TP Description The VNH7013XP-E is an automotive integrated H-bridge intended for a wide range of automotive applications driving DC motors. The device incorporates a dual channel and two single channel MOSFETs. All the devices are designed using STMicroelectronics(R) well known and proven proprietary VIPower(R) M0-S7 technology that allows to integrate in a package four different channels in H-bridge topology. This package, specifically designed for the harsh automotive environment offers improved thermal performance thanks to exposed die pads. Moreover, its fully symmetrical mechanical design allows superior manufacturability at board level. Table 1. Device summary Order codes Package PowerSSO-36 TP January 2012 Tube Tape and reel VNH7013XP-E VNH7013XPTR-E Doc ID 022370 Rev 3 1/24 www.st.com 1 Contents VNH7013XP-E Contents 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 2.1 Absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.1 4 5 2/24 PowerSSO-36 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.1.1 Thermal calculation in clockwise and anti-clockwise operation in steadystate mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.1.2 Thermal resistances definition (values according to the PCB heatsink area) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.1.3 Thermal calculation in transient mode . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.1.4 Single pulse thermal impedance definition (values according to the PCB heatsink area) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.1 ECOPACK(R) packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.2 PowerSSO-36 TP package information . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.3 PowerSSO-36 TP packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Doc ID 022370 Rev 3 VNH7013XP-E List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Power off. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Power on. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Gate resistance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Switching on HSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Switching on LSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Switching off HSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Switching off LSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal calculation in clockwise and anti-clockwise operation in steady-state mode . . . . 16 Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 PowerSSO-36 TP mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Doc ID 022370 Rev 3 3/24 List of figures VNH7013XP-E List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. 4/24 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Configuration diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Single pulse maximum current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Gate charge vs gate-source voltage HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Gate charge vs gate-source voltage LS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Capacitance variations HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Capacitance variations LS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Thermal sensor voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Gate charge test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Test circuit for inductive load switching and diode recovery times . . . . . . . . . . . . . . . . . . . 13 Switching times test circuit for resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 PowerSSO-36 PC board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Chipset configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Auto and mutual Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . 16 PowerSSO-36 HSD thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . 18 PowerSSO-36 LSD thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . 18 Thermal fitting model of an H-bridge in PowerSSO-36. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 PowerSSO-36 TP package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 PowerSSO-36 TP tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 PowerSSO-36 TP tape and reel shipment (suffix "TR") . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Doc ID 022370 Rev 3 VNH7013XP-E Figure 1. Block diagram Figure 2. Configuration diagram Gate 4 Drain4 Source4 Source4 Source4 Source4 Source4 Drain4 Source4 TSA+ Source2 Source2 Drain2 Source2 Source2 Source2 Source2 Gate 2 Drain M3 Block diagram and pin description Drain M4 1 Block diagram and pin description Drain M1,M2 Doc ID 022370 Rev 3 Gate 3 Drain3 Source3 Source3 Source3 Source3 Source3 Drain3 Source3 TSKTSASource1 Source1 Drain1 Source1 Source1 Source1 Source1 Gate 1 5/24 Block diagram and pin description Table 2. 6/24 VNH7013XP-E Pin definitions and functions Pin number Symbol Function 1 Gate 4 Gate of the LSD 4 2, 8 Drain 4 Drain of the LSD 4 3, 4, 5, 6, 7, 9 Source 4 10 TSA+ 11, 12, 14, 15, 16, 17 Source 2 13 Drain 2 Drain of the HSD 2 18 Gate 2 Gate of the HSD 2 19 Gate 1 Gate of the HSD 1 20, 21, 22, 23, 25, 26 Source 1 24 Drain 1 27 TSK- 28, 30, 31, 32, 33, 34 Source 3 29, 35 Drain 3 Drain of the LSD 3 36 Gate 3 Gate of the LSD 3 Source of the LSD 4 Thermal sensor anode Source of the HSD 2 Source of the HSD 1 Drain of the HSD 1 Thermal sensor cathode Source of the LSD 3 Doc ID 022370 Rev 3 VNH7013XP-E Electrical specifications 2 Electrical specifications 2.1 Absolute maximum rating Table 3. Absolute maximum rating Symbol Parameter Value Unit VCC Supply voltage (whole bridge switched off) 72 V Imax Maximum output current (continuous) 40 A Maximum gate source voltage 18 V VGS_max Maximum Single Pulse output current (1) 80 A Tj Junction operating temperature 175 C Tc Case operating temperature -40 to 150 C Storage temperature -55 to 150 C 40 A IPulse_max TSTG IS Diode continuous forward current 1. Pulse duration = 20 ms (seeFigure 3). Figure 3. Single pulse maximum current Doc ID 022370 Rev 3 7/24 Electrical specifications 2.2 VNH7013XP-E Electrical characteristics Tj = 25 C, unless otherwise specified. Table 4. Symbol V(BR)DSS IDSS IGSS Table 5. Symbol Power off Parameter Test conditions Drain-source breakdown voltage ID = 10 mA, VGS = 0 V Zero gate voltage drain current (VGS=0V) -- V 100 A VDS = 28 V; Tj = 25 C -- 10 A -- 100 nA Gate-source leakage current VGS = 10 V (VDS=0V) Power on Parameter Test conditions dVGS(th)/dT Gate threshold voltage VDS = VGS; ID = 1 mA temperature derating RDS(on) HS Static drain-source on resistance VGS = 10 V; ID = 5 A; Tj = 25 C RDS(on) LS Static drain-source on resistance VGS = 10 V; ID = 5 A; Tj = 25 C Min. Typ. Max. 2 4 Unit V 7.5 mV/C 5.7 m VGS = 10 V; ID = 5 A; Tj = 150 C 11.9 7.3 VGS = 10 V; ID = 5 A; Tj = 150 C m m 15.1 m Dynamic Parameter Test condition Gfs_HS(1) Forward transconductance Gfs_LS(1) Forward transconductance Ciss_HS Input capacitance VDS = 15 V; ID = 20 A; Tj = 25 C VDS = 25 V; f = 1 MHz; VGS = 0 V (see Figure 6) Coss_HS Output capacitance Crss_HS Reverse transfer capacitance Ciss_LS Input capacitance VDS = 25 V; f = 1 MHz; VGS = 0 V (see Figure 7) Coss_LS Output capacitance Crss_LS Reverse transfer capacitance 1. Pulsed: pulse duration = 300s, duty cycle 1.5%. 8/24 36 Max. Unit -- Gate threshold voltage VDS = VGS; ID = 1 mA Symbol Typ. VDS = 28 V; -40 C < Tj < 150 C VGS(th) Table 6. Min. Doc ID 022370 Rev 3 Min. Typ. Max. Unit -- 20 -- S -- 17.5 -- S -- 1836 -- pF -- 426 -- pF -- 55 -- pF -- 1250 -- pF -- 311 -- pF -- 49 -- pF VNH7013XP-E Electrical specifications Table 7. Gate resistance Symbol Parameter RG_HS Gate resistance HS RG_LS Gate resistance LS Table 8. Symbol VSD(1) Test condition Min. Typ. Max. Unit -- 20 -- -- 13 -- Min. Typ. Max. Unit -- 0.9 1.1 V -- 50 ns -- 28 nC -- 0.8 A Min. Typ. Max. Unit -- 53 -- ns -- 319 -- ns -- 36 -- nC -- 8.5 -- nC -- 5 -- nC Min. Typ. Max. Unit -- 53 -- ns -- 430 -- ns -- 23 -- nC -- 6 -- nC -- 2.5 -- nC Min. Typ. Max. Unit -- 253 -- ns -- 169 -- ns VDD = 15 V; fgate = 1 MHz Source drain diode Parameter Test conditions ISD = 20 A; VGS = 0 V; Tj = 25 C Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 20 A; di/dt = 100 A/s; VDD = 20 V; Tj = 150 C (see Figure 10) 1. Pulse width limited by safe operating area. Table 9. Symbol td(on) tr Switching on HSD Parameter Turn on delay time Rise time Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Table 10. Symbol td(on) tr Turn on delay time Rise time Qgs Gate-source charge Qgd Gate-drain charge td(off) tf VDD = 15 V; ID = 20 A; VGS = 10 V (see Figure 4 and Figure 9) Parameter Total gate charge Symbol VDD = 15 V; ID = 20 A; RG = 4.7 ; VGS = 10 V Switching on LSD Qg Table 11. Test conditions Test conditions VDD = 15 V; ID = 20 A; RG = 4.7 ; VGS = 10 V VDD = 15 V; ID = 20 A; VGS = 10 V (see Figure 5 and Figure 9) Switching off HSD Parameter Turn-off delay time Fall time Test conditions VDD = 15 V; ID = 20 A; RG = 4.7 ; VGS = 10 V (see Figure 11) Doc ID 022370 Rev 3 9/24 Electrical specifications Table 12. VNH7013XP-E Switching off LSD Symbol Parameter Turn-off delay time td(off) tf Fall time Test conditions VDD = 15 V; ID = 20 A; RG = 4.7 ; VGS = 10 V (see Figure 11) Min. Typ. Max. Unit -- 124 -- ns -- 293 -- ns Min. Typ. Max. Unit 3.72 3.88 4.04 V Thermal sensor(1) Table 13. Symbol Parameter Test conditions VF Chain diode forward voltage Tj = 25 C; IF = 250 A (see Figure 8) SF Chain temperature coefficient -40 C < Tj < 175 C; IF = 250 A -8.1 mV/K 1. See Figure 8. Figure 4. Gate charge vs gate-source voltage HS 6GS6 6 $3 6 )$ 1GN# '!0'#&4 10/24 Doc ID 022370 Rev 3 VNH7013XP-E Electrical specifications Figure 5. Gate charge vs gate-source voltage LS 6GS6 6 $3 6 )$ 1GN# Figure 6. '!0'#&4 Capacitance variations HS #P& F -HZ 6GS #ISS #OSS #RSS 6DS6 Doc ID 022370 Rev 3 '!0'#&4 11/24 Electrical specifications Figure 7. VNH7013XP-E Capacitance variations LS #P& F -HZ 6GS #ISS #OSS #RSS 6DS6 '!0'#&4 Figure 8. Thermal sensor voltage vs temperature U! U! 6F?TH?6 U! U! U! # # # # # '!0'#&4 12/24 Doc ID 022370 Rev 3 VNH7013XP-E Figure 9. Electrical specifications Gate charge test circuit Figure 10. Test circuit for inductive load switching and diode recovery times Doc ID 022370 Rev 3 13/24 Electrical specifications VNH7013XP-E Figure 11. Switching times test circuit for resistive load 14/24 Doc ID 022370 Rev 3 VNH7013XP-E Package and PCB thermal data 3 Package and PCB thermal data 3.1 PowerSSO-36 thermal data Figure 12. PowerSSO-36 PC board Double layers: footprint Double layers: 2cm2 of Cu TBD Double layers: 8cm2 of Cu Four layers: Cu on top layer: 16 cm2; Cu on bottom layer: 32 cm2; Cu on middle layer: total coverage Doc ID 022370 Rev 3 15/24 Package and PCB thermal data VNH7013XP-E Figure 13. Chipset configuration 5WK$ $IJQ 5WK$ % 5WK$ & $IJQ $IJQ 5WK% 5WK& 5WK% & ("1($'5 Figure 14. Auto and mutual Rthj-amb vs PCB copper area in open box free air condition 2TH! 2TH" 2TH# 2TH!" 2TH!# 2TH"# #7 CM OF #U !REA REFER TO 0#" LAYOUT '!0'#&4 Note: Referred to double layer PCB 3.1.1 Thermal calculation in clockwise and anti-clockwise operation in steady-state mode Table 14. Thermal calculation in clockwise and anti-clockwise operation in steadystate mode HSA HSB LSA LSB 16/24 TjHSAB TjLSA TjLSB ON OFF OFF ON PdHSA x RthHS + PdLSB PdHSA x RthHSLS + x RthHSLS + Tamb PdLSB x RthLSLS + Tamb PdHSA x RthHSLS + PdLSB x RthLS + Tamb OFF ON PdHSB x RthHS + PdLSA PdHSB x RthHSLS + x RthHSLS + Tamb PdLSA x RthLS + Tamb PdHSB x RthHSLS + PdLSA x RthLSLS + Tamb ON OFF Doc ID 022370 Rev 3 VNH7013XP-E 3.1.2 Package and PCB thermal data Thermal resistances definition (values according to the PCB heatsink area) RthHS = RthHSA = RthHSB = High Side Chip Thermal Resistance Junction to Ambient (HSA or HSB in ON state) RthLS = RthLSA = RthLSB = Low Side Chip Thermal Resistance Junction to Ambient RthHSLS = RthHSALSB = RthHSBLSA = Mutual Thermal Resistance Junction to Ambient between High Side and Low Side Chips RthLSLS = RthLSALSB = Mutual Thermal Resistance Junction to Ambient between Low Side Chips 3.1.3 Thermal calculation in transient mode(a) TjHSAB = ZthHS x PdHSAB + ZthHSLS x (PdLSA + PdLSB) + Tamb TjLSA = ZthHSLS x PdHSAB + ZthLS x PdLSA + ZthLSLS x PdLSB + Tamb TjLSB = ZthHSLS x PdHSAB + ZthLSLS x PdLSA + ZthLS x PdLSB + Tamb 3.1.4 Single pulse thermal impedance definition (values according to the PCB heatsink area) ZthHS = High Side Chip Thermal Impedance Junction to Ambient ZthLS = ZthLSA = ZthLSB = Low Side Chip Thermal Impedance Junction to Ambient ZthHSLS = ZthHSABLSA = ZthHSABLSB = Mutual Thermal Impedance Junction to Ambient between High Side and Low Side Chips ZthLSLS = ZthLSALSB = Mutual Thermal Impedance Junction to Ambient between Low Side Chips Equation 1: pulse calculation formula Z TH = R TH + Z THtp ( 1 - ) where = t p T a. Calculation is valid in any dynamic operating condition. Pd values set by user. Doc ID 022370 Rev 3 17/24 Package and PCB thermal data Figure 15. VNH7013XP-E PowerSSO-36 HSD thermal impedance junction ambient single pulse :4( (3$ CU AREA (3$ FOOTPRINT (3$ CM> #U (3$ CM> #U (3$ ,AYE R (S,S$ FOOTPRINT (S,S$ CM> #U (S,S$ CM> #U (S,S$ ,AYE R :HS #7 :HSLS TIME SEC '!0'#&4 Figure 16. PowerSSO-36 LSD thermal impedance junction ambient single pulse :4( ,3$ CU AREA ,3$ FOOTPRINT ,3$ CM> #U ,3$ CM> #U ,3$ ,AYE R ,S,S$ FOOTPRINT ,S,S$ CM> #U ,S,S$ CM> #U ,S,S$ ,AYE R #7 :LS :LSLS TIME SEC 18/24 Doc ID 022370 Rev 3 '!0'#&4 VNH7013XP-E Package and PCB thermal data Figure 17. Thermal fitting model of an H-bridge in PowerSSO-36 Table 15. Thermal parameters(1) Area/island (cm2) Footprint R1 = R7 (C/W) 0.2 R2 = R8 (C/W) 1.6 2 8 4L R3 (C/W) 8 R4 (C/W) 30 16 16 10 R5 (C/W) 40 22 12 5 R6 (C/W) 36 28 10 6 R9 = R15 (C/W) 0.1 R10 = R16 (C/W) 2.8 R11 = R17 (C/W) 22 14 14 14 R12 = R18 (C/W) 49 30 30 20 R13 = R19 (C/W) 52 36 28 16 R14 = R20 (C/W) 50 32 26 18 R21 = R22 (C/W) 80 60 50 40 R23 (C/W) 80 50 45 30 0.8 C1 = C7 = C9 = C15 (W.s/C) 0.001 C2 = C8 (W.s/C) 0.009 C3 (W.s/C) 0.09 C4 (W.s/C) 0.5 0.8 0.8 C5 (W.s/C) 0.8 1.4 2 3 C6 (W.s/C) 5 6 8 10 C10 = C16 (W.s/C) 0.1 C11 = C17 (W.s/C) 0.07 C12 = C18 (W.s/C) 0.45 0.45 0.45 0.6 C13 = C19 (W.s/C) 0.8 1 1.2 2.5 C14 = C20 (W.s/C) C21 = C22 = C23 (W.s/C) 4 5 6 8 0.01 0.006 0.005 0.005 1. The blank space means that the value is the same as the previous one. Doc ID 022370 Rev 3 19/24 Package and packing information VNH7013XP-E 4 Package and packing information 4.1 ECOPACK(R) packages In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 4.2 PowerSSO-36 TP package information Figure 18. PowerSSO-36 TP package dimensions 20/24 Doc ID 022370 Rev 3 VNH7013XP-E Package and packing information Table 16. PowerSSO-36 TP mechanical data Millimeters Symbol Min. Typ. Max. A 2.15 2.47 A2 2.15 2.40 a1 0 0.1 b 0.18 0.36 c 0.23 0.32 D 10.10 10.50 E 7.4 7.6 e 0.5 e3 8.5 F 2.3 G H 0.1 10.1 10.5 h 0.4 k 0 deg 8 deg L 0.6 1 M 4.3 N 10 deg O 1.2 Q 0.8 S 2.9 T 3.65 U 1.0 X1 1.85 2.35 Y1 3 3.5 X2 1.85 2.35 Y2 3 3.5 X3 4.7 5.2 Y3 3 3.5 Z1 0.4 Z2 0.4 Doc ID 022370 Rev 3 21/24 Package and packing information 4.3 VNH7013XP-E PowerSSO-36 TP packing information Figure 19. PowerSSO-36 TP tube shipment (no suffix) C B Base Qty Bulk Qty Tube length (0.5) A B C (0.1) 49 1225 532 3.5 13.8 0.6 All dimensions are in mm. A Figure 20. PowerSSO-36 TP tape and reel shipment (suffix "TR") Reel dimensions Base Qty Bulk Qty A (max) B (min) C (0.2) F G (+2 / -0) N (min) T (max) 1000 1000 330 1.5 13 20.2 24.4 100 30.4 Tape dimensions According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 (0.1) P D (0.05) D1 (min) F (0.1) K (max) P1 (0.1) 24 4 12 1.55 1.5 11.5 2.85 2 End All dimensions are in mm. Start Top cover tape No components Components 500mm min 500mm min Empty components pockets sealed with cover tape. User direction of feed 22/24 Doc ID 022370 Rev 3 No components VNH7013XP-E 5 Revision history Revision history Table 17. Document revision history Date Revision Changes 07-Nov-2011 1 Initial release 18-Jan-2012 2 Changed document status from preliminary data to datasheet. 20-Jan-2012 3 Updated features list. Doc ID 022370 Rev 3 23/24 VNH7013XP-E Please Read Carefully: Information in this document is provided solely in connection with ST products. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 24/24 Doc ID 022370 Rev 3 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: STMicroelectronics: VNH7013XPTR-E VNH7013XP-E