blue binder, tab 4 Philips Components GENERAL DESCRIPTION PowerMOS transistor QUICK REFERENCE DATA BUK455-200A BUK455-200B N-channel enhancement mode SYMBOL; PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 | -200A | -200B The device is intended for use in Vos Drain-source voltage 200 200 Vv Switched Mode Power Supplies lo Drain current (DC) 14 13 A (SMPS), motor control, welding, Prot Total power dissipation 125 125 Ww DC/DC and AC/DC converters, T Junction temperature 175 175 c and in general purpose switching Fosiony Drain-source on-state resistance] 0.23 0.28 Q applications. MECHANICAL DATA Dimensions in mm 45 max Net Mass: 2g 10,3 13 ~ rT Pinning: O74 59 1 = Gate i min 2 = Drain i 15,8 I max 3 = Source r 35 max 5,1 not tinne max d ~f 1,3 max 4 (2x) 0.9 max (3x) Le 06 2,54 2,54 wt Me 24 9 s Fig.1 TO220AB; drain connected ta mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Accessories supplied on request: refer to Mounting instructions for TO220 envelopes. January 1989 PHILIPS PowerMOS transistor BUK455-200A BUK455-200B RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL | PARAMETER CONDITIONS MIN. MAX. UNIT Vos Drain-source voltage - - 200 Vv Voar Orain-gate voltage Reg = 20 kQ - 200 v +Ves Gate-source voltage - - 30 v -200A -200B lo Drain current (DC) Tr = 25C - 14 13 A Ip Drain current (DC) Tr = 100C - 10 9 A lom Drain current (pulse peak value) |T,, = 25C - 56 52 A P Total power dissipation Tr = 25C - 125 Ww Tos Storage temperature a -55 175 C T, Junction Temperature : - 175 Cc THERMAL RESISTANCES From junction to mounting base Rij = 1-2 KW From junction to ambient Riza = 60 K/W STATIC CHARACTERISTICS Tw = 25 C unless otherwise specified SYMBOL | PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Vieross Drain source breakdown Ves = 0 V3 1p = 0.25 mA 200 - . v voltage Vasitoy Gate threshold voltage Vos = Vas: Ip = 1 MA 2.1 3.0 4.0 Vv lose Zero gate voltage drain current |Vog = 200 V: Veg = 0 V; T, = 25C : 1 | 10 | pa loss Zero gate voltage drain current | Vos = 200 V; Veg = 0 V: T; =125 C - 1 1.0 mA s Gate source leakage current Ves = +30 V; Vos = OV - 10 100 nA DS(ON) Drain-source on-state Ves = 10 V; BUK455-200A - 0.2 | 0.23 Q resistance Ib=7A BUK455-200B]_- 0.22 | 0.28 Q DYNAMIC CHARACTERISTICS Tm = 25 C unless otherwise specified SYMBOL | PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Os Forward transconductance Vog = 25 Vilb=7A 6 8.4 : Cin Input capacitance Veg = 0 Vi Vos = 25 Vi f = 1 MHz - 1400 | 1750 | pF Coss Output capacitance : 190 | 250 pF Coss Feedback capacitance : 55 80 pF ty on Tum-on delay time Vop = 30 V; Ip = 3 A; - 18 30 ns t Tum-on rise time Veg = 10 Vi Reg = 50.0; - 35 60 ns te on Tum-off delay time Roen = 50 Q - 85 | 120 | ns i Tum-off fall time - 35 50 ns La Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die ly Internal drain inductance Measured from drain lead 6 mm - 45 - nH from package to centre of die L, Internal source inductance Measured from source lead 6 mm - 75 - nH from package to source bond pad December 1988 Philips Components PowerMOS transistor BUK455-200A BUK455-200B REVERSE DIODE RATINGS AND CHARACTERISTICS Tr = 25 C unless otherwise specified lon loam so. 6, SYMBOL | PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Continuous reverse drain - - - 14 A current Pulsed reverse drain current - - - 56 A Diode forward voitage le =14A;Vog = OV - 1.0 1.5 v Reverse recovery time I; = 14 A; -dl_/dt = 100 A/us; - 200 - ns Reverse recovery charge Ves = 0 V; Vg = 30 V : 0.25 - ie; AVALANCHE RATING . Try = 25 C unless otherwise specified unclamped inductive turn-off SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Woss Drain-source non-repetitive lp = 14.A; Vp) S$ 100 V; - - 100 mJ Vos = 10 V ; Res = 50 2 energy Normalised Power Derating eoS8Ss SSIES 0 2 40 60 8 190 120 140 160 180 Tmb/ C Fig.2. Normalised power dissipation. PD% = 100-Py/Pp 25 c= {Tres} 1 10 100 1000 vOS/V fig-4. Safe operating area. Tp = 25 C Ip & om = f(Vps); low Single pulse; parameter ( Normalised Current Derating oO 2 40 6 & 190 120 140 160 180 1.03 " Tmb/ C t/s Fig.3. Normalised continuous drain current. Fig.5. Transient thermal impedance. ID% = 100-lo/Ip 25-c = f{Trw); Conditions: Veg 2 10 V Zinime = 1); parameter D = t/T December 1988 Philips Components PowerMOS transistor BUK455-200A BUK455-200B o 0 2 4 6 8 10 12 14 6 18 20 0 4 8 12 16 20 24 26 vOos/V O/A Fig.6.' Typical output characteristics, T, = 25 C. Fig.9. Typical transconductance, T, = 25 "C. Ip = f(Vog); parameter Vg Qs = f(Ip); CONdItIONS: Vps = 25 V Normalised 28 26 24 22 20 18 1.6 14 12 1.0 o8 ae 0.4 0.2 o 4 8 w2 16 20 24 28 oO -20 20 60, 100 140 180 1A qe Fig.7. Typical on-state resistance, T, = 25 C. Fig.10. Normalised drain-source on-state resistance. DS(ON) = (lp); parameter Ves a= Roson/Rosion2s c= KT); Ip = 7A; Vog = 10V o 2 4 6 a 10 60 20 20 60 . 100 140 180 vGs/v yee Fig.8. Typical transfer characteristics. Fig.11. Gate threshold voltage. Ip = f(Ves) ; Conditions: Vos = 25 V; parameter T, Vesyro, = f(T); conditions: Ip = 1 MA; Vos = Ves December 1988 Philips Components PowerMOS transistor BUK455-200A BUK455-200B 1601 D/A SUB8- THRESHOLD CONDUCTION 2 VGS/Vv Fig.12. Sub-threshoild drain current. fp = f(Vas,; conditions: T, = 25 C; Vos = Vas o o vsos/ v Fig.15. Typical reverse diode current. Ip = f(Vsps); Conditions: Vag = 0 V; parameter T, 0 20 a vos/V Fig.13. Typical capacitances, Cis, Coss: Cres: = f(Vps); Conditions: Ves = 0 V; f = 1 MHz oS8essRggs 20 40 60 a 100 , 120 140 160 180 Tmb/ Fig.16. Normalised avalanche energy rating. Woss% = f(T); conditions: Ip = 14A am] Qo 10 20 w% OG /ne Fig. 14. Typical turn-on gate-charge characteristics. as = 1(Q,); conditions: lp = 14 A; parameter Vos ~ Fig.17. Avalanche energy test circuit. Woss =0.5- Li * BV ogs/(BV ss Vp) December 1988 M89-1157/RC Philips Components