BSL211SP Rev 1.2 OptiMOS-P Small-Signal-Transistor Feature Product Summary * P-Channel VDS -20 V * Enhancement mode RDS(on) 67 m * Super Logic Level (2.5 V rated) ID -4.7 * 150C operating temperature A P-TSOP6-6 * Avalanche rated * dv/dt rated 4 * Pb-free lead plating; RoHS compliant 3 2 1 5 6 * Qualified according to AEC Q101 Type Package Tape and reel BSL211SP P-TSOP6-6 L6327: 3000pcs/r. sPB Drain pin 1,2, 5,6 Gate pin 3 Marking Source pin 4 Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25C -4.7 TA=70C -3.8 ID puls Pulsed drain current Unit -18.8 TA=25C EAS 26 mJ dv/dt -6 kV/s Gate source voltage VGS 12 V Power dissipation Ptot 2 W -55... +150 C Avalanche energy, single pulse ID =-4.7 A , VDD =-10V, RGS =25 Reverse diode dv/dt IS =-4.7A, VDS =-16V, di/dt=200A/s, Tjmax =150C TA=25C Tj , Tstg Operating and storage temperature 55/150/56 IEC climatic category; DIN IEC 68-1 Page 1 2012-03-14 BSL211SP Rev 1.2 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 50 - - 230 - - 62.5 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -20 - - VGS(th) -0.6 -0.9 -1.2 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =-250A Gate threshold voltage, VGS = VDS ID =-25A Zero gate voltage drain current A IDSS VDS =-20V, VGS =0, Tj =25C - -0.1 -1 VDS =-20V, VGS =0, Tj =150C - -10 -100 IGSS - -10 -100 nA RDS(on) - 94 110 m RDS(on) - 54 67 Gate-source leakage current VGS =-12V, VDS =0 Drain-source on-state resistance VGS =-2.5V, ID =-3.7A Drain-source on-state resistance VGS =-4.5, ID =-4.7A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air; t 5 sec. Page 2 2012-03-14 BSL211SP Rev 1.2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 6.2 12.4 - S pF Dynamic Characteristics Transconductance gfs cVDS c2*cIDc*RDS(on)max ID =-3.8A Input capacitance Ciss VGS =0, VDS =-15V, - 654 - Output capacitance Coss f=1MHz - 241 - Reverse transfer capacitance Crss - 197 - Turn-on delay time td(on) VDD =-10V, VGS =-4.5V, - 8.7 13 Rise time tr ID =-1A, RG=6 - 13.9 21 Turn-off delay time td(off) - 25 37.3 Fall time tf - 23.3 35 - -1.3 -2 - -4.7 -7 - -8.3 -12.4 V(plateau) VDD =-10V, ID =-4.7A - -2 - V IS - - -2 A - - -18.8 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-10V, ID =-4.7A VDD =-10V, ID =-4.7A, nC VGS =0 to -4.5V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0, |IF | = |ID | - -0.94 -1.4 V Reverse recovery time trr VR =-10V, |IF | = |lD |, - 20.6 25.8 ns Reverse recovery charge Qrr diF /dt=100A/s - 6.3 7.9 nC Page 3 2012-03-14 BSL211SP Rev 1.2 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS | 4.5 V 2.2 BSL211SP -5.5 A 1.8 -4.5 1.6 -4 1.4 -3.5 ID Ptot W BSL211SP 1.2 -3 1 -2.5 0.8 -2 0.6 -1.5 0.4 -1 0.2 -0.5 0 0 20 40 60 80 100 120 C 0 0 160 20 40 60 80 100 120 TA 160 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJS = f (tp ) parameter : D = 0 , TA = 25 C parameter : D = tp /T -10 C 2 BSL211SP 10 2 BSL211SP K/W A /I D -10 1 RD o S( tp = 41.0s n) 10 1 100 s Z thJS = V DS ID 1 ms 10 ms -10 0 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 -10 -1 single pulse DC 0.02 10 -3 -10 -2 -1 -10 -10 0 -10 1 V -10 2 VDS 10 -4 -7 10 0.01 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2012-03-14 BSL211SP Rev 1.2 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25C RDS(on) = f (ID ) parameter: tp = 80 s parameter: VGS 30 0.2 Vgs = -3.5V Vgs = -2.3V Vgs = -3V Vgs = -2.5V Vgs = -4V Vgs = -4.5V Vgs = -5.5V Vgs = -7V 20 RDS(on) - ID A Vgs = -3V 15 Vgs = -3.5V Vgs = - 4V Vgs = - 4.5V Vgs= - 5.5V Vgs = - 7V 0.15 0.125 0.1 0.075 Vgs = -2.5V 10 0.05 Vgs = -2.3V 5 0.025 Vgs = -2V 0 0 1 2 3 4 5 6 7 8 V 0 0 10 5 10 15 A 20 - V DS 8 Typ. forward transconductance ID= f ( VGS ); |VDS | 2 x|ID | x RDS(on)max gfs = f(ID); Tj=25C parameter: tp = 80 s parameter: tp = 80 s 32 24 A S 24 18 g fs - ID 7 Typ. transfer characteristics 20 15 16 12 12 9 8 6 4 3 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 V 30 - ID 3.6 - V GS 0 0 4 8 12 16 20 24 A 32 - ID Page 5 2012-03-14 BSL211SP Rev 1.2 9 Drain-source on-resistance 10 Gate threshold voltage RDS(on) = f(Tj ) VGS(th) = f (Tj) parameter: ID = -4.7 A, VGS = -4.5 V parameter: VGS = VDS , ID = -25 A 90 1.4 V - VGS(th) RDS(on) m 70 98% 1 0.8 98% typ. 0.6 60 2% 0.4 typ. 50 0.2 40 -60 -20 20 60 100 C 0 -60 160 -20 20 60 100 Tj C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0, f=1 MHz parameter: Tj , tp = 80 s 10 3 -10 2 BSL211SP A Ciss C IF -10 1 pF Coss -10 0 Tj = 25 C typ Crss Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 2 0 5 10 V 20 - VDS -10 -1 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2012-03-14 BSL211SP Rev 1.2 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ), par.: ID = -4.7 A |VGS| = f (QGate ) VDD = -10 V, RGS = 25 parameter: ID = -4.7 A pulsed 30 12 V mJ 10 - VGS E AS 9 20 8 7 15 0.2 VDS max. 0.5 VDS max. 0.8 VDS max. 6 5 10 4 3 5 2 1 0 25 50 75 100 C 150 Tj 0 0 2 4 6 8 10 12 14 nC 18 |QGate| 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -24.5 BSL211SP V V (BR)DSS -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 -20 20 60 100 C 180 Tj Page 7 2012-03-14 BSL211SP BSS308P Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. 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