SIEMENS BDP 952 PNP Silicon AF Power Transistor * For AF drivers and output stages High collector current High current gain Low collector-emitter saturation voltage Complementary type: BDP951...BDP955 (NPN) YPSO5163 Type Marking |Ordering Code Pin Configuration Package BDP 952 BDP 952 |Q62702-D1340 1=B |2=C |S=E |4=C |SOT-223 BDP 954 BDP 954 |Q62702-01342 1=B |2=C |3=E |4=C |SOT-223 BDP 956 BDP 956 |Q62702-D1344 1=B j2=C /3=E |4=C |SOT-223 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VoEO Vv BDP 952 80 BDP 954 100 BDP 956 120 Collector-base voltage Voso BDP 952 100 BOP 954 120 BDP 956 140 Emitter-base voltage Veso 5 DC collector current Io 3 A Peak collector current lom 5 Base current la 200 mA Peak base current pu 500 Total power dissipation, Tg = 99C Prot Ww Junction temperature Fy 150 C Storage temperature Testg - 65... + 150 Thermal Resistance Junction ambient =} Rina < 42 K/W Junction - soldering point Ans $17 1) Package mounted on pcb 40mm x 40mm x 1.5mm / Gem? Cu Semiconductor Group 919 11.96 SIEMENS BDP 952 Electrical Characteristics at T,=25C, unless otherwise specified Parameter Symbol Values Unit min. [typ. |max. DC Characteristics Collector-emitter breakdown voltage lo=10mA, lg=OmA, BDP 952 Ig = 10 mA, /g=OmA, BDP 954 fo = 10 mA, fg=OmA, BDP 956 Vipryceo 80 100 120 Collector-base breakdown voltage Ilo =100 pA, Ip =0,BDP 952 Io = 100 PA, Ip =0,BDP 954 lo = 100 pA, ig =0,BDP 956 Vieryceo 100 120 140 Base-emitter breakdown voltage le = 10 pA, Ip = 9 ViBR)EBO Collector cutoff current Vog = 100 V, Ie =0, Tg = 25C Vop = 100 V, = 0, Ta= 150C Icpo 100 20 nA HA Emitter cutoff current Vep =4V, ic =0 leBo 100 nA DC current gain Io =10 MA, Vog =5V Ig = 500 MA, Voge =1V Io =2A, Vop=2V ee 25 40 15 475 Collector-emitter saturation voltage 1) Ilo =2A, Ig=0.2A Veesat 0.8 Base-emitter saturation voltage 1) Ig =2A,lg=O0.2A Veesat 1.5 AC Characteristics Transition frequency Ig = 50 mA, Vog = 10 V, f= 100 MHz fr 100 MHz Collector-base capacitance Vog = 10 V, f= 1 MHz Cob 40 pF 1) Pulse test: t < 300ps; D < 2% Semiconductor Group 920 11.96 SIEMENS BDP 962 Total power dissipation P,.; = f (T,*; Ts) Permissible Pulse Load Ainis = {) * Package mounted on epoxy 3.2 Ww 24 2.0 1.6 1.2 08 04 Ho TT 0.0 10 nH TI 0 2 40 60 80 100 120 C 150 107% jo* 10 m Tyg . , Permissible Pulse Load Promax / Protoc = Xt) DC current gain fre = f (ic) Voge = 2V SS | is a a H] Mi 10! SRC NTT th Semiconductor Group 921 11.96 SIEMENS BDP 952 Collector cutoff current logo = f(Ta) Collector-emitter saturation voltage Vep = 45V Io =t (Vcesat), Mre = 10 108 104 nA mA 10 ego 49 4 10 101 40+ 10 10-1 10 0 20 40 60 80 100 120 C 150 00 Of 02 03 04 05 O06 V O08 > i > Veer Base-emitier saturation voltage Collector current ic = f (Vac) Ic =f (Vpesat), Ope = 10 Voe = 2V 0.0 0.2 04 0.6 0.8 10 Vo 13 Versa Semiconductor Group 922 11.96