SEMICONDUCTOR TECHNICAL DATA KID65001AP/AF~ KID65004AP/AF BIPOLAR LINEAR INTEGRATED CIRCUIT 7 CIRCUIT DARLINGTON TRANSISTOR ARRAY FEATURES *Output Current : 500mA Max. *High Sustaining Voltage Outputs : 50V Min. *Output Clamp Diodes. *Inputs Compatible With Various Types of Logic. *PKG Type AP : DIP-16Pin, DIP-16Pin(1) AF : FLP-16Pin TYPE INPUT RESISTOR DESIGNATION KID65001AP/AF No (External) General Purpose KID65002AP/AF Zener Diode 7V+10.5k 1425V P-MOS KID65003AP/AF 2.7k TTL, 5V C-MOS KID65004AP/AF 10.5k 615V P-MOS, C-MOS DESCRIPTION: The KID65001AP/AF Series are high-voltage, high-current darlington transistor array comprised of seven NPN darlington pairs. All units feature internal clamp diodes for switching inductive loads. MAXIMUM RATINGS (Ta=25, unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT VCE(SUS) 50 V Output Current IOUT 500 mA/ch Input Voltage IIN 1) -0.5+30 V Input Current IIN 2) 25 mA Output Sustaining Voltage Clamp Reverse Voltage VR 50 V Diode Forward Current IF 500 mA IGND 2.8 A 1.47 W 0.54 / 0.63 3)/1.25 4) W GND Terminal Current AP PD Power Dissipation AF Operating Temperature Topr -4085 Storage Temperature Tstg -55150 1) Except KID65001AP/AF 2) Only KID65001AP/AF 3) On PCB(30x30x1.6mm, Cu 50%) 4) On PCB (Test Board : JEDEC 2s2p) 2012. 1. 9 Revision No : 11 1/7 KID65001AP/AF~KID65004AP/AF 2012. 1. 9 Revision No : 11 2/7 KID65001AP/AF~KID65004AP/AF RECOMMENDED OPERATING CONDITIONS (Ta=-4085) CHARACTERISTIC SYMBOL CONDITION VCE(SUS) Output Sustaining Voltage MIN. TYP. MAX. UNIT V 0 - 50 IOUT (AP, Ta=85) TPW=25ms, DF=10%, 7 Circuits 0 - 370 TPW=25ms, DF=30%, 7 Circuits 0 - 200 IOUT (AF, Ta=85) TPW=25ms, DF=10%, 7 Circuits - - 290 TPW=25ms, DF=30%, 7 Circuits - - 150 30 V Output Current mA mA Input Voltage VIN Except KID65001AP/AF 0 - Input Current IIN Only KID65001AP/AF 0 - 5 mA Clamp Diode Reverse Voltage VR - - 50 V Clamp Diode Forward Current IF - - 400 mA Ta=85 - - 0.76 Ta=85 0.28 / 0.32* / 0.65** AP PD Power Dissipation AF W * On PCB (30x30x1.6mm, Cu 50%) ** On PCB (Test Board : JEDEC 2s2p) ELECTRICAL CHARACTERISTICS (Ta=25, unless otherwise noted) CHARACTERISTICS Output Leak Current SYMBOL KID65002AP/AF ICEX TEST CIRCUIT 1 KID65004AP/AF Collector-Emitter Saturation Voltage VCE(sat) 2 KID65002AP/AF KID65003AP/AF Input Current IIN(ON) 3 KID65004AP/AF IIN(OFF) 4 KID65002AP/AF KID65003AP/AF VIN(ON) Input Voltage 5 KID65004AP/AF TEST CONDITION MIN. TYP. VCE=50V, Ta=25 - - 50 VCE=50V, Ta=85 VCE=50V, VIN=6V - - 100 - - 500 VCE=50V, VIN=1V - - 500 IOUT=350mA, IIN=500A - 1.3 1.6 IOUT=200mA, IIN=350A - 1.1 1.3 IOUT=100mA, IIN=250A VIN=17V - 0.9 1.1 - 0.82 1.25 VIN=3.85V - 0.93 1.35 VIN=5V - 0.35 0.5 VIN=12V - 1.0 1.45 IOUT=500A, Ta=85 VCE=2V, IOUT=300mA 50 65 - - - 13 VCE=2V, IOUT=200mA - - 2.4 VCE=2V, IOUT=250mA - - 2.7 VCE=2V, IOUT=300mA - - 3.0 VCE=2V, IOUT=125mA - - 5.0 VCE=2V, IOUT=200mA - - 6.0 VCE=2V, IOUT=275mA - - 7.0 VCE=2V, IOUT=350mA KID65002AP/AF KID65003AP/AF VIN(OFF) KID65004AP/AF DC Current Transfer Ratio hFE 2 Clamp Diode Reverse Current IR 6 Clamp Diode Forward Voltage VF 7 Input Capacitance CIN Turn-ON Delay tON Turn-OFF Delay tOFF 2012. 1. 9 Revision No : 11 8 MAX. - - 8.0 - 0 - 7.4 - 0 - 0.7 VCE=2V, IOUT=350mA UNIT A V mA A V 0 - 1.0 1000 - - VR=50V, Ta=25 - - 50 VR=50V, Ta=85 IF=350mA - - 100 - - 2.0 V - 15 - pF - 0.1 - - 0.2 - VOUT=50V, RL=163 A s 3/7 KID65001AP/AF~KID65004AP/AF 2012. 1. 9 Revision No : 11 4/7 KID65001AP/AF~KID65004AP/AF Notes : 1. Pulse Width 50s, Duty Cycle 10% Output Impedance 50, tr5ns, tf10ns 2. See below Input Conditions Type Number RI VIH KID65001AP/AF 2.7k 3V KID65002AP/AF 0 13V KID65003AP/AF 0 3V KID65004AP/AF 0 8V 3. CL includes probe and Jig capacitance. 2012. 1. 9 Revision No : 11 5/7 KID65001AP/AF~KID65004AP/AF 2012. 1. 9 Revision No : 11 6/7 KID65001AP/AF~KID65004AP/AF 2012. 1. 9 Revision No : 11 7/7