ZXMN4A06G
Document number: DS33545 Rev. 5 - 2
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ZXMN4A06G
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D
S
G
40V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON)
ID
TA = +25°C
40V
0.05Ω @ VGS = 10V
7A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Audio Output Stages
Relay and Solenoid Driving
Motor Control
Features
Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (ZXMN4A06GQ)
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Ordering Information (Note 4)
Part Number
Compliance
Case
Packaging
ZXMN4A06GTA
Standard
SOT223
1,000/Tape & Reel
ZXMN4A06GTC
Standard
SOT223
4,000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
Equivalent Circuit
Top View
SOT223
Pin Out - Top View
e3
Green
ZXMN4A06 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 6 = 2016)
WW or WW = Week Code (01 to 53)
ZXMN
4A06
YWW
ZXMN4A06G
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
40
V
Gate-Source Voltage
VGS
20
V
Continuous Drain Current
VGS = 10V
(Note 6)
ID
7
A
TA = +70°C (Note 6)
5.6
(Note 5)
5
Pulsed Drain Current
VGS= 10V
(Note 7)
IDM
22
A
Continuous Source Current (Body Diode)
(Note 6)
IS
5.4
A
Pulsed Source Current (Body Diode)
(Note 7)
ISM
22
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Note 5)
PD
2
16
W
mW/°C
(Note 6)
3.9
31
Thermal Resistance, Junction to Ambient
(Note 7)
RθJA
62.5
°C/W
(Note 6)
32.2
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes: 5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR-4 PCB measured at t ≦ 5 seconds.
7. Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.05, pulse width 10μs - pulse width limited by maximum junction temperature.
Thermal Characteristics
ZXMN4A06G
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
40
V
ID = 250µA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
1
µA
VDS = 40V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
1
2
V
ID = 250A, VDS = VGS
Static Drain-Source On-Resistance (Note 8)
RDS(ON)
0.05
Ω
VGS = 10V, ID = 4.5A
0.075
VGS = 4.5V, ID = 3.2A
Forward Transconductance
gfs
8.7
S
VDS = 15V, ID = 2.5A
Diode Forward Voltage (Note 8)
VSD
0.8
0.95
V
IS = 2.5A, VGS = 0V, TJ = +25°C
Reverse Recovery Time (Note 9)
tRR
19.86
ns
IF = 2.5A, di/dt = 100A/µs,
TJ = +25°C
Reverse Recovery Charge (Note 9)
QRR
16.36
nC
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
770
pF
VDS = 40V, VGS = 0V
f = 1MHz
Output Capacitance
Coss
92
pF
Reverse Transfer Capacitance
Crss
61
pF
Total Gate Charge
Qg
18.2
nC
VDS = 30V, VGS = 10V,
ID = 2.5A (Refer to test circuit)
Gate-Source Charge
Qgs
2.1
nC
Gate-Drain Charge
Qgd
4.5
nC
Turn-On Delay Time
tD(ON)
2.55
ns
VDD = 30V, VGS = 10V
ID = 2.5A, RG 6Ω
(Refer to test circuit)
Turn-On Rise Time
tr
4.45
ns
Turn-Off Delay Time
tD(OFF)
28.61
ns
Turn-Off Fall Time
tf
7.35
ns
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
ZXMN4A06G
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Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
A1
A
7°
7°
D
b
e
e1
b1
C
E1
L
0° -10°
Q
E
0.25
Seating
Plane
Gauge
Plane
SOT223
Dim
Min
Max
Typ
A
1.55
1.65
1.60
A1
0.010
0.15
0.05
b
0.60
0.80
0.70
b1
2.90
3.10
3.00
C
0.20
0.30
0.25
D
6.45
6.55
6.50
E
3.45
3.55
3.50
E1
6.90
7.10
7.00
e
-
-
4.60
e1
-
-
2.30
L
0.85
1.05
0.95
Q
0.84
0.94
0.89
All Dimensions in mm
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
X1
Y1
Y
XC
C1 Y2
ZXMN4A06G
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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failure of the life support device or to affect its safety or effectiveness.
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