ZXMN4A06G Green 40V N-CHANNEL ENHANCEMENT MODE MOSFET BVDSS RDS(ON) 40V 0.05 @ VGS = 10V Features ID TA = +25C 7A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance Fast Switching Speed Low Threshold Low Gate Drive Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (ZXMN4A06GQ) Applications Mechanical Data DC-DC Converters Audio Output Stages Relay and Solenoid Driving Motor Control Case: SOT223 Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e3 Weight: 0.112 grams (Approximate) SOT223 D G S Equivalent Circuit Pin Out - Top View Top View Ordering Information (Note 4) Part Number ZXMN4A06GTA ZXMN4A06GTC Notes: Compliance Standard Standard Case SOT223 SOT223 Packaging 1,000/Tape & Reel 4,000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT223 ZXMN 4A06 ZXMN4A06G Document number: DS33545 Rev. 5 - 2 YWW ADVANCED INFORMATION Product Summary ZXMN4A06 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 6 = 2016) WW or WW = Week Code (01 to 53) 1 of 7 www.diodes.com April 2016 (c) Diodes Incorporated ZXMN4A06G Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGS Drain-Source Voltage Gate-Source Voltage ADVANCED INFORMATION Continuous Drain Current VGS = 10V Pulsed Drain Current VGS= 10V Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (Note 6) TA = +70C (Note 6) (Note 5) (Note 7) (Note 6) (Note 7) ID IDM IS ISM Value 40 20 7 5.6 5 22 5.4 22 Unit V V Value 2 16 3.9 31 62.5 32.2 -55 to +150 Unit A A A A Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: Symbol (Note 5) PD (Note 6) (Note 7) (Note 6) RJA TJ, TSTG W mW/C C/W C 5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR-4 PCB measured at t 5 seconds. 7. Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Thermal Characteristics ZXMN4A06G Document number: DS33545 Rev. 5 - 2 2 of 7 www.diodes.com April 2016 (c) Diodes Incorporated ZXMN4A06G Electrical Characteristics (@TA = +25C, unless otherwise specified.) ADVANCED INFORMATION Characteristic OFF CHARACTERISTICS (Note 8) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 40 V ID = 250A, VGS = 0V Zero Gate Voltage Drain Current IDSS 1 A VDS = 40V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V Gate Threshold Voltage VGS(TH) 1 2 V ID = 250A, VDS = VGS Static Drain-Source On-Resistance (Note 8) RDS(ON) gfs 8.7 S VDS = 15V, ID = 2.5A Diode Forward Voltage (Note 8) VSD 0.8 0.95 V IS = 2.5A, VGS = 0V, TJ = +25C Reverse Recovery Time (Note 9) tRR 19.86 ns Reverse Recovery Charge (Note 9) QRR 16.36 nC IF = 2.5A, di/dt = 100A/s, TJ = +25C Input Capacitance Ciss 770 pF Output Capacitance Coss 92 pF Reverse Transfer Capacitance Crss 61 pF Total Gate Charge Qg 18.2 nC Gate-Source Charge Qgs 2.1 nC ON CHARACTERISTICS Forward Transconductance 0.05 0.075 VGS = 10V, ID = 4.5A VGS = 4.5V, ID = 3.2A DYNAMIC CHARACTERISTICS (Note 9) Qgd 4.5 nC Turn-On Delay Time tD(ON) 2.55 ns Turn-On Rise Time tr 4.45 ns Turn-Off Delay Time tD(OFF) 28.61 ns tf 7.35 ns Gate-Drain Charge Turn-Off Fall Time Notes: VDS = 40V, VGS = 0V f = 1MHz VDS = 30V, VGS = 10V, ID = 2.5A (Refer to test circuit) VDD = 30V, VGS = 10V ID = 2.5A, RG 6 (Refer to test circuit) 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. ZXMN4A06G Document number: DS33545 Rev. 5 - 2 3 of 7 www.diodes.com April 2016 (c) Diodes Incorporated ZXMN4A06G ADVANCED INFORMATION Typical Characteristics ZXMN4A06G Document number: DS33545 Rev. 5 - 2 4 of 7 www.diodes.com April 2016 (c) Diodes Incorporated ZXMN4A06G ADVANCED INFORMATION Typical Characteristics (Cont.) ZXMN4A06G Document number: DS33545 Rev. 5 - 2 5 of 7 www.diodes.com April 2016 (c) Diodes Incorporated ZXMN4A06G Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. D Q C E E1 Gauge Plane 0.25 Seating Plane e1 L b 0 e A A1 0 -1 SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm 7 7 ADVANCED INFORMATION b1 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X1 Y1 C1 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y2 Y X ZXMN4A06G Document number: DS33545 Rev. 5 - 2 C 6 of 7 www.diodes.com April 2016 (c) Diodes Incorporated ZXMN4A06G IMPORTANT NOTICE ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2016, Diodes Incorporated www.diodes.com ZXMN4A06G Document number: DS33545 Rev. 5 - 2 7 of 7 www.diodes.com April 2016 (c) Diodes Incorporated