Philips Semiconductors Product specification Schottky barrier (double) diodes BAS70 series FEATURES Low forward current High breakdown voltage Guard ring protected Small SMD package e Low diode capacitance. APPLICATIONS e Ultra high-speed switching Voltage clamping e Protection circuits. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection. Single diodes and doubie diodes with different pinning are available. PINNING SOT23 (see Fig.1a) PIN DESCRIPTION BAS70 (see Fig. 1b) BAS70-04 (see Fig.1c) BAS70-05 (see Fig.1d) BAS70-06 (see Fig.1e) ay ay a4 n.c, ke a2 ky ki, ag ki, ko Top view 2 MGCAE2 a. Simplified outline SOT23. c. BAS70-04 2 The diodes BAS70, BAS70-04, Mee BAS70-05 and BAS70-06 are d. BAS70-05. encapsulated in a SOT23 small plastic SMD package. The BAS70-07 3 3 is encapsulated in a SOT143 small plastic SMD package. ' ty. 2 ' > nc, MGC883 MGC4E MARKING b. BAS70 single diode. e. BAS70-06. MARKING TYPE NUMBER CODE . a . BAS70 7p Fig.1 Simplified outline (SOT23) and symbols. BAS70-04 74p BAS70-05 75p BAS70-06 76p BAS70-07 77p 4 37 4 3 PINNING SOT143 (see Fig.2) vy oa os PIN _| DESCRIPTION 1 2 BAS70-07 1 2["| 1 ki Tap view MAMI94 2 Ko 3 a 4 7 Fig.2 Simplified outline (SOT143) BAS70-07 and symbol. 1 1996 Oct 01 2-23 Philips Semiconductors Product specification Schottky barrier (double) diodes BAS70O series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS [ omin, [| max. | unit Per diode Vr continuous reverse voltage ~ 70 Vv Ir continuous forward current -_ 70 mA leam repetitive peak forward current t<s1s,8<05 ~ 70 mA lesm non-repetitive peak forward current tp < 10 ms ~ 100 mA Tstg storage temperature ~65 +150 C Tj junction temperature ~ 150 C Tamb operating ambient temperature -65 +150 c ELECTRICAL CHARACTERISTICS Tamp = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS | MAX. | UNIT Per diode Ve forward voltage see Fig.3 le=1mA 410 mV Ir = 10 mA 750 mV ip = 15 mA 1 Vv In reverse current Vr = 50 V; note 1; see Fig.4 100 nA Va = 70 V; note 1; see Fig.4 10 uA Tt charge carrier life time (Krakauer lF=5mA 100 ps method) Cq diode capacitance f= 1 MHz; Vp = 0 V; see Fig.6 2 pF Note 1. Pulsed test: tp = 300 ps; 5 = 0.02. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE | UNIT Pith j-a thermal resistance from junction to ambient | note 1 500 KAN Note 1. Refer to SOT23 or SOT143 standard mounting conditions. 1996 Oct 01 Philips Semiconductors Product specification Schottky barrier (double) diodes -BAS70.series GRAPHICAL DATA 10? ; 102 IF R (pA) ima) 10 10 1 1 10-1 1071 10? 10? 1073 0 0.2 04 0.6 0.8 1 60 80 Ve (V) Vay) (1) Tame = 125C. (2) Tama = 85 C. (1) Tame = 150C. (3) Tamp = 25 C. (2) Tamb = 85 C. (4) Tam = ~40C. (3) Tamb = 25C. Fig.3 Forward current as a function of forward voltage; typical values. Fig.4 Reverse current.as a function of reverse voltage; typical-values. 107! 1 10 2 Ip(may 1 f = 10 kHz. Fig.5 Differential forward resistance as a function of forward current; typical values. (pF) 16 0.5 10 8 Vat) f=1 MHz. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 1996 Oct 01