A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 OCNONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCEO IC = 5.0 mA 30 V
BVCER IC = 5.0 mA RBE = 10 Ω55 V
BVEBO IC = 100 µA3.5 V
ICEX VCE = 55 V VBE = -1.5 V
VCE = 30 V VBE = -1.5 V TC = 200 OC100
500 µ
µµ
µA
ICEO VCE = 28 V 20 µ
µµ
µA
IEBO VEB = 3.5 V 100 µ
µµ
µA
hFE VCE = 5.0 V IC = 50 mA
IC = 360 mA 25
5.0 200 ---
VCE(SAT) IC = 100 mA IB = 20 mA 1.0 V
ftVCE = 15 V IC = 50 mA f = 200 MHz 800 MHz
COB VCB = 28 V f = 1.0 MHz 3.0 pF
GPE
η
ηη
ηc
VCC = 28 V Pout = 1.0 W f = 400 MHz 10
45 dB
%
NPN SILICON HIGH FREQUENCY TRANSISTOR
2N3866A
DESCRIPTION:
The 2N3866A is a High Freq uency
Transist or Designed for Amplifier and
Oscillator Applications.
MAXIMUM RATINGS
IC400 mA
VCE 30 V
PDISS 5.0 W @ T C = 25 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +200 OC
θ
θθ
θJC 35 OC/W
PACKAGE STYLE TO-39
1 = Emitter 2 = Base
3 = Collector
