2n998 (siticon) = SOLID STATE INC. =) 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com NPN SILICON ANNULAR DARLINGTON TRANSISTORS . containing two NPN silicon annular transistors in a darlington connection, and designed for applications requiring: @ High OC Current Gain hee = 2000 (Min) @ Ic = 100 mAdc @ Guaranteed DC Current Gain from 1.0 mAdc to 100 mAdc @ Low Noise Figure NF = 6.0 dB (Max) @ Ic = 0.1 mAdc @ Low Leakage Current ICBO = 0.01 uAdc (Max) @ Vcp = 90 Vde lEBO = 0.01 wAdc (Max) @ Vee = 10 Vde NPN SILICON DARLINGTON TRANSISTORS *MAXIMUM RATINGS( Numerical subscripts refer to unit number.) The input unit is identified as Unit 1 regard- Rating Symbol Value Unit less of terminal numbering. Collector-Emitter Voltage VCEO 60 Vde (Base 1 and Base 2 open} Collector-Base Voltage Vos 100 Vdc Pp Am Emitter-Base Voltage VeB 15 Vde {8 Collector Current Continuous le 500 mAdc E | Pp t Total Power Dissipation @ Ta = 25C Pp 0.5 Watt i | + Derate above 25C 2.86 mw/c TNT 77 ' ' Total Power Dissipation @ Tc = 25C Po 1.8 Watts F 4 K Derate above 25C 10.3 mWw/oc SEATING NE Operating and Storage Junction Ty.Tstg | -65 to +200 c sve : Temperature Range PINT. EMITTER 2 Lb t *tndicates JEDEC Registered Data 5 pa ccroa nN 4. EMITTER I BASE 2 ALL JEDEC dimensions and notes apply TO.722N998 (continued) ELECTRICAL CHARACTERISTICS 7, = 25C unters othervisa noted) Characteristic Symbol Min Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (Ic = 30 mAdc, Ip = 0) BYCEO(sus) 60 Vde Collector-Base Breakdown Voltage (Ig = 100 pAde, Ip = 0) BYcRo 100 Vde Emitter-Base Breakdown Voltage (ig = 100 Ade, Io = 0) BVERO Vde Collector Cutoff Current (Vop = 90 Vdc, Ip = 0) (Vop = 90 Vde, Ip = 0, T, = 150C) oBO 0.01 15 wAdc Emitter Cutoff Current (Vpp = 10 Vdc, Ico = 9) lEBO 0.01 wu Adc ON CHARACTERISTICS DC Current Gain (1) (Ig = 1 mAdc, Vor = 5 Vde) (I = 10 mAdc, Voge * 5 Vdc) lg = 100 mAdc, Vor = 5 Vdc) (Io = 10 mAdc, Vcr = 5 Vdc, measured across each transistor within the device} Dre 800 1,600 2,000 25 8,000 DYNAMIC CHARACTERISTICS Output Capacitance (Vop = 10 Vdc, Ip = 0,= 100 kHz) ob 30 pF Input Capacitance (Vpg = 0.5 Vde, Ie = 0, f = 100 kHz) Cip 50 pF Small-Signal Current Gain (I = t mAdc, Veg = 5 Vde, = 1 kHz) 1,000 Noise Figure** { = 1 kHz, Bandwidth = 200 Hz) (ig = 0.1 mAdec, Veg = 10 Vdc, Rg = 5 kohms, NFe* aB * Indicates JEDEC Registered Data (1) pulse Test: Pulse Width = 300 ua, Duty Cycle * 2.0% **Measured with constant current supply of 20 j:Ade connected to the emitter of the input transistor. (See Figure 1)