DSA 90 C 200HB preliminary V RRM = 200 V I FAV = 2x 45 A V F = 0.86 V Schottky High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode 1 Part number 2 3 DSA 90 C 200HB Backside: cathode Features / Advantages: Applications: Package: Very low Vf Extremely low switching losses Low Irm-values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Industry standard outline Epoxy meets UL 94V-0 RoHS compliant TO-247AD Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF Conditions forward voltage min. Unit 25 C 200 V VR = 200 V TVJ = 25 C 1.8 mA VR = 200 V TVJ = 125 C 5 mA I F = 45 A I F = 90 A TVJ = 25 C 0.96 1.18 V V I F = 45 A I F = 90 A T VJ = 125 C 0.86 1.14 V V rectangular, d = 0.5 T C = 150 C 45 A T VJ = 175 C 0.52 6.5 V m 0.55 K/W 175 C 25 C 275 W 450 A average forward current VF0 rF threshold voltage slope resistance R thJC thermal resistance junction to case TVJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current t p = 10 ms (50 Hz), sine TVJ = 45 C CJ junction capacitance VR = 100 V; f = 1 MHz TVJ = 25 C EAS non-repetitive avalanche energy I AS = tbd A; L = 100 H T VJ = 25 C I AR repetitive avalanche current VA = 1.5*VR typ.; f = 10 kHz (c) 2007 IXYS all rights reserved max. TVJ = I FAV for power loss calculation only IXYS reserves the right to change limits, conditions and dimensi typ. -55 TC = Data according to IEC 60747and per diode unless otherwise specified 115 pF tbd mJ tbd A 20070703a DSA 90 C 200HB preliminary Ratings Symbol Definition Conditions I RMS RMS current per pin* RthCH thermal resistance case to heatsink MD mounting torque FC mounting force with clip T stg storage temperature min. typ. max. Unit 70 A 0.25 K/W 0.8 1.2 Nm 20 120 N -55 150 C Weight 6 g * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-247AD Symbol A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 OP1 IXYS reserves the right to change limits, conditions and dimensi (c) 2007 IXYS all rights reserved Inches min max 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.291 Data according to IEC 60747and per diode unless otherwise specified Millimeters min max 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 20070703a DSA 90 C 200HB preliminary 100 1000 10.000 TVJ = 150C 1.000 10 TVJ = 150C 125C 25C 1 0.2 0.4 0.6 0.100 100C 100 75C 50C 0.8 1.0 VF [V] 1.2 0.001 1.4 25C 0 40 80 120 VR [V] 160 200 10 Fig. 2 Typ. reverse current IR versus reverse voltage VR 100 100 90 90 0 50 100 VR [V] 150 200 Fig. 3 Typ. junction capacitance CT versus reverse voltage VR 80 80 DC 70 70 d = 0.5 60 P(AV) [W] IF(AV) [A] TVJ= 25C 0.010 Fig. 1 Maximum forward voltage drop characteristics 50 40 60 40 30 20 20 10 10 0 0 40 80 120 TC [C] 160 d= DC 0.5 0.33 0.25 0.17 0.08 50 30 0 CT [pF] IR [mA] IF [A] 125C 0 10 20 30 40 50 60 70 80 90 IF(AV) [A] Fig. 4 Avg: forward current IF(AV) versus case temperature TC Fig. 5 Forward power loss characteristics 1 ZthJC [K/W] D = 0.5 0.33 0.25 Single Pulse 0.17 0.08 0.1 DSA90C200HB 0.001 0.01 0.1 1 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles (c) 2006 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 0629 IXYS reserves the right to change limits, conditions and dimensi 20070703a