IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE(sat) tfi(typ) = 1700 V = 75 A = 3.3 V = 290 ns Preliminary Data Sheet\ Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C; RGE = 1 M 1700 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 75 A IC90 TC = 90C 32 A ICM TC = 25C, 1 ms 200 A SSOA (RBSOA) VGE = 15 V, TVJ = 125C, RG = 5 Clamped inductive load tSC TJ = 125C, VCE = 1200 V; VGE = 15 V, RG = 10 10 PC TC = 25C 350 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 22...130/5...30 N/lb ICM = 90 @ 0.8 VCES TJ FC Mounting force with chip Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight C 6 Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = 0.8 * VCES VGE = 0 V IGES VCE = 0 V, VGE = 20 V VCE(sat) IC (c) 2004 IXYS All rights reserved (TAB) C G = Gate, E = Emitter, E C = Collector, TAB = Collector g Features z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. = 1mA, VGE = 0 V = 250 A, VCE = VGE = IC90, VGE = 15 V G A s 300 PLUS247 (IXGX) 1700 3.0 Note 1 TJ = 25C TJ = 125C TJ = 25C TJ = 125C 2.5 3.0 5.0 V V 500 8 A mA 100 nA 3.3 V V DS99071A(08/04) IXGX Symbol Test Conditions gfs IC = IC25; VCE = 10 V Note 2 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 33 S 3500 pF 250 pF 40 pF 155 nC 30 nC 51 nC 45 ns Cres Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25C tri IC = IC90, VGE = 15 V td(off) RG = 2.7 , VCE = 0.8 VCES Note 3 tfi 38 500 ns 250 500 ns 15 25 mJ td(on) Inductive load, TJ = 125C 48 ns tri IC = IC90, VGE = 15 V 42 ns Eon td(off) RG = 2.7 , VCE = 0.8 VCES Note 3 6.0 360 mJ ns tfi 560 ns Eoff 22 mJ 0.15 0.35 K/W K/W RthJC RthCK Reverse Diode (FRED) (Note 4) PLUS247 Outline (IXGX) ns 270 Eoff 32N170H1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = 50A, VGE = 0 V, Pulse test, t 300 s, duty cycle d 2 % IRM t rr IF = 50A, VGE = 0 V, -diF/dt = 800 A/s VR = 600 V 2.7 50 150 RthJC V A ns 0.4 K/W Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t 300 s, duty cycle 2 % 3. Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG. 4. See DH60-18A and IXGH32N170A datasheets for additional characteristics IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692