Single Diode Super Fast Recovery Diode DE EAU8 MS) OUTLINE Package : ITO-220 Unit!mm Weight 2.19g (Typ) Bryhails (Bi) 10 46 200V 4A Date code PILES (oll) Za Control No O eR/I1IX @ Low Noise me PQQ Oo <0 e trr=35ns trr=35ns Type No. 0107 = eJILE-IVDE @ Full Molded fe: 'D4L20U Pe ~ i 4+ olarity | Gs "th H eA vYFYIBER Switching Regulator . e751 nh)L Fly Wheel 7 REE. OA, BABA Home Appliance, Office Automation, Lighting 38(E.FA Communication, Factory Automation DOS O Mewe RATINGS IIB CIS ALIC Web 44 b RIL YF A FAY AT FRAN BD) EBHA PE SVs, HEUER IC OUT ILFREIL BR CHERR FS V0 For details of the outline dimensions, refer to our web site or the diode technical data book. As for the marking, refer to the specification "Marking, Terminal Connection". @fextmATH Absolute Maximum Ratings GkO2 A Te =25T) a Odd ny | A fe Ha 2% Hie a . Item Symbol] Conditions Type No. Sa Unit CARL yA 9 Storage Temperature Tstg 40~150 C Bea AME : 9 Operation Junction Temperature T) 150 C vt A BEL AE Maximum Reverse Voltage Vem 200 Vv HD eae I 50Hz EK, MA, Teo=130C, 74 vfs 4 A Average Rectified Forward Current 0 50Hz sine wave, Resistance load, Tc=130C, With heatsink EAR FE nt Te 50Hz EGU, JER O KLINT 7 VE AE, Tj = 25C 60 A Peak Surge Forward Current FSM | 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25C i TSE. . int: 7 AR, AC VFA Dielectric Strength Vdis Terminals to case, AC 1 minute 15 kV ROA bv (HES: 0.3N-m) . Mounting Torque TOR (Recommended torque : 0.3N-m) 0.5 N-m BRAY - SAA FE = Elect rical Characteristics (HuO2VYHE Te =25) forward Voltage Vr | Ir=4A, Pulse neasurement MAX 0.98 Vv a Current Tk Vr= Vem, Pulse urement ee HA Reveree Recovery Time trr Ir=0.5A, In=1A pan) ns ini Resistance 93 c I io case MAX 4.5 cw KARAB IL RAKROAMICSMU SE LCRRTSOCEPHSY ET, * All specifications are subject to change without notice. 200 = (J533) www.shindengen.co.jp/product/semi/ Super FRD (Single) Two Terminal Type D4L20U Mist) CHARACTERISTIC DIAGRAMS Na Tete IBS 4B AHR CAR URS TNS Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability 20 6 8% ~ a 10 = Zz D mo 5 = 5 e Z to5 pu ~~ 60 S a 2 5 S 4 o . 3 = 90 a 2 Te= a 3 g ~|Te= 25C(TYP) Bs > 40 EB -=150C(M a 5 3 oy Te=150C(MAX 2 3 = Te=150C(TYP) S 2 Sine wave 5 ae a zZ 2 05 a - B 4 = poe pope 2 20 10ms 10msi = 1 Py | DB Icycle 0.2 & __T | p= 3 lo Non-repetitive (Pulse measurement] Tj=150C a Tj=25C ol : i 4 5 7 C 5 Forward Voltage Vr (V] Average Rectified Forward Current Io (A) Number of Cycles [cycle] T4LF4VYINT Tc-lo #aAS Derating Curve Tc-lo podeatetackz lo Junction Capacitance 8 o- Vr 200 f=1MHz Te= TYP hot 1 Vr=Vem wee | D=tp/T 100 20 Average Rectified Forward Current Io [A] Junction Capacitance Cj (pF) 5 Case Temperature Te [C] Reverse Voltage Vr (VJ * Sine wave l450Hz Til LT ETF. ** 50Hz sine wave is used for measurements. EET ORE LRA IZING YEO TRU ES. _ oo. Typical dita RE) RL ES. KERAB LRM ROLOIC SRY LCRRFSCERHU ET. + Semiconductor products generally have characteristic variation. % All specifications are subject to change without notice. Typical is a statistical average of the device's ability. www. shindengen.co.jp/product/semi/ (6633) 201