NOTES : 1.Measured with I
F
=0.5A,I
R
=1A,I
RR
=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4. 0V DC.
3.Thermal Resistance Junction to Ambient.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
I
R
@T
A
=
55 C
@T
J
=100 C
UF1001 thru UF1007
ULTRA FAST RECTIFIERS
FEATURES
Low cost
Diffused junction
Ultra fast switching for high efficiency
Low reverse leakage current
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
ME CHANICAL DAT A
Case : JEDEC DO -41 m olded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
MAXIMUM RATI NGS AND ELECTRICAL CHA RACTERISTICS
Ratings at 25
℃
am bient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
F o r capacitive lo ad, dera te c u rr e n t by 20%
200
140
200
50
35
50
1000
700
1000
100
70
100
800
560
800
600
420
600
400
280
400
Maxim um Average Forward
Re ctifie d C urr ent
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
Maximum R ecu rrent P eak Reverse Volt age
Maximum RMS Voltage
Maxim um DC Blocking Voltage
Maxim um forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C
1.0
30
1.0
5
100
T
J
Operating Temperature Range
-55 to +125 C
TSTG
Storage Te m perature Range
-55 to +150
C
Typic al Thermal Resistance (Note 3)
R
0JA
25
C/W
C
J
Typical Junction
Capacitance (Note 2)
20
pF
uA
V
A
A
V
UNIT
V
V
All Dimensions in millimete r
Max.
Mi n.
DO-41
Dim.
A
D
C
B 25.4 5.2 0
-
4.10
0.71
2.00 2.7 0
0.8 6
DO-41
A
C
D
A
B
CHARACTERISTICS SYMBOL
Maximum Reverse Recovery Time (Note 1)
T
RR
1.3 1.7
10
50 75
ns
UF1001
UF1002
UF1003
UF1004
UF1005
UF1006
UF1007
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 1.0
Ampere
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KDCC02
RATING AND CHARACT ERISTIC CURVES
UF1001 thru UF1007
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMB ER OF CYCLES AT 60Hz
1 5 10 50 100220
0
10
20
30
40
Pulse width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FOR WARD CURRENT
AMPERES
25
75 100 125 150
0.6
0 50
0.2
1.0
175
SINGLE PHASE HALF W AVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
AMBIENT TEMPERATURE , C
0.8
0.4
IN STANTANEOUS F ORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FOR WARD CURRENT ,(A)
0.2 0.4 1.2 1.4
0
0.1
1.0
10
0.6 0.8 1.0
0.01 1.8
1.6
TJ= 25 C
PULSE WIDTH 300us
UF1001 - UF1003
UF1005 - UF1007
UF1004
FIG.3 - TYPICAL JUNCTION CAPACITANCE
CA PACITANCE , (p F)
REVER SE VOLTAGE , VOLTS
10
1100
100
10
1.0 4
UF1 005 to UF1 007
UF1 001 to UF1 004
T
J
= 25 C, f= 1MHz
REV. 2, 01-Dec-2000, KDCC02