© Semiconductor Components Industries, LLC, 2011
September, 2011 Rev. 13
1Publication Order Number:
TIP100/D
TIP100, TIP101, TIP102
(NPN); TIP105, TIP106,
TIP107 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
Designed for generalpurpose amplifier and lowspeed switching
applications.
Features
High DC Current Gain
hFE = 2500 (Typ) @ IC
= 4.0 Adc
CollectorEmitter Sustaining Voltage @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) TIP100, TIP105
= 80 Vdc (Min) TIP101, TIP106
= 100 Vdc (Min) TIP102, TIP107
Low CollectorEmitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC
= 3.0 Adc
= 2.5 Vdc (Max) @ IC = 8.0 Adc
Monolithic Construction with Builtin BaseEmitter Shunt Resistors
PbFree Packages are Available*
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO220AB
CASE 221A
STYLE 1
MARKING
DIAGRAM
DARLINGTON 8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
6080100 VOLTS, 80 WATTS
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123
4
TIP10x = Device Code
x = 0, 1, 2, 5, 6, or 7
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
TIP10xG
AYWW
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
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2
MAXIMUM RATINGS
Rating Symbol
TIP100,
TIP105
TIP101,
TIP106
TIP102,
TIP107 Unit
Collector Emitter Voltage VCEO 60 80 100 Vdc
Collector Base Voltage VCB 60 80 100 Vdc
Emitter Base Voltage VEB 5.0 Vdc
Collector Current Continuous
Peak
IC8.0
15 Adc
Base Current IB1.0 Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD80
0.64
W
W/°C
Unclamped Inductive Load Energy (1) E 30 mJ
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD2.0
0.016
W
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg 65 to + 150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase RqJC 1.56 °C/W
Thermal Resistance, JunctiontoAmbient RqJA 62.5 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0) TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
VCEO(sus)
60
80
100
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) TIP100, TIP105
(VCE = 40 Vdc, IB = 0) TIP101, TIP106
(VCE = 50 Vdc, IB = 0) TIP102, TIP107
ICEO
50
50
50
mAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) TIP100, TIP105
(VCB = 80 Vdc, IE = 0) TIP101, TIP106
(VCB = 100 Vdc, IE = 0) TIP102, TIP107
ICBO
50
50
50
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO 8.0 mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 8.0 Adc, VCE = 4.0 Vdc)
hFE
1000
200
20,000
CollectorEmitter Saturation Voltage
(IC = 3.0 Adc, IB = 6.0 mAdc)
(IC = 8.0 Adc, IB = 80 mAdc)
VCE(sat)
2.0
2.5
Vdc
BaseEmitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc) VBE(on) 2.8 Vdc
DYNAMIC CHARACTERISTICS
SmallSignal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) hfe 4.0
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP105, TIP106, TIP107
TIP100, TIP101, TIP102
Cob
300
200
pF
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
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3
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
8.0 k 120
BASE
EMITTER
COLLECTOR
8.0 k 120
ORDERING INFORMATION
Device Package Shipping
TIP100 TO220 50 Units / Rail
TIP100G TO220
(PbFree)
50 Units / Rail
TIP101 TO220 50 Units / Rail
TIP101G TO220
(PbFree)
50 Units / Rail
TIP102 TO220 50 Units / Rail
TIP102G TO220
(PbFree)
50 Units / Rail
TIP105 TO220 50 Units / Rail
TIP105G TO220
(PbFree)
50 Units / Rail
TIP106 TO220 50 Units / Rail
TIP106G TO220
(PbFree)
50 Units / Rail
TIP107 TO220 50 Units / Rail
TIP107G TO220
(PbFree)
50 Units / Rail
80
0
0 20 40 60 80 100 120 160
Figure 2. Power Derating
T, TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
40
20
60
140
TC
4.0
0
2.0
1.0
3.0
TA
TA
TC
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
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4
Figure 3. Switching Times Test Circuit
5.0
0.1
Figure 4. Switching Times
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
2.0
1.0
0.5
0.05 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10
0.3
0.7
PNP
NPN
tf
tr
ts
td @ VBE(off) = 0 V
V2
approx
+8.0 V
V1
approx
-12 V
tr, tf 10 ns
DUTY CYCLE = 1.0%
25 ms
0
RB
51 D1
+4.0 V
VCC
-30 V
RC
TUT
8.0 k 120
SCOPE
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
3.0
0.2
0.1
0.07
5.0 7.0
Figure 5. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500
ZqJC(t) = r(t) RqJC
RqJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01 SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02
20
1.0
Figure 6. ActiveRegion Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.02 2.0 5.0 20 50 100
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
0.5
IC, COLLECTOR CURRENT (mA)
TJ = 150°Cd
c
1ms
100 ms
0.2
0.1
10
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
0.05
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
5ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150°C. TJ(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
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5
300
0.1
VR, REVERSE VOLTAGE (VOLTS)
30
2.0 5.0 10 20 100500.2 0.5 1.0
C, CAPACITANCE (pF)
100
50
TJ = 25°C
Cib
70
Cob
PNP
NPN
Figure 7. SmallSignal Current Gain
10,000
1.0
f, FREQUENCY (kHz)
10 20 50 100 200 10002.0 5.0 10
3000
500
100
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
1000
PNP
NPN
Figure 8. Capacitance
50
500
hfe , SMALL-SIGNAL CURRENT GAIN
5000
2000
300
200
30
20
200
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
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6
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
20,000
0.1
Figure 9. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
200 0.2 0.3 0.5 1.0 2.0 10
500
1000
300
hFE, DC CURRENT GAIN
2000
3000
VCE = 4.0 V
0.7 3.0
NPN
TIP100, TIP101, TIP102
PNP
TIP105, TIP106, TIP107
Figure 10. Collector Saturation Region
3.0
0.3
IB, BASE CURRENT (mA)
1.0 0.5 1.0 2.0 10 30
1.8
IC = 2.0 A
TJ = 25°C
4.0 A
2.2
2.6
0.7 5.0
3.0
0.1
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 1.0 2.0 5.0 10
2.5
2.0
1.5
1.0
0.5
TJ = 25°C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
Figure 11. “On” Voltages
VBE @ VCE = 4.0 V
3.0
10,000
5000 TJ = 150°C
25°C
-55°C
20
IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
VCE = 4.0 V
TJ = 150°C
25°C
-55°C
1.4
6.0 A
IB, BASE CURRENT (mA)
TJ = 25°C
IC, COLLECTOR CURRENT (AMP)
V, VOLTAGE (VOLTS)
TJ = 25°C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
VBE @ VCE = 4.0 V
5.0 7.0
20,000
0.1
200 0.2 0.3 0.5 1.0 2.0 10
500
1000
300
2000
3000
0.7 3.0
10,000
5000
5.0 7.0
7000
700
3.0 7.0
3.0
0.3
1.0 0.5 1.0 2.0 10 30
1.8
2.2
2.6
0.7 5.0 20
1.4
3.0 7.0
IC = 2.0 A 4.0 A 6.0 A
0.7 7.0
3.0
0.1 0.2 0.3 0.5 1.0 2.0 5.0 10
2.5
2.0
1.5
1.0
0.5 3.00.7 7.0
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
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7
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.036 0.64 0.91
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
T
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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TIP100/D
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