MJE270 NPN PLASTIC POWER TRANSISTOR
MJE271 PNP PLASTIC POWER TRANSISTOR
Medium Power Darlingtons for Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter) VCBO max. 100 V
Collector-emitter voltage (open base) VCEO max. 100 V
Collector current ICmax. 2.0 A
Total power dissipation up to TC = 25°C Ptot max. 15 W
Junction temperature Tjmax. 150 °C
Collector-emitter saturation voltage
IC = 20 mA; IB = 0.2 mA VCEsat max. 2.0 V
D.C. current gain
IC = 20 mA; VCE = 3 V hFE min. 500
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter) VCBO max. 100 V
Collector-emitter voltage (open base) VCEO max. 100 V
MJE270, MJE271
ALL DIMENSIONS IN MM
PIN CONFIGURATION
1. EMITTER
2. COLLECTOR
3. BASE
1
3
2
TO-126 (SOT-32) Plastic Package
Transys
Electronics
LI
M
ITE
D
Emitter-base voltage (open collector) VEBO max. 5.0 V
Collector current ICmax. 2.0 A
Collector current (peak) ICmax. 4.0 A
Base current IBmax. 0.1 A
Total power dissipation up to TC = 25°C Ptot max. 15 W
Derate above 25°C max. 0.12
W/
°
C
Total power dissipation up to TA = 25°C Ptot max. 1.5 W
Derate above 25°C max. 0.012
W/
°
C
Junction temperature Tjmax. 150 º
C
Storage temperature Tstg –65 to +150 º
C
THERMAL RESISTANCE
From junction to case Rth j–c 8.33 °
C/W
From junction to ambient Rth j–a 83.3 °
C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 100 V ICBO max. 0.3 mA
IB = 0; VCE = 100 V ICEO max. 1.0 mA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 0.1 mA
Breakdown voltages
IC = 10 mA; IB = 0 VCEO(sus)* min. 100 V
IC = 1 mA; IE = 0 VCBO min. 100 V
IE = 1 mA; IC = 0 VEBO min. 5 V
Saturation voltages
IC = 20 mA; IB = 0.2 mA VCEsat* max. 2.0 V
IC = 120 mA; IB = 1.2 mA VCEsat* max. 3.0 V
Base emitter on voltage
IC = 120 mA; VCE = 10V VBE(on)* max. 2.0 V
D.C. current gain
IC = 20 mA; VCE = 3 V hFE* min. 500
IC = 120 mA; VCE = 10 V hFE* min. 1500
Transition frequency f = 1 MHz
IC = 0.05 A; VCE = 5 V fT(1) min. 6.0 MHz
Second Breakdown Collector
Current with base Forward Biased
VCE = 40V; t = 1.0s; (non-repetitive) IS/b min. 375 mA
(1) fT = |hfe|• ftest
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%.
MJE270, MJE271
