UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R203-012,A
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC MJE2955T is designed for general
purpose of amplif ier and s witching applications.
TO-220
1
1:BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unles s ot herwise specified )
PARAMETER SYMBOL RATING UNIT
Collector-base v olt age VCBO 70 V
Collector-emitter voltage VCEO 60 V
Emitter-base voltage VEBO 5 V
Total Power Dissipation(Ta=25°C) Pc 75 W
Collector current Ic 10 A
Junction Temperat ure Tj 150
°C
Storage Temperature TSTG -55 ~ +150 °C
Base Current IB 6 A
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless ot herwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-emitt er break down voltage BVCEO Ic=200mA 60 V
Collector-Base Breakdown Voltage VBCBO Ic=10mA 70 V
Emitter-Bas e Break down Voltage BVEBO IE=10mA 5 V
Collector cut-off current ICBO
ICEO
ICEX
VCB=70V
VCE=30V
VCE=70V,VEB(off)=1.5V
1
700
1
mA
µA
mA
Emitter cut-off current IEBO V
EB=5V 5 mA
Collector-emitter s at urat ion voltage VCE(SAT)1
VCE(SAT)2 IC=4A,IB=0.4A
IC=10A,IB=3.3A 1.1
8.0 V
Baser-emitt er on voltage VBE(ON) V
CE=4V,IC=4A 1.8 V
DC current gain hFE1
hFE2 IC=4A,VCE=4V
IC=10A,VCE=4V 20
5 100
Current gain bandwidth product fT VCE=10V,IC=0.5A,f=1MHz 2 MHZ
