UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO Pc Ic Tj TSTG IB 70 60 5 75 10 150 -55 ~ +150 6 V V V W A C C A Collector-base voltage Collector-emitter voltage Emitter-base voltage Total Power Dissipation(Ta=25C) Collector current Junction Temperature Storage Temperature Base Current ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN Collector-emitter breakdown voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector cut-off current BVCEO VBCBO BVEBO ICBO ICEO ICEX IEBO VCE(SAT)1 VCE(SAT)2 VBE(ON) hFE1 hFE2 fT Ic=200mA Ic=10mA IE=10mA VCB=70V VCE=30V VCE=70V,VEB(off)=1.5V VEB=5V IC=4A,IB=0.4A IC=10A,IB=3.3A VCE=4V,IC=4A IC=4A,VCE=4V IC=10A,VCE=4V VCE=10V,IC=0.5A,f=1MHz 60 70 5 Emitter cut-off current Collector-emitter saturation voltage Baser-emitter on voltage DC current gain Current gain bandwidth product UTC TYP 20 5 2 UNISONIC TECHNOLOGIES CO. LTD MAX 1 700 1 5 1.1 8.0 1.8 100 UNIT V V V mA A mA mA V V MHZ 1 QW-R203-012,A