74HC30; 74HCT30 8-input NAND gate Rev. 7 -- 2 December 2015 Product data sheet 1. General description The 74HC30; 74HCT30 is an 8-input NAND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits Complies with JEDEC standard JESD7A Input levels: For 74HC30: CMOS level For 74HCT30: TTL level ESD protection: HBM JESD22-A114F exceeds 2000 V MM JESD22-A115-A exceeds 200 V Multiple package options Specified from 40 C to +85 C and from 40 C to +125 C 3. Ordering information Table 1. Ordering information Type number 74HC30D Package Temperature range Name Description Version 40 C to +125 C SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 40 C to +125 C SSOP14 plastic shrink small outline package; 14 leads; body width 5.3 mm SOT337-1 40 C to +125 C TSSOP14 plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1 74HCT30D 74HC30DB 74HCT30DB 74HC30PW 74HCT30PW 74HC30; 74HCT30 Nexperia 8-input NAND gate 4. Functional diagram $ % & ' ( ) * + < PQD Fig 1. PQD Logic symbol Fig 2. IEC logic symbol $ % & ' < ( PQD ) * + Fig 3. Logic diagram 74HC_HCT30 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 2 December 2015 (c) Nexperia B.V. 2017. All rights reserved 2 of 15 74HC30; 74HCT30 Nexperia 8-input NAND gate 5. Pinning information 5.1 Pinning +& +&7 $ % 9&& QF & + ' * ( QF ) QF *1' < DDO Fig 4. Pin configuration SO14 and (T)SSOP14 5.2 Pin description Table 2. Pin description Symbol Pin Description A 1 data input B 2 data input C 3 data input D 4 data input E 5 data input F 6 data input GND 7 ground (0 V) Y 8 data output n.c. 9 not connected n.c. 10 not connected G 11 data input H 12 data input n.c. 13 not connected VCC 14 supply voltage 74HC_HCT30 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 2 December 2015 (c) Nexperia B.V. 2017. All rights reserved 3 of 15 74HC30; 74HCT30 Nexperia 8-input NAND gate 6. Functional description Table 3. Function table[1] Input Output A B C D E F G H Y L X X X X X X X H X L X X X X X X H X X L X X X X X H X X X L X X X X H X X X X L X X X H X X X X X L X X H X X X X X X L X H X X X X X X X L H H H H H H H H H L [1] H = HIGH voltage level; L = LOW voltage level; X = don't care. 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage IIK input clamping current VI < 0.5 V or VI > VCC + 0.5 V IOK output clamping current VO < 0.5 V or VO > VCC + 0.5 V IO output current 0.5 V < VO < VCC + 0.5 V ICC supply current IGND ground current Tstg storage temperature total power dissipation Ptot Conditions SO14, (T)SSOP14 packages Min Max 0.5 +7 V [1] - 20 mA [1] - 20 mA - 25 mA - 50 mA 50 - mA 65 +150 C - 500 mW [2] [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For SO14 package: Ptot derates linearly with 8 mW/K above 70 C. Unit For (T)SSOP14 packages: Ptot derates linearly with 5.5 mW/K above 60 C. 74HC_HCT30 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 2 December 2015 (c) Nexperia B.V. 2017. All rights reserved 4 of 15 74HC30; 74HCT30 Nexperia 8-input NAND gate 8. Recommended operating conditions Table 5. Recommended operating conditions Voltages are referenced to GND (ground = 0 V) Symbol Parameter Conditions 74HC30 Min Typ 74HCT30 Max Min Typ Unit Max VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V VI input voltage 0 - VCC 0 - VCC V VO output voltage 0 - VCC 0 - VCC V Tamb ambient temperature 40 - +125 40 - +125 C t/V input transition rise and fall rate VCC = 2.0 V - - 625 - - - ns/V VCC = 4.5 V - 1.67 139 - 1.67 139 ns/V VCC = 6.0 V - - 83 - - - ns/V 9. Static characteristics Table 6. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter 25 C Conditions 40 C to +85 C 40 C to +125 C Unit Min Typ Max Min Max Min Max VCC = 2.0 V 1.5 1.2 - 1.5 - 1.5 - V VCC = 4.5 V 3.15 2.4 - 3.15 - 3.15 - V VCC = 6.0 V 4.2 3.2 - 4.2 - 4.2 - V VCC = 2.0 V - 0.8 0.5 - 0.5 - 0.5 V VCC = 4.5 V - 2.1 1.35 - 1.35 - 1.35 V VCC = 6.0 V - 2.8 1.8 - 1.8 - 1.8 V IO = 20 A; VCC = 2.0 V 1.9 2.0 - 1.9 - 1.9 - V IO = 20 A; VCC = 4.5 V 4.4 4.5 - 4.4 - 4.4 - V IO = 20 A; VCC = 6.0 V 5.9 6.0 - 5.9 - 5.9 - V IO = 4.0 mA; VCC = 4.5 V 3.98 4.32 - 3.84 - 3.7 - V IO = 5.2 mA; VCC = 6.0 V 5.48 5.81 - 5.34 - 5.2 - V IO = 20 A; VCC = 2.0 V - 0 0.1 - 0.1 - 0.1 V IO = 20 A; VCC = 4.5 V - 0 0.1 - 0.1 - 0.1 V IO = 20 A; VCC = 6.0 V - 0 0.1 - 0.1 - 0.1 V IO = 4.0 mA; VCC = 4.5 V - 0.15 0.26 - 0.33 - 0.4 V IO = 5.2 mA; VCC = 6.0 V - 0.16 0.26 - 0.33 - 0.4 V 74HC30 VIH VIL VOH VOL HIGH-level input voltage LOW-level input voltage HIGH-level output voltage LOW-level output voltage VI = VIH or VIL VI = VIH or VIL II input leakage current VI = VCC or GND; VCC = 6.0 V - - 0.1 - 1 - 1 A ICC supply current VI = VCC or GND; IO = 0 A; VCC = 6.0 V - - 2.0 - 20 - 40 A 74HC_HCT30 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 2 December 2015 (c) Nexperia B.V. 2017. All rights reserved 5 of 15 74HC30; 74HCT30 Nexperia 8-input NAND gate Table 6. Static characteristics ...continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter CI 25 C Conditions input capacitance 40 C to +85 C 40 C to +125 C Unit Min Typ Max Min Max Min Max - 3.5 - - - - - pF 74HCT30 VIH HIGH-level input voltage VCC = 4.5 V to 5.5 V 2.0 1.6 - 2.0 - 2.0 - V VIL LOW-level input voltage VCC = 4.5 V to 5.5 V - 1.2 0.8 - 0.8 - 0.8 V VOH HIGH-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = 20 A 4.4 4.5 - 4.4 - 4.4 - V IO = 4.0 mA 3.98 4.32 - 3.84 - 3.7 - V LOW-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = 20 A - 0 0.1 - 0.1 - 0.1 V IO = 4.0 mA - 0.15 0.26 - 0.33 - 0.4 V VOL II input leakage current VI = VCC or GND; VCC = 5.5 V - - 0.1 - 1 - 1 A ICC supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V - - 2.0 - 20 - 40 A ICC additional supply current per input pin; VI = VCC 2.4 V; IO = 0 A; other inputs at VCC or GND; VCC = 4.5 V to 5.5 V - 60 216 - 275 - 294 A CI input capacitance - 3.5 - - - - - pF 10. Dynamic characteristics Table 7. Dynamic characteristics GND = 0 V; CL = 50 pF; for test circuit see Figure 6. Symbol Parameter 25 C Conditions 40 C to +125 C Unit Min Typ Max Max (85 C) Max (125 C) VCC = 2.0 V - 41 130 165 195 ns VCC = 4.5 V - 15 26 33 39 ns VCC = 5.0 V; CL = 15 pF - 12 - - - ns - 12 22 28 33 ns VCC = 2.0 V - 19 75 95 110 ns VCC = 4.5 V - 7 15 19 22 ns VCC = 6.0 V - 6 13 16 19 ns 74HC30 tpd propagation delay A, B, C, D, E, F, G, H to Y; see Figure 5 [1] VCC = 6.0 V tt transition time 74HC_HCT30 Product data sheet see Figure 5 [2] All information provided in this document is subject to legal disclaimers. Rev. 7 -- 2 December 2015 (c) Nexperia B.V. 2017. All rights reserved 6 of 15 74HC30; 74HCT30 Nexperia 8-input NAND gate Table 7. Dynamic characteristics ...continued GND = 0 V; CL = 50 pF; for test circuit see Figure 6. Symbol Parameter CPD 25 C Conditions power dissipation capacitance [3] per package; VI = GND to VCC 40 C to +125 C Unit Min Typ Max Max (85 C) Max (125 C) - 15 - - - pF - 16 28 35 42 ns 74HCT30 [1] propagation delay A, B, C, D, E, F, G, H to Y; see Figure 5 tpd VCC = 4.5 V VCC = 5.0 V; CL = 15 pF transition time tt power dissipation capacitance CPD [1] - 12 - - - ns VCC = 4.5 V; see Figure 5 [2] - 7 15 19 22 ns per package; VI = GND to VCC 1.5 V [3] - 15 - - - pF tpd is the same as tPHL and tPLH. [2] tt is the same as tTHL and tTLH. [3] CPD is used to determine the dynamic power dissipation (PD in W): PD = CPD VCC2 fi N + (CL VCC2 fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (CL VCC2 fo) = sum of outputs. 11. Waveforms 9, $%&' ()*+ LQSXW *1' 90 W3+/ 92+ W3/+ 9< 90 Q