1999. 11. 30 1/3
SEMICONDUCTOR
TECHNICAL DATA
MPS651
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
VOLTAGE REGULATOR, RELAY,
LAMP DRIVER, INDUSTRIAL USE
FEATURES
High Voltage : VCEO=60V(Min.).
High Current : IC(Max.)=1A.
High Transition Frequency : fT=150MHz(Typ.).
Wide Area of Safe Operation.
Complementary to MPS751.
MAXIMUM RATING (Ta=25 )
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 100 nA
DC Current Gain
hFE(1) VCE=2V, IC=50mA 100 - 320
hFE(2) VCE=2V, IC=1A 30 - -
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 60 - - V
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - 0.15 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=50mA - 0.85 1.2 V
Transition Frequency fTVCE=10V, IC=50mA - 150 - MHz
Collector Output Capacitanc Cob VCB=10V, IE=0, f=1MHz - 12 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 5 V
Collector Current
DC IC1
A
Pulse ICP 2
Collector Power Dissipation PC625 mW
Junction Temperature Tj150
Storage Temperature Range Tstg -55 150
Note : hFE(1) Classification Y:100 200 , GR:160 320
1999. 11. 30 2/3
MPS651
Revision No : 2
1999. 11. 30 3/3
MPS651
Revision No : 2
