DESCRIPTION These high-voltage, high-current Darling- ton transistor arrays are comprised of seven silicon NPN Darlington pairs on a common monolithic substrate. All units feature open collector outputs and integral suppression diodes for inductive loads. Peak inrush cur- rents to 600mA are allowable, making them ideal for driving tungsten filament lamps also. The Type ULN-2001 is a general-purpose array which may be used with DTL, TTL, PMOS, CMOS, etc. It is pinned with inputs opposite outputs to facilitate ease of circuit board layout and is priced to compete di- rectly with discrete transistor alternatives. The Type ULN-2002 was specifically de- signed for use with 14 to 25V PMOS devices. Each input has a Zener diode and resistor in series in order to limit the input current toa safe value. The Type ULN-2003 has a series base resis- tor to each Dartington pair, and thus allows operation directly with TTL or CMOS oper- ating at a supply voltage of 5V. The Type ULN-2004 has an appropriate series input resistor to allow its operation directly from CMOS or PMOS outputs utiliz- ing supply voltages of 6 to 15V. The required input current is below that of the Type ULN- 2003 while the required input voltage is less than that required by the Type ULN-2002. In all cases, the individua! Darlington pair collector current rating is 500mA. However, outputs may be paralleled for higher toad current capability. All devices are supplied in a +t6-pin dual in-line plastic BA package. FEATURES e Peak inrush current 600mMA Protected internally against inductive toads @ Open collector topology Compatible with most logic technologies EQUIVALENT SCHEMATICS ULN2001/2/3/4-N PIN CONFIGURATION N PACKAGE ORDER PART NO. ULN2001N ULN2002N ULN2003N ULN2004N TYPE ULN2001 (each driver) TYPE ULN2002 (each driver) TYPE ULN2003 (each driver) TYPE ULN2004 (each driver) ABSOLUTE MAXIMUM RATINGS at 25C Free-Air temperature for any one Darlington pair unless otherwise specified. PARAMETER RATING UNIT Voce Output voltage 50 Vv VIN Input voltage 30 Vv VEBO Emitter base voltage 6 Vv Ic Continuous collector current 500 mA (B Continuous base current 25 mA Pp Power dissipation 1.3 Ww Derating factor above 25C 95 C/W TA Ambient temperature range (operating) 0 to +85 C Ts Storage temperature range ~65 to +150 C *NOTE Under normal operating conditions, these units will sustain 350mA per output with VcE(SAT) = 1.6V at 70C with a pulse width of 20 ms and a duty cycle of 30%. 383 Si/MOtiES DC ELECTRICAL CHARACTERISTICS Taxa = 25C unless otherwise specified.1.2.3 ULN2001/2/3/4-N Test LIMITS PARAMETER TEST CONDITIONS . UNIT Fig. Min Typ Max IcEx Output leakage current Vce = 50V, Ta = 70C 1A _ _ 100 uA Type ULN-2002 Voce = 50V, Ta = 70C, Vin = 6V 1B _ _ 500 uA Type ULN-2004 Vce = 50V, Ta = 70C, Vin =1V 1B - _ 500 vA VcE(sat) Collector-emitter Ic = 350mA, !8 = 500uA 2 _ 1.25 1.6 Vv Saturation voltage lo = 200mA, Ip = 350nA 2 _ 11 1.3 Vv Ic = 100mA, IB = 250uA 2 _ 0.9 11 Vv lin(on) Input current Type UL.N-2002 Vin = 17V 3 - 0.85 1.3 mA Type ULN-2003 Vin = 3.85V 3 _ 0.93 1.35 mA Type ULN~-2004 Vin = 5V 3 _ 0.35 0.5 mA Vin = 12V 3 _ 1.0 1.45 mA liN(OFF) fnput current Io = 500uA, Ta = 70C 4 50 65 _ BA VIN(ON) Input voltage Type ULN-2002 VcE = 2V, Ic = 300MA 5 _ _ 13 Vv Type ULN-2003 VceE = 2V, Ic = 200mA 5 2.4 Vv VcE = 2V, Ic = 250MA 5 _ _ 2.7 Vv Voce = 2V, Ic = 300MA 5 _ _ 3.0 Vv Type ULN-2004 Voce = 2V, Ic = 125mMA 5 _ _ 5.0 Vv VceE = 2V, Ic = 200MA 5 _ _ 6.0 Vv Voce = 2V, Ic = 275mA 5 _ _ 7.0 Vv Voce = 2V, Ic = 350MA 5 _ 8.0 Vv hrE D-C forward current Voce = 2V, Ic = 350mMA 2 1000 _ _ transfer ratio Type ULN-2001 CIN Input capacitance _ _ 15 30 pF le Clamp diode leakage VR = 50V 6 _ _ 50 pA current VE Clamp diode forward voltage Ip = 350mA 7 _ V7? 2 Vv NOTES 1. Aillimits stated apply to the complete Darlington series except as specified for a single device type. 2. The linjorr) current fimit guarantees against par ial turn-on of the output. 3. The Vincon) Voltage limit guarantees a minimum cutput sink current per the specified test conditions. AC ELECTRICAL CHARACTERISTICS Ta = 25C unless otherwise specified.1.2.3 Test LIMITS PARAMETER TEST CONDITIONS Fi UNIT 'g. Min Tye Max tpLH Turn-on delay 0.5 Ein to 0.5 Eout 1.0 5 BS tpH. Turn-off delay 0.5 Ew to 0.5 Eout _ 1.0 5 us NOTES 1. All limits stated apply to the complete Darlington series except as specified for a single device type. 2. The linjorr) current limit guarantees against partial turn-on of the output. 3. The Vincon) voltage limit guarantees a minimum utput sink current per the specified test conditions. 384 Si]NBtics TYPICAL PERFORMANCE CHARACTERISTICS ULN2001/2/3/4-N COLLECTOR CURRENT AS A FUNCTION OF SATURATION VOLTAGE COLLECTOR CURRENT IN mA - 1 c 9 05 1.0 1.5 SATURATION VOLTAGE - VCE(SAT) INPUT CURRENT AS A FUNCTION OF INPUT VOLTAGE FOR TYPE ULN-2002 ULN-2002 COLLECTOR CURRENT AS A FUNCTION OF INPUT CURRENT 8 8 s 8 COLLECTOR CURRENT IN mA - |, s & 9 200 400 600 INPUT CURRENT IN ZA - big INPUT CURRENT AS A FUNCTION OF INPUT VOLTAGE FOR TYPE ULN-2003 ULN-2003 ALLOWABLE AVERAGE PACKAGE POWER DISSIPATION AS A FUNCTION OF AMBIENT TEMPERATURE Qa sc 100 150 AMBIENT TEMPERATURE IN "C ALLOWABLE PACKAGE POWER DISSIPATION IN WATTS. INPUT CURRENT AS A FUNCTION OF INPUT VOLTAGE FOR TYPE ULN-2004 ULN-20104 z 2 Zoo < - . < & sh 7 E z WA a s z t a? z 15 z = z z a 5 v ae w 1,0 = 3 = 5 oO x 3 5 3 Ee 2 as 2 Zz 5 2 a Zz z 4 12 14 16 18 20 22 24 26 2 3 4 5 6 7 8 9 5 6 7 8 9 10 WW 42 INPUT VOLTAGE - Vin INPUT VOLTAGE - Vin INPUT VOLTAGE - Von OPEN + 50V OPEN QO C4) HFE. 'B "Cex we OPEN B v ( { ce be Figure 1A Figure 1B Figure 2 Sinotics 385 TEST FIGURES (Cont'd) ULN2001/2/3/4-N OPEN OPEN +50V OPEN Figure 3 Figure 4 OPEN Figure 5 +50V Figure 6 O- OPEN | OPEN Figure 7 TYPICAL APPLICATIONS PMOS TO LOAD TTL TO LOAD ULN2002 ULN2003 av ay Voc Vv PMOS. OUTPUT LAMP ~ 2 Test m= OUTPUT BUFFER FOR HIGHER CURRENT LOADS ULN2004 *Vpp tv Fk 11) 200%: 10 2N4901 CMOS OUTPUT TT 386 Sin0tics