November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ___________________________________________________________________________________________ D G D G S S TO-92 Absolute Maximum Ratings TA = 25C unless otherwise noted 2N7000 2N7002 NDS7002A Symbol Parameter VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS < 1 M) 60 V VGSS Gate-Source Voltage - Continuous 20 V 40 - Non Repetitive (tp < 50s) ID Maximum Drain Current - Continuous PD Maximum Power Dissipation - Pulsed o Derated above 25 C TJ,TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds Units 200 115 280 500 800 1500 400 200 300 3.2 1.6 -55 to 150 2.4 -65 to 150 300 mA mW mW/C C C THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (c) 1997 Fairchild Semiconductor Corporation 312.5 625 417 C/W 2N7000.SAM Rev. A1 Electrical Characteristics T Symbol A = 25C unless otherwise noted Parameter Conditions Type Min 60 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 A All IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 2N7000 V TJ=125C VDS = 60 V, VGS = 0 V TJ=125C IGSSF IGSSR Gate - Body Leakage, Forward Gate - Body Leakage, Reverse 2N7002 NDS7002A 1 A 1 mA 1 A 0.5 mA VGS = 15 V, VDS = 0 V 2N7000 10 nA VGS = 20 V, VDS = 0 V 2N7002 NDS7002A 100 nA VGS = -15 V, VDS = 0 V 2N7000 -10 nA VGS = -20 V, VDS = 0 V 2N7002 NDS7002A -100 nA V ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 A RDS(ON) 2N7000 0.8 2.1 3 2N7002 NDS7002A 1 2.1 2.5 1.2 5 1.9 9 1.8 5.3 1.2 7.5 1.7 13.5 2N7000 Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA TJ =125C VGS = 4.5 V, ID = 75 mA 2N7002 VGS = 10 V, ID = 500 mA TJ =100C VGS = 5.0 V, ID = 50 mA TJ =100C VGS = 10 V, ID = 500 mA NDS7002A TJ =125C VGS = 5.0 V, ID = 50 mA TJ =125C VDS(ON) Drain-Source On-Voltage VGS = 10 V, ID = 500 mA 2N7000 VGS = 4.5 V, ID = 75 mA VGS = 10 V, ID = 500mA 2N7002 VGS = 5.0 V, ID = 50 mA VGS = 10 V, ID = 500mA VGS = 5.0 V, ID = 50 mA NDS7002A 1.7 7.5 2.4 13.5 1.2 2 2 3.5 1.7 3 2.8 5 0.6 2.5 0.14 0.4 0.6 3.75 0.09 1.5 0.6 1 0.09 0.15 V 2N7000.SAM Rev. A1 Electrical Characteristics T Symbol A = 25oC unless otherwise noted Parameter Conditions Type Min Typ Max Units ON CHARACTERISTICS Continued (Note 1) ID(ON) gFS On-State Drain Current Forward Transconductance VGS = 4.5 V, VDS = 10 V 2N7000 75 600 VGS = 10 V, VDS > 2 VDS(on) 2N7002 500 2700 VGS = 10 V, VDS > 2 VDS(on) NDS7002A 500 2700 VDS = 10 V, ID = 200 mA 2N7000 100 320 VDS > 2 VDS(on), ID = 200 mA 2N7002 80 320 VDS > 2 VDS(on), ID = 200 mA NDS7002A 80 320 mA mS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ton Turn-On Time toff Turn-Off Time VDS = 25 V, VGS = 0 V, f = 1.0 MHz All 20 50 pF All 11 25 pF All 4 5 pF ns VDD = 15 V, RL = 25 , ID = 500 mA, VGS = 10 V, RGEN = 25 2N7000 10 VDD = 30 V, RL = 150 , ID = 200 mA, VGS = 10 V, RGEN = 25 2N700 NDS7002A 20 VDD = 15 V, RL = 25 , ID = 500 mA, VGS = 10 V, RGEN = 25 2N7000 10 VDD = 30 V, RL = 150 , ID = 200 mA, VGS = 10 V, RGEN = 25 2N700 NDS7002A 20 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS ISM VSD Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage 2N7002 115 NDS7002A 280 2N7002 0.8 NDS7002A 1.5 VGS = 0 V, IS = 115 mA (Note 1) 2N7002 0.88 1.5 VGS = 0 V, IS = 400 mA (Note 1) NDS7002A 0.88 1.2 mA A V Note: 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. 2N7000.SAM Rev. A1 Typical Electrical Characteristics 2N7000 / 2N7002 / NDS7002A 3 9.0 8.0 RDS(on) , NORMALIZED DRAIN -SOURCE ON-RESISTANCE VGS = 10V 7.0 1 .5 6.0 1 5.0 0 .5 4.0 I D 3.0 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 4 .5 5 .0 2 .5 6 .0 2 7 .0 8 .0 1 .5 9 .0 10 1 0 0 .4 0 .8 1 .2 I D , DRA IN CURRENT (A) 1 .6 2 Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 2 3 V GS = 10V 1.75 I D = 500m A 1.5 1.25 1 0.75 0.5 -5 0 -2 5 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C) 125 V GS = 10V 2 .5 TJ = 125C 2 1 .5 25C 1 -55C 0 .5 0 150 0 Figure 3. On-Resistance Variation with Temperature 0 .4 0 .8 1 .2 I D , DRAIN CURRENT (A) 1 .6 2 Figure 4. On-Resistance Variation with Drain Current and Temperature 2 T J = -55C Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 1 .1 VDS = 1 0 V ID , DRA IN CURRENT (A) V GS =4.0V 0 .5 5 R DS(on) , NORMALIZED R DS(ON) , NORM A LIZED DRAIN -SOURCE ON-RESISTANCE 0 DRAIN-SOURCE ON-RESISTANCE , DRA IN-SOURCE CURRENT (A) 2 25C 125C 1.6 1.2 0.8 0.4 0 0 2 V GS 4 6 8 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 10 V DS = VGS 1 .0 5 ID = 1 mA 1 0 .9 5 0 .9 0 .8 5 0 .8 -50 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (C) 125 150 Figure 6. Gate Threshold Variation with Temperature 2N7000.SAM Rev. A1 Typical Electrical Characteristics (continued) 1.1 2 I D = 250A IS , REVERSE DRA IN CURRENT (A) , NORMALIZED BV S S D DRAIN-SOURCE BREAKDOWN VOLTAGE 2N7000 / 2N7002 /NDS7002A 1.075 1.05 1.025 1 0.975 0.95 0.925 -50 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (C) 125 TJ = 125C 0 .1 25C 0 .0 5 -55C 0 .0 1 0 .0 0 5 0 .0 0 1 0 .2 150 0 .4 V SD 0 .6 0 .8 1 1 .2 , BODY DIODE FORW A RD VOLTAGE (V) 1 .4 Figure 8. Body Diode Forward Voltage Variation with Current and Temperature Figure 7. Breakdown Voltage Variation with Temperature 10 60 VGS , GATE-SOURCE VOLTAGE (V) 40 C iss CAPACITANCE (pF) V GS = 0 V 1 0 .5 20 C oss 10 5 C rss f = 1 MHz 2 V GS = 0V V DS = 2 5 V 8 6 ID = 5 0 0 m A 4 2 280m A 115m A 1 0 1 2 3 V DS 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 30 50 Figure 9. Capacitance Characteristics 0 0 .4 0 .8 1 .2 Q g , GATE CHARGE (nC) t d(on) VGS R GEN t off t on tr RL t d(off) tf 90% 90% V OUT D Output, Vout 10% 10% 90% DUT G Input, Vin S Figure 11. Switching Test Circuit 2 Figure 10. Gate Charge Characteristics VDD V IN 1 .6 Inverted 50% 50% 10% Pulse Width Figure 12. Switching Waveforms 2N7000.SAM Rev. A1 3 2 3 2 1 1 0.5 S( RD Lim ) ON 10 it 1m 10 ms 10 0m s 1s 0.1 0.05 V GS = 1 0 V s s 10 s DC SINGLE PULSE T A = 25C 0.01 0u ID , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) Typical Electrical Characteristics (continued) 10 0.5 RD O 1m 10 0.1 10 0.05 0.01 0m 1s 10 s DC VGS = 10V SINGLE PULSE T A = 25C 0u s s ms s 0.005 0.005 1 2 5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V) 60 80 1 Figure 13. 2N7000 Maximum Safe Operating Area 3 2 1 I D , DRAIN CURRENT (A) S( Li N) t mi RD S( ON im )L 10 1m 0.5 0.1 10 0.05 V GS = 1 0 V 60 80 0u s s ms s 1s 10 DC s SINGLE PULSE T A = 25C 0.01 0m 5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V) Figure 14. 2N7002 Maximum Safe Operating Area it 10 2 0.005 1 2 5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V) 60 80 Figure 15. NDS7000A Maximum Safe Operating Area TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 1 D = 0.5 0.5 R JA (t) = r(t) * R JA R JA = (See Datasheet) 0 .2 0.2 0.1 0.1 P(pk) 0.05 t1 0.05 0 .02 Single Pulse 0.02 0.01 0.0001 0.001 t2 TJ - T A = P * RJA (t) Duty Cycle, D = t1 /t2 0.01 0.01 0.1 t 1, TIME (sec) 1 10 100 300 Figure 16. TO-92, 2N7000 Transient Thermal Response Curve r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0 .2 0.1 0.05 R JA (t) = r(t) * R JA R JA = (See Datasheet) 0.1 0 .0 5 0 .0 2 P(pk) 0 .0 1 t1 0.01 t2 Single Pulse TJ - T A = P * RJA (t) Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300 Figure 17. SOT-23, 2N7002 / NDS7002A Transient Thermal Response Curve 2N7000.SAM Rev. A1 TO-92 Tape and Reel Data and Package Dimensions TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION LOT: NSID: D/C1: CBVK741B019 QTY: PN2222N See Fig 2.0 for various Reeling Styles HTB:B 10000 SPEC: D9842 SPEC REV: FSCINT Label B2 QA REV: 5 Reels per Intermediate Box (FSCINT) Customized Label F63TNR Label sample LOT: CBVK741B019 FSID: PN222N D/C1: D9842 D/C2: F63TNR Label QTY: 2000 SPEC: QTY1: QTY2: SPEC REV: CPN: N/F: F Customized Label (F63TNR)3 375mm x 267mm x 375mm Intermediate Box TO-92 TNR/AMMO PACKING INFROMATION Packing Style Quantity EOL code Reel A 2,000 D26Z E 2,000 D27Z Ammo M 2,000 D74Z P 2,000 D75Z AMMO PACK OPTION See Fig 3.0 for 2 Ammo Pack Options FSCINT Label Unit weight = 0.22 gm Reel weight with components = 1.04 kg Ammo weight with components = 1.02 kg Max quantity per intermediate box = 10,000 units 327mm x 158mm x 135mm Immediate Box Customized Label (TO-92) BULK PACKING INFORMATION EOL CODE DESCRIPTION 5 Ammo boxes per Intermediate Box Customized Label F63TNR Label 333mm x 231mm x 183mm Intermediate Box BULK OPTION LEADCLIP DIMENSION QUANTITY J18Z TO-18 OPTION STD NO LEAD CLIP 2.0 K / BOX J05Z TO-5 OPTION STD NO LEAD CLIP 1.5 K / BOX NO EOL CODE TO-92 STANDARD STRAIGHT NO LEADCLIP 2.0 K / BOX See Bulk Packing Information table Anti-static Bubble Sheets FSCINT Label 2000 units per EO70 box for std option 114mm x 102mm x 51mm Immediate Box 5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm Intermediate box Customized Label FSCINT Label 10,000 units maximum per intermediate box for std option September 1999, Rev. B TO-92 Tape and Reel Data and Package Dimensions, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option "A" (H) Machine Option "E" (J) Style "A", D26Z, D70Z (s/h) Style "E", D27Z, D71Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP ORDER STYLE D74Z (M) FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM ORDER STYLE D75Z (P) FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP September 1999, Rev. B TO-92 Tape and Reel Data and Package Dimensions, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4.0 Hd P Pd b Ha W1 d L H1 HO L1 S WO t W2 W t1 P1 F1 DO P2 PO User Direction of Feed TO-92 Reel Configuration: Figure 5.0 ITEM DESCRIPTION SYMBOL DIMENSION Base of Package to Lead Bend b 0.098 (max) Component Height Ha 0.928 (+/- 0.025) Lead Clinch Height HO 0.630 (+/- 0.020) Component Base Height H1 0.748 (+/- 0.020) Component Alignment ( side/side ) Pd 0.040 (max) Component Alignment ( front/back ) Hd 0.031 (max) Component Pitch P 0.500 (+/- 0.020) Feed Hole Pitch PO 0.500 (+/- 0.008) Hole Center to First Lead P1 0.150 (+0.009, -0.010) Hole Center to Component Center P2 0.247 (+/- 0.007) Lead Spread F1/F2 0.104 (+/- 0 .010) Lead Thickness d 0.018 (+0.002, -0.003) Cut Lead Length L 0.429 (max) Taped Lead Length L1 0.209 (+0.051, -0.052) Taped Lead Thickness t 0.032 (+/- 0.006) Carrier Tape Thickness t1 0.021 (+/- 0.006) Carrier Tape Width W 0.708 (+0.020, -0.019) Hold - down Tape Width WO 0.236 (+/- 0.012) Hold - down Tape position W1 0.035 (max) Feed Hole Position W2 0.360 (+/- 0.025) Sprocket Hole Diameter DO 0.157 (+0.008, -0.007) Lead Spring Out S 0.004 (max) Note : All dimensions are in inches. ELECT ROSTATIC SEN SITIVE D EVICES D4 D1 D2 F63TNR Label ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM Reel Diameter D1 13.975 14.025 Arbor Hole Diameter (Standard) D2 1.160 1.200 D2 0.650 0.700 Customized Label (Small Hole) W1 Core Diameter D3 3.100 3.300 Hub Recess Inner Diameter D4 2.700 3.100 Hub Recess Depth W1 0.370 0.570 Flange to Flange Inner Width W2 1.630 Hub to Hub Center Width W3 1.690 2.090 W3 W2 Note: All dimensions are inches D3 July 1999, Rev. A TO-92 Tape and Reel Data and Package Dimensions TO-92 (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.1977 January 2000, Rev. B SOT-23 Tape and Reel Data and Package Dimensions SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and some other options are described in the Packaging Information table. Antistatic Cover Tape Human Readable Label These full reels are individually labeled and placed inside a standard intermediate made of recyclable corrugated brown paper with a Fairchil d logo printing. One pizza box contains eight reels maximum. And these intermediate boxes are placed inside a labeled shipping box which comes in different sizes depending on the number of parts shipped. Embossed Carrier Tape 3P 3P 3P 3P SOT-23 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Standard (no flow code) TNR 3,000 D87Z 7" Dia 13" 187x107x183 343x343x64 Max qty per Box 24,000 30,000 Weight per unit (gm) 0.0082 0.0082 Weight per Reel (kg) 0.1175 0.4006 Reel Size Box Dimension (mm) SOT-23 Unit Orientation TNR 10,000 343mm x 342mm x 64mm Intermediate box for L87Z Option Human Readable Label Note/Comments Human Readable Label sample H uman readable Label 187mm x 107mm x 183mm Intermediate Box for Standard Option SOT-23 Tape Leader and Trailer Configuration: Figure 2.0 Carrier Tape Cover Tape Components Trailer Tape 300mm minimum or 75 empty poc kets Leader Tape 500mm minimum or 125 empty pockets September 1999, Rev. C SOT-23 Tape and Reel Data and Package Dimensions, continued SOT-23 Embossed Carrier Tape Configuration: Figure 3.0 P0 P2 D0 D1 T E1 W F E2 Wc B0 Tc A0 P1 K0 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SOT-23 (8mm) 3.15 +/-0.10 2.77 +/-0.10 W 8.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.125 +/-0.125 1.75 +/-0.10 F 6.25 min 3.50 +/-0.05 P1 P0 4.0 +/-0.1 4.0 +/-0.1 K0 T 1.30 +/-0.10 0.228 +/-0.013 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). Wc 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 5.2 +/-0.3 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SOT-23 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) 8mm 7" Dia 7.00 177.8 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 - 0.429 7.9 - 10.9 8mm 13" Dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 4.00 100 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 - 0.429 7.9 - 10.9 September 1999, Rev. C SOT-23 Tape and Reel Data and Package Dimensions, continued SOT-23 (FS PKG Code 49) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0082 September 1998, Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM SyncFETTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D