LTC4440-5
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For more information www.linear.com//LTC4440-5
Synchronous Phase-Modulated Full-Bridge Converter LTC4440-5 Driving a 1000pF Capacitive Load
Typical applicaTion
VCC
INP
GND
BOOST
TG
TS
LTC4440-5
V
IN
36V TO 60V
VCC
4V TO 15V
VCC
INP
GND
BOOST
TG
TS
LTC4440-5
LTC3722-1 • •
4440 TA01
TG-TS
2V/DIV
INP
2V/DIV
50ns/DIV
V
CC
= BOOST-TS = 5V
4440-5 TA02
FeaTures DescripTion
High Speed, High Voltage,
High Side Gate Driver
The LT C
®
4440-5 is a high frequency high side N-channel
MOSFET gate driver that is designed to operate in appli-
cations with VIN voltages up to 60V. The LTC4440-5 can
also withstand and continue to function during 80V VIN
transients. The powerful driver capability reduces switch-
ing losses in MOSFETs with high gate capacitances. The
L
TC4440-5’s pull-up has a peak output current of 1.1A and
its pull-down has an output impedance of 1.85Ω.
The LTC4440-5 features supply independent TTL/CMOS
compatible input thresholds with 350mV of hysteresis.
The input logic signal is internally level-shifted to the
bootstrapped supply, which may function at up to 95V
above ground.
The LTC4440-5 is optimized for driving (5V) logic level
FETs and contains an undervoltage lockout circuit that
disables the external MOSFET when activated.
The LTC4440-5 is available in the low profile (1mm)
SOT-23 or a thermally enhanced 8-lead MSOP package.
PARAMETER LTC4440-5 LTC4440A-5 LTC4440
Max Operating TS 60V 80V 80V
Absolute Max TS 80V 100V 100V
MOSFET Gate Drive 4V to 15V 4V to 15V 8V to 15V
VCC UV+3.2V 3.2V 6.3V
VCC UV–3.04V 3.04V 6.0V
applicaTions
n Wide Operating VIN Range: Up to 60V
n Rugged Architecture Tolerant of 80V VIN Transients
n Powerful 1.85Ω Driver Pull-Down (with 6V Supply)
n Powerful 1.1A Peak Current Driver Pull-Up
(with 6V Supply)
n 7ns Fall Time Driving 1000pF Load
n 10ns Rise Time Driving 1000pF Load
n Drives Standard Threshold MOSFETs
n TTL/CMOS Compatible Inputs with Hysteresis
n Input Thresholds are Independent of Supply
n Undervoltage Lockout
n Low Profile (1mm) SOT-23 (ThinSOT™) and
Thermally Enhanced 8-Pin MSOP Packages
n Telecommunications Power Systems
n Distributed Power Architectures
n Server Power Supplies
n High Density Power Modules
n General Purpose Low-Side Driver
L, LT, LTC, LTM, Linear Technology, the Linear logo and PolyPhase are registered trademarks
and ThinSOT is a trademark of Linear Technology Corporation. All other trademarks are the
property of their respective owners. Protected by U.S. Patents, including 6677210.
LTC4440-5
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For more information www.linear.com/LTC4440-5
absoluTe MaxiMuM raTings
(Note 1)
Supply Voltage
VCC ........................................................ –0.3V to 15V
BOOST – TS ........................................... –0.3V to 15V
INP Voltage ................................................ –0.3V to 15V
BOOST Voltage (Continuous) ..................... –0.3V to 85V
BOOST Voltage (100ms) ............................ –0.3V to 95V
TS Voltage (Continuous) ............................... –5V to 70V
TS Voltage (100ms) ...................................... –5V to 80V
Peak Output Current < 1µs (TG) ..................................4A
Operating Ambient Temperature Range
(Note 2) ...............................................–40°C to 85°C
Junction Temperature (Note 3) ............................. 125°C
Storage Temperature Range .................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec) ................... 300°C
elecTrical characTerisTics
The ● denotes specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = VBOOST = 6V, VTS = GND = 0V, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Main Supply (VCC)
IVCC DC Supply Current
Normal Operation
UVLO
INP = 0V
VCC < UVLO Threshold (Falling) – 0.1V
200
18
325
40
µA
µA
UVLO Undervoltage Lockout Threshold VCC Rising
VCC Falling
Hysteresis
l
l
2.75
2.60
3.20
3.04
160
3.65
3.50
V
V
mV
Bootstrapped Supply (BOOST – TS)
IBOOST DC Supply Current
Normal Operation
INP = 0V
INP = 6V
0
310
450
µA
µA
orDer inForMaTion
LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE
LTC4440EMS8E-5#PBF LTC4440EMS8E-5#TRPBF LTBRG 8-Lead Plastic MSOP –40°C to 85°C
LTC4440ES6-5#PBF LTC4440ES6-5#TRPBF LTBRF 6-Lead Plastic SOT-23 –40°C to 85°C
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Consult LTC Marketing for information on nonstandard lead based finish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
1
2
3
4
INP
GND
VCC
GND
8
7
6
5
TS
TG
BOOST
NC
TOP VIEW
9
MS8E PACKAGE
8-LEAD PLASTIC MSOP
TJMAX = 125°C, θJA = 40°C/W
EXPOSED PAD (PIN 9) IS GND, MUST BE SOLDERED TO PCB
VCC 1
GND 2
INP 3
6 BOOST
5 TG
4 TS
TOP VIEW
S6 PACKAGE
6-LEAD PLASTIC SOT-23
TJMAX = 125°C, θJA = 230°C/W
pin conFiguraTion
LTC4440-5
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For more information www.linear.com//LTC4440-5
elecTrical characTerisTics
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Input Signal (INP)
VIH High Input Threshold INP Ramping High l1.2 1.6 2 V
VIL Low Input Threshold INP Ramping Low l0.8 1.25 1.6 V
VIH – VIL Input Voltage Hysteresis 0.350 V
IINP Input Pin Bias Current ±0.01 ±2 µA
Output Gate Driver (TG)
VOH High Output Voltage ITG = –10mA, VOH = VBOOST – VTG 0.7 V
VOL Low Output Voltage ITG = 100mA l185 275 mV
IPU Peak Pull-Up Current l0.75 1.1 A
RDS Output Pull-Down Resistance l1.85 2.75 Ω
Switching Timing
trOutput Rise Time 10% – 90%, CL = 1nF
10% – 90%, CL = 10nF
10
100
ns
ns
tfOutput Fall Time 10% – 90%, CL = 1nF
10% – 90%, CL = 10nF
7
70
ns
ns
tPLH Output Low-High Propagation Delay l35 65 ns
tPHL Output High-Low Propagation Delay l33 65 ns
The ● denotes specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = VBOOST = 6V, VTS = GND = 0V, unless otherwise noted.
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: The LTC4440-5 is guaranteed to meet performance specifications
from 0°C to 85°C. Specifications over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
Note 3: TJ is calculated from the ambient temperature TA and power
dissipation PD according to the following formula:
TJ = TA + (PD • θJA°C/W)
Note 4: Failure to solder the exposed back side of the MS8E package to the
PC board will result in a thermal resistance much higher than 40°C/W.
Typical perForMance characTerisTics
VCC Supply Quiescent Current
vs Voltage
BOOST-TS Supply Quiescent
Current vs Voltage
Output Low Voltage (VOL)
vs Supply Voltage
VCC SUPPLY VOLTAGE (V)
0
350
300
250
200
150
100
50
0
4440-5 G01
510
15
QUIESCENT CURRENT (µA)
INP = GND
INP = VCC
BOOST-TS SUPPLY VOLTAGE (V)
0
QUIESCENT CURRENT (µA)
150
200
250
15
4440-5 G02
100
50
05 10
300
350
400
INP = VCC
BOOST-TS SUPPLY VOLTAGE (V)
3
0
OUTPUT (TG-TS) VOLTAGE (mV)
50
100
150
200
300
57 9 11
4440-5 G03
134 68 10 12 14
15
250
LTC4440-5
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For more information www.linear.com/LTC4440-5
Typical perForMance characTerisTics
VCC Supply Current
vs Temperature
VCC Undervoltage Lockout
Thresholds vs Temperature
BOOST-TS Quiescent Current
vs Temperature
Input (INP) Threshold
vs Temperature
Input Threshold Hysteresis
vs Temperature
Peak Driver (TG) Pull-Up Current
vs Temperature
Output High Voltage (VOH)
vs Supply Voltage
Input (INP) Thresholds
vs Supply Voltage 2MHz Operation
BOOST-TS SUPPLY VOLTAGE (V)
4
HIGH OUTPUT VOLTAGE (V)
10
12
14
15
4440-5 G04
6
056789 10 11 12 13 14
16
8
4
2
ITG = 1mA
ITG = 100mA
ITG = 10mA
TEMPERATURE (°C)
–55
0.8
INPUT THRESHOLD (V)
1.0
1.4
1.6
1.8
–15 25
VIH
VIL
45
125
4440-5 G11
1.2
–35 5 65 85 105
2.0
VCC SUPPLY VOLTAGE (V)
5
INPUT THRESHOLD (V)
1.2
1.6
2.0
13
4440-5 G05
0.8
0.4
1.0
1.4
1.8
0.6
0.2
07911
64 14
810 12
15
VIH
VIL
TEMPERATURE (°C)
–55
2.5
UVLO THRESHOLD VOLTAGE (V)
2.6
2.8
2.9
3.0
3.5
3.2
–15 25 45
125
4440-5 G09
2.7
3.3
3.4
3.1
–35 5 65 85 105
RISING
FALLING
TEMPERATURE (°C)
–55
HYSTERESIS (V
IH
-V
IL
) (mV)
340
350
360
105
4440-5 G12
330
320
300 –15 25 65
–35
125
545 85
310
380
370
INPUT
(INP)
5V/DIV
OUTPUT
(TG)
5V/DIV
VCC = BOOST-TS = 12V
250ns/DIV
4440-5 G07
TEMPERATURE (°C)
–55
QUIESCENT CURRENT (µA)
200
250
300
105
4440-5 G10
150
100
0–15 25 65
–35
125
545 85
50
400
350
TEMPERATURE (°C)
–55 –35 –15 5 25 45 65 85 105
125
0
PEAK CURRENT (A)
0.5
1.0
1.5
3.5
4440-5 G13
2.0
2.5
3.0
BOOST-TS = 15V
BOOST-TS = 12V
BOOST-TS = 6V
BOOST-TS = 4V
TEMPERATURE (°C)
–55
0
QUIESCENT CURRENT (µA)
50
150
200
250
–15 25 45
125
4440-5 G08
100
–35 5 65 85 105
INP = VCC
INP = GND
LTC4440-5
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For more information www.linear.com//LTC4440-5
Typical perForMance characTerisTics
Driving a 3300pF Capacitive Load Driving a 3300pF Capacitive Load
Output Driver Pull-Down
Resistance vs Temperature Propagation Delay vs Temperature
TEMPERATURE (°C)
–55
0
R
DS
(Ω)
0.5
1.5
2.0
2.5
–15 25 45
125
4440-5 G14
1.0
–35 5 65 85 105
3.0
BOOST-TS = 4V
BOOST-TS = 15V
BOOST-TS = 12V
BOOST-TS = 6V
TEMPERATURE (°C)
–55
20
PROPAGATION DELAY (ns)
25
35
40
45
–15 25 45
125
4440-5 G15
30
–35 5 65 85 105
50
VCC = BOOST = 6V
tPLH
tPHL
TG-TS
2V/DIV
INP
2V/DIV
50ns/DIV
V
CC
= BOOST-TS = 5V
4440-5 G16
TG-TS
5V/DIV
INP
2V/DIV
50ns/DIV
VCC = BOOST-TS = 12V
4440-5 G17
pin FuncTions
VCC (Pin 1): Chip Supply. This pin powers the internal low
side circuitry. A low ESR ceramic bypass capacitor should
be tied between this pin and the GND pin (Pin 2).
GND (Pin 2): Chip Ground.
INP (Pin 3): Input Signal. TTL/CMOS compatible input
referenced to GND (Pin 2).
TS (Pin 4): Top (High Side) source connection or GND if
used in ground referenced applications.
TG (Pin 5): High Current Gate Driver Output (Top Gate).
This pin swings between TS and BOOST.
BOOST (Pin 6): High Side Bootstrapped Supply. An ex-
ternal capacitor should be tied between this pin and TS
(Pin4). Normally, a bootstrap diode is connected between
VCC (Pin1) and this pin. Voltage swing at this pin is from
VCC– VD to VIN + VCC – VD, where VD is the forward volt-
age drop of the bootstrap diode.
SOT-23 Package
LTC4440-5
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For more information www.linear.com/LTC4440-5
pin FuncTions
block DiagraM
TiMing DiagraM
INP (Pin 1): Input Signal. TTL/CMOS compatible input
referenced to GND (Pin 2).
GND (Pins 2, 4): Chip Ground.
VCC (Pin 3): Chip Supply. This pin powers the internal low
side circuitry. A low ESR ceramic bypass capacitor should
be tied between this pin and the GND pin (Pin 2).
NC (Pin 5): No Connect. No connection required. For
convenience, this pin may be tied to Pin 6 (BOOST) on
the application board.
BOOST (Pin 6): High Side Bootstrapped Supply. An external
capacitor should be tied between this pin and TS (Pin8).
Normally, a bootstrap diode is connected between VCC
(Pin3) and this pin. Voltage swing at this pin is from VCC
– VD to VIN + VCC – VD, where VD is the forward voltage
drop of the bootstrap diode.
TG (Pin 7): High Current Gate Driver Output (Top Gate).
This pin swings between TS and BOOST.
TS (Pin 8): Top (High Side) source connection or GND if
used in ground referenced applications.
Exposed Pad (Pin 9): Ground. Must be electrically con-
nected to Pins 2 and 4 and soldered to PCB ground for
optimum thermal performance.
Exposed Pad MS8E Package
BOOST
TS
GND
TG
BOOST
44405 BD
VIN
UP TO 60V,
TRANSIENT
UP TO 80V
TS
UNDERVOLTAGE
LOCKOUT
LEVEL SHIFTER
VCC
4V TO 15V
GND
INP
VIH
90%
10%
tr
INPUT (INP)
OUTPUT (TG)
INPUT RISE/FALL TIME <10ns
VIL
tf
t
PLH 4440 TD
t
PHL
LTC4440-5
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For more information www.linear.com//LTC4440-5
applicaTions inForMaTion
Figure 1. Capacitance Seen by TG During Switching
Overview
The LTC4440-5 receives a ground-referenced, low voltage
digital input signal to drive a high side N-channel power
MOSFET whose drain can float up to 80V above ground,
eliminating the need for a transformer between the low
voltage control signal and the high side gate driver. The
LTC4440-5 normally operates in applications with input
supply voltages (VIN) up to 60V, but is able to withstand
and continue to function during 80V, 100ms transients
on the input supply.
The powerful output driver of the LTC4440-5 reduces the
switching losses of the power MOSFET, which increase
with transition time. The LTC4440-5 is capable of driv-
ing a 1nF load with 10ns rise and 7ns fall times using a
bootstrapped supply voltage VBOOST–TS of 6V.
Input Stage
The LTC4440-5 employs TTL/CMOS compatible input logic
level or thresholds that allow a low voltage digital signal to
drive standard threshold power MOSFETs. The LTC4440-5
contains an internal voltage regulator that biases the input
buffer, allowing the input thresholds (VIH = 1.6V, VIL =
1.25V) to be relatively independent of variations in VCC.
The 350mV hysteresis between VIH and VIL eliminates
false triggering due to noise during switching transitions.
However, care should be taken to keep this pin from any
noise pickup, especially in high frequency, high voltage
applications. The LTC4440-5 input buffer has a high input
impedance and draws negligible input current, simplifying
the drive circuitry required for the input.
Output Stage
A simplified version of the LTC4440-5’s output stage is
shown in Figure 1. The pull-down device is an N-channel
MOSFET (N1) and the pull-up device is an NPN bipolar
junction transistor (Q1). The output swings from the lower
rail (TS) to within an NPN VBE (~0.7V) of the positive rail
(BOOST). This large voltage swing is important in driv-
ing external power MOSFETs, whose RDS(ON) is inversely
proportional to its gate overdrive voltage (VGS – VTH).
The LTC4440-5’s peak pull-up (Q1) current is 1.1A while
the pull-down (N1) resistance is 1.85Ω, with a BOOST-
TS supply of 6V. The low impedance of N1 is required to
discharge the power MOSFET’s gate capacitance during
high-to-low signal transitions. When the power MOSFET’s
gate is pulled low (gate shorted to source through N1) by
the LTC4440-5, its source (TS) is pulled low by its load
(e.g., an inductor or resistor). The slew rate of the source/
gate voltage causes current to flow back to the MOSFET’s
gate through the gate-to-drain capacitance (CGD). If the
MOSFET driver does not have sufficient sink current ca-
pability (low output impedance), the current through the
power MOSFET’s CGD can momentarily pull the gate high,
turning the MOSFET back on.
A similar scenario exists when the LTC4440-5 is used
to drive a low side MOSFET. When the low side power
MOSFET’s gate is pulled low by the LTC4440-5, its drain
voltage is pulled high by its load (e.g., inductor or resis-
tor). The slew rate of the drain voltage causes current to
flow back to the MOSFET’s gate through its gate-to-drain
capacitance. If the MOSFET driver does not have sufficient
sink current capability (low output impedance), the current
through the power MOSFET’s CGD can momentarily pull
the gate high, turning the MOSFET back on.
Rise/Fall Time
Since the power MOSFET generally accounts for the ma-
jority of the power loss in a converter, it is important to
quickly turn it on or off, thereby minimizing the transition
time in its linear region. The LTC4440-5 can drive a 1nF
load with a 10ns rise time and 7ns fall time.
The LTC4440-5’s rise and fall times are determined by the
peak current capabilities of Q1 and N1. The predriver that
drives Q1 and N1 uses a nonoverlapping transition scheme
to minimize cross-conduction currents. N1 is fully turned
off before Q1 is turned on and vice versa.
BOOST V
IN
UP TO 100V
TS V
–
TG
CGD
POWER
MOSFET
LOAD
INDUCTOR
CGS
4440 F01
LTC4440-5
Q1
N1
LTC4440-5
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For more information www.linear.com/LTC4440-5
applicaTions inForMaTion
Power Dissipation
To ensure proper operation and long-term reliability,
the LTC4440-5 must not operate beyond its maximum
temperature rating. Package junction temperature can
be calculated by:
TJ = TA + PD (θJA)
where:
TJ = Junction Temperature
TA = Ambient Temperature
PD = Power Dissipation
θJA = Junction-to-Ambient Thermal Resistance
Power dissipation consists of standby and switching
power losses:
PD = PSTDBY + PAC
where:
PSTDBY = Standby Power Losses
PAC = AC Switching Losses
The LTC4440-5 consumes very little current during standby.
The DC power loss at VCC = 6V and VBOOST–TS = 6V is only
(200µA)(6V) = 1.2mW with INP = 0V.
AC switching losses are made up of the output capacitive
load losses and the transition state losses. The capacitive
load losses are primarily due to the large AC currents
needed to charge and discharge the load capacitance dur-
ing switching. Load losses for the output driver driving a
pure capacitive load COUT would be:
Load Capacitive Power = (COUT)(f)(VBOOST–TS)2
The power MOSFET’s gate capacitance seen by the driver
output varies with its VGS voltage level during switching.
A power MOSFET’s capacitive load power dissipation can
be calculated using its gate charge, QG. The QG value
corresponding to the MOSFET’s VGS value (VCC in this
case) can be readily obtained from the manufacturer’s
QG vs VGS curves:
Load Capacitive Power (MOS) = (VBOOST–TS)(QG)(f)
Transition state power losses are due to both AC currents
required to charge and discharge the driver’s internal
nodal capacitances and cross-conduction currents in the
internal gates.
Undervoltage Lockout (UVLO)
The LTC4440-5 contains an undervoltage lockout detec-
tor that monitors VCC. When VCC falls below 3.04V, the
internal buffer is disabled and the output pin TG is pulled
down to TS.
Bypassing and Grounding
The LTC4440-5 requires proper bypassing on the VCC
and VBOOST–TS supplies due to its high speed switching
(nanoseconds) and large AC currents (Amperes). Careless
component placement and PCB trace routing may cause
excessive ringing and under/overshoot.
To obtain the optimum performance from the LTC4440-5:
A. Mount the bypass capacitors as close as possible
between the VCC and GND pins and the BOOST and
TS pins. The leads should be shortened as much as
possible to reduce lead inductance.
B. Use a low inductance, low impedance ground plane
to reduce any ground drop and stray capacitance.
Remember that the LTC4440-5 switches >2A peak
currents and any significant ground drop will degrade
signal integrity.
C. Plan the power/ground routing carefully. Know where
the large load switching current is coming from and
going to. Maintain separate ground return paths for
the input pin and the output power stage.
D. Keep the copper trace between the driver output pin
and the load short and wide.
E. When using the MS8E package, be sure to solder the
exposed pad on the back side of the LTC4440-5 package
to the board. Correctly soldered to a 2500mm2 double-
sided 1oz copper board, the LTC4440-5 has a thermal
resistance of approximately 40°C/W. Failure to make
good thermal contact between the exposed back side
and the copper board will result in thermal resistances
far greater than 40°C/W.
LTC4440-5
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For more information www.linear.com//LTC4440-5
Typical applicaTions
18
10
911
12V
VIN
12
LTC3722EGN-1
PDLY OUTF OUTE
COMPSSPGNDGND
CS
VIN
SBUS
UVLO
1µF
ADLY
330pF
MMBT3904
2.2nF
100k D12
5.1V
T3
1(1.5mH):0.5
T1
5(105µH):1:1
T2
5:5(105µH):1:1
2.49k
9.53k
10k
2.7k
470Ω
1/4W
L4
1mH
C3
68µF
20V
VH
•
•
16
15
8
1 9
5
4
150Ω
0.02Ω
1.5W
30.1k
220pF
100Ω
330Ω
1.10k 909Ω
4.87k
1/4W
4.87k
1/4W
51Ω
2W
220pF
182k
20k
1/4W
220pF
4.99k
20k
180pF
68nF
220pF0.47µF
150k
SYNC PVCC
CSE+
LTC3901EGN
CSE–
8
6 5
1
4 10 13 7 1µF
1µF
4440 TA03
–VOUT
VOUT
–VOUT
D10
10V
VOUT
ME ME2
GND PGND GND2 PGND2 TIMER
VCC
330pF
2 3
1.10k 909Ω
39.2k 100Ω
1k
CSF+
–VOUT
VOUT
VOUT
–VOUT
VOUT
12V/35A
–VOUT
CSF–
11 12
MF MF2
14 15 16
22nF
Si7852DP
×4
Si7852DP
×4
Si7852DP
×2
L1
1.3µH
114
2
12V D7
D8
4
2
1
6
•
••••
•••
10
8
7
+
1
0.22µF
Si7852DP
×2
3
6
7
824
A
D2
LTC4440-5EMS8E
BOOSTINP
TG
TSGNDGND
VCC
12V
1
0.22µF
Si7852DP
×2
3
6
7
8
12VD
24
C
D3
D4 D5
51Ω
2W
0.47µF
100V
LTC4440-5EMS8E
BOOSTINP
TG
TSGNDGND
VCC
12V
1µF
100V
×4
VIN
VIN
–VIN
36V TO 60V
1µF
100V
17
D
OUTD
19
10Ω 10Ω
C
OUTC
20
B
OUTB
21
A
OUTA
C1, C2
180µF
16V
×2
+
1µF
0.47µF, 100V TDK C3216X7R2A474M
1µF, 100V TDK C4532X7R2A105M
C1, C2: SANYO 16SP180M
C3: AVX TPSE686M020R0150
C4: MURATA DE2E3KH222MB3B
D1, D4-D6: MURS120T3
D2, D3, D7, D8: BAS21
D9: MMBZ5226B
D10: MMBZ5240B
D11: BAT54
D12: MMBZ231B
L1: SUMIDA CDEP105-1R3MC-50
L2: PULSE PA0651
L3: PA1294.910
L4: COILCRAFT DO1608C-105
Q1, Q2: ZETEX FMMT619
Q3, Q4: ZETEX FMMT718
T1, T2: PULSE PA0526
T3: PULSE PA0785
6
3
422236
33k
5 7
D11
8.25k
ISNS 5VREF
ISNS
0.1µF
5 8
1
21
MOC207
C4
2.2nF
250V
0.047µF 3
65
8
GND-F
V+
GND-S
COLL REF
LT1431CS8
1.1k
22Ω
200k
750Ω
100Ω
D9 3.3V
0.02Ω
1.5W
VH
D1
D6
13k
1/2W
0.47µF
100V
820pF
200V
L3
0.85µH
15Ω
1W
0.47µF
100V
Si7852DP
×2
12VB
Q1
Q3
Q2
Q4
11
10
8
7
MMBT3904
FBSPRG RLEB
10k
13
SYNC
5.1k
1
NC
8
DPRG
2
VREF
5VREF
14
CT
24
L2
150nH
•
LTC3722/LTC4440-5 420W 36V-60VIN to 12V/35A Isolated Full-Bridge Supply
LTC4440-5
10
44405fb
For more information www.linear.com/LTC4440-5
Typical applicaTions
LTC3723-1 240W 42-56VIN to 12V/20A Isolated 1/4Brick (2.3" × 1.45")
5
46
AB
12V
VIN
15
LTC3723EGN-1
DRVB SDRB SDRA
COMP
CS
VCC
UVLO
9
150k
1
0.47µF
1µF
DRVA
DPRG VREF
SPRGGND SSFB CT
330pF
22nF
100k D8
10V
68nF
270pF
T2
1(1.5mH):0.5
T1
4T:6T(65µHMIN):6T:2T:2T
243k
2.49k
9.53k
10k
750Ω
1k
100Ω
1/4W
813
3
Si7370DP
×2
L4
1mH
C3
68µF
20V
VFD2
•
•
3
2
8
1 9
5
4
16
10k
33k
200Ω
1/4W
R1
0.03Ω
1.5W
66.5k
RLEB
127 14
220pF
22nF
100Ω
665Ω
1k 866Ω
6.19k
1/4W
1.5nF
464k
30k
1/4W
SYNC PVCC
CSF+
VF
LTC3901EGN
CSF–
8
11 12
1
4 10 13 7
22nF
1µF
4.7µF
4440 TA05
–VOUT
VOUT
–VOUT
D7
10V
VOUT
MF MF2
GND PGND GND2 PGND2 TIMER
VCC
470pF
14 15
1k 866Ω
42.2k 1k
100Ω
6.19k
1/4W
CSE+
VE–VOUT
VOUT
V
F
VOUT
12V/20A
–VOUT
CSE–
6 5
ME ME2
2 3 16
Si7370DP
×2
Si7852DPSi7852DP
L5
0.56µH
112
4
12V D5
D6
3
5
1
6
•
••
•
•
9
7
VE
+
0.1µF
Si7852DP
1
6
5
4
B
2
A
D3
LTC4440-5ES6
BOOSTINP
TG
TSGND
VCC
12V
3
0.1µF
Si7852DP
1
6
5
42
B
D4
LTC4440-5ES6
BOOSTINP
TG
TSGND
VCC
12V
1µF
100V
×3
VIN
VIN
–VIN
42V TO 56V 1µF
100V
C1, C2
47µF
16V
×2
+
1µF
1µF
100V
1k
1/4W
1µF, 100V TDK C3225X7R2A105M
C1, C2: SANYO 16TQC47M
C3: AVX TPSE686M020R0150
C4: MURATA GHM3045X7R222K-GC
D2: DIODES INC. ES1B
D3-D6: BAS21
D7, D8: MMBZ5240B
L4: COILCRAFT DO1608C-105
L5: COILCRAFT DO1813P-561HC
L6: PULSE PA1294.132 OR
PANASONIC ETQP1H1R0BFA
R1, R2: IRC LRC2512-R03G
T1: PULSE PA0805.004
T2: PULSE PA0785
6
10
ISNS
ISNS
0.1µF
11
5 8
1
21
MOC207
C4
2.2nF
250V
0.1µF 3
65
8
GND-F
V+
GND-S
COLL REF
LT1431CS8
A
1.5k
22Ω
4.7Ω4.7Ω
R2
0.03Ω
1.5W
VE
470pF
100V
L6
1.25µH
10Ω
1W
6
93
EFFICIENCY (%)
94
95
96
97
8 10 12
LOAD CURRENT (A)
14 16 18 20
42VIN
48VIN
56VIN
MMBT3904
•
LTC4440-5
11
44405fb
For more information www.linear.com//LTC4440-5
package DescripTion
Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings.
MSOP (MS8E) 0213 REV K
0.53 ±0.152
(.021 ±.006)
SEATING
PLANE
NOTE:
1. DIMENSIONS IN MILLIMETER/(INCH)
2. DRAWING NOT TO SCALE
3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
4. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS.
INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
5. LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAX
6. EXPOSED PAD DIMENSION DOES INCLUDE MOLD FLASH. MOLD FLASH ON E-PAD
SHALL NOT EXCEED 0.254mm (.010") PER SIDE.
0.18
(.007)
0.254
(.010)
1.10
(.043)
MAX
0.22 – 0.38
(.009 – .015)
TYP
0.86
(.034)
REF
0.65
(.0256)
BSC
0° – 6° TYP
DETAIL “A”
DETAIL “A”
GAUGE PLANE
1 2 34
4.90 ±0.152
(.193 ±.006)
8
8
1
BOTTOM VIEW OF
EXPOSED PAD OPTION
765
3.00 ±0.102
(.118 ±.004)
(NOTE 3)
3.00 ±0.102
(.118 ±.004)
(NOTE 4)
0.52
(.0205)
REF
1.68
(.066)
1.88
(.074)
5.10
(.201)
MIN
3.20 – 3.45
(.126 – .136)
1.68 ±0.102
(.066 ±.004)
1.88 ±0.102
(.074 ±.004) 0.889 ±0.127
(.035 ±.005)
RECOMMENDED SOLDER PAD LAYOUT
0.65
(.0256)
BSC
0.42 ±0.038
(.0165 ±.0015)
TYP
0.1016 ±0.0508
(.004 ±.002)
DETAIL “B”
DETAIL “B”
CORNER TAIL IS PART OF
THE LEADFRAME FEATURE.
FOR REFERENCE ONLY
NO MEASUREMENT PURPOSE
0.05 REF
0.29
REF
MS8E Package
8-Lead Plastic MSOP, Exposed Die Pad
(Reference LTC DWG # 05-08-1662 Rev K)
LTC4440-5
12
44405fb
For more information www.linear.com/LTC4440-5
package DescripTion
Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings.
1.50 – 1.75
(NOTE 4)
2.80 BSC
0.30 – 0.45
6 PLCS (NOTE 3)
DATUM ‘A’
0.09 – 0.20
(NOTE 3) S6 TSOT-23 0302
2.90 BSC
(NOTE 4)
0.95 BSC
1.90 BSC
0.80 – 0.90
1.00 MAX 0.01 – 0.10
0.20 BSC
0.30 – 0.50 REF
PIN ONE ID
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
3.85 MAX
0.62
MAX
0.95
REF
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
1.4 MIN
2.62 REF
1.22 REF
S6 Package
6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
LTC4440-5
13
44405fb
For more information www.linear.com//LTC4440-5
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
revision hisTory
REV DATE DESCRIPTION PAGE NUMBER
B 1013 Added comparison table 1
(Revision history begins at Rev B)
LTC4440-5
14
44405fb
For more information www.linear.com/LTC4440-5
LINEAR TECHNOLOGY CORPORATION 2005
LT 1013 REV B • PRINTED IN USA
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com/LTC4440-5
relaTeD parTs
Typical applicaTion
240W 42V-56VIN to Unregulated 12V Half-Bridge Converter
5
46
A
B
11V12VVIN
MMBT3904
15
LTC3723EGN-2
DRVB SDRB
SDRA
COMP
VCC
UVLO
12
62k
330pF
12V
MMBZ5242B
150pF
1
0.47µF
1µF
DRVA
DPRG VREF RAMP SPRG GND SSCS FBCT
470pF 0.47µF 4.7k
0.22µF
2N7002
BCS+
T3
1(1.5mH):0.5
T1
5:4:4:2:2
1µF 89 13
1k
22Ω 0.1µF
C1
2.2nF
250V
1µF
100V
1µF
100V
1µF
100V
1µF
100V
0.22µF
Si7370DP
×2
Si7852DP
×2
1
6
5
42
3
A
Si7370DP
×2
1500pF
100V
L2 0.22µH
L3
1mH
C3
68µF
VF
•
•
11
3
2
8
1 9
5
4
16
10k
120Ω
30.1k
7 10 14
7.5Ω
D4 D5
7.5Ω
220pF
100Ω
10k 3k
4.7k
1/4W
100pF
215k
15k
1/4W SYNC PVCC
CSF+
VF
LTC3901EGN
CSF–
8
11 12
1
4 10 13 7 1µF
1µF
4440 TA04
–VOUT
10V
MMBZ5240B
1k
VOUT
MF MF2
GND PGND GND2 PGND2 TIMER
VCC
330pF
14 15
10k 3k
33.2k 100Ω
4.7k
1/4W
CSE+
VE
20Ω 1W
–VOUT
VOUT
VOUT
–VOUT
CSE–
6 5
ME ME2
2 3 16
MMBT3904
Si7852DP
×2
L1
0.56µH
72
4
CS+
T2
70(980µH):1
8
7
1
3
12V D2
D1
D3
3
5
1
6
•
••
•
•
•
•
9
11
VE
+
LTC4440-5ES6
BOOSTINP
TG
TSGND
VCC
11V
1µF
100V
VIN
VIN
–VIN
48VIN 1µF
100V
C2
180µF
16V
+
1µF
1µF, 100V TDK C4532X7R2A105M
C1: MURATA DE2E3KH222MB3B
C2: SANYO 16SP180M
C3: AVX TPSE686M020R0150
D1-D3: BAS21
D4, D5: MMBD914
L1: COILCRAFT DO1813P-561HC
L2: SUMIDA CDEP105-0R2NC-50
L3: COILCRAFT DO1608C-105
T1: PULSE PA0801.005
T2: PULSE P8207
T3: PULSE PA0785
PART NUMBER DESCRIPTION COMMENTS
LT
®
1161 Quad Protected High Side MOSFET Driver 8V to 48V Supply Range, tON = 200µs, tOFF = 28µs
LTC1693 Family High Speed Dual MOSFET Drivers 1.5A Peak Output Current, 4.5V ≤ VIN ≤ 13.2V
LT1952 Single Switch Synchronous Forward Controller 25W to 500W DC/DC Controller
LT3010/LT3010-5 50mA, 3V to 80V Low Dropout Micropower Regulators Low Quiescent Current (30µA), Stable with Small (1µF) Ceramic Capacitor
LT3430 High Voltage, 3A, 200kHz Step-Down Switching Regulator Input Voltages Up to 60V, Internal 0.1Ω Power Switch, Current Mode
Architecture, 16-Pin Exposed Pad TSSOP Package
LTC3722-1/
LTC3722-2
Synchronous Dual Mode Phase Modulated Full-Bridge
Controllers
Adaptive Zero Voltage Switching, High Output Power Levels
(Up to Kilowatts)
LTC3723-1/
L
TC3723-2
Synchronous Push-Pull PWM Controllers Current Mode or Voltage Mode Push-Pull Controllers
LTC3900 Synchronous Rectifier Driver for Forward Converters Programmable Time Out, Reverse Inductor Current Sense
LTC3901 Secondary Side Synchronous Driver for Push-Pull and
Full-Bridge Converters
Programmable Time Out, Reverse Inductor Current Sense
LTC4440 High Speed, High Voltage, High Side Gate Driver High Side Source up to 100V, 8V to 15V Gate Drive Supply,
Undervoltage Lockout, 6-Lead ThinSOT or 8-Lead Exposed MSOP Package
LTC4441 6A MOSFET Driver Adjustable Gate Drive from 5V to 8V
, 5V ≤ VIN ≤ 28V
