Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 11
1Publication Order Number:
P6SMB11CAT3/D
P6SMB11CAT3 Series,
SZP6SMB11CAT3 Series
600 Watt Peak Power Zener
Transient Voltage Suppressors
Bidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
SURMETIC package and is ideally suited for use in
communication systems, automotive, numerical controls, process
controls, medical equipment, business machines, power supplies and
many other industrial/consumer applications.
Features
Working Peak Reverse Voltage Range − 9.4 to 77.8 V
Standard Zener Breakdown Voltage Range − 11 to 91 V
Peak Power − 600 W @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 mA Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available**
Mechanical Characteristics:
CASE: Void-Free, Transfer-Molded, Thermosetting Plastic
FINISH: All External Surfaces are Corrosion Resistant and Leads are
Readily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
LEADS: Modified L−Bend Providing More Contact Area to Bond Pads
POLARITY: Polarity Band Will Not be Indicated
MOUNTING POSITION: Any
*Please see P6SMB6.8AT3 to P6SMB200AT3 for Unidirectional devices.
**For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
9.4−78 VOLTS
600 WATT PEAK POWER
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
Device Package Shipping†
ORDERING INFORMATION
P6SMBxxCAT3 SMB 2,500 /
Tape & Reel
SMB
CASE 403A
PLASTIC
MARKING DIAGRAM
http://onsemi.com
AYWW
xxC G
G
xxC = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
P6SMBxxCAT3G SMB
(Pb−Free)
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
The “T3” suffix refers to a 13 inch reel.
SZP6SMBxxCAT3G SMB
(Pb−Free)
2,500 /
Tape & Reel
P6SMB11CAT3 Series, SZP6SMB11CAT3 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1) @ TL = 25C, Pulse Width = 1 ms PPK 600 W
DC Power Dissipation @ TL = 75C Measured Zero Lead Length (Note 2)
Derate Above 75C
Thermal Resistance, Junction−to−Lead
PD
RqJL
3.0
40
25
W
mW/C
C/W
DC Power Dissipation (Note 3) @ TA = 25C
Derate Above 25C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
0.55
4.4
226
W
mW/C
C/W
Operating and Storage Temperature Range TJ, Tstg −65 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive
2. 1 square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
QVBR Maximum Temperature Coefficient of VBR Bi−Directional TVS
IPP
IPP
V
I
IR
IT
IT
IR
VRWM
VCVBR
VRWM VC
VBR
ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Device*
Device
Marking
VRWM
(Note 4)
IR @
VRWM
Breakdown Voltage VC @ IPP (Note 6)
QVBR
Ctyp
(Note 7)
VBR Volts (Note 5) @ ITVCIPP
Volts mAMin Nom Max mA Volts Amps %/C pF
P6SMB11CAT3, G
P6SMB12CAT3, G
P6SMB13CAT3, G
11C
12C
13C
9.4
10.2
11.1
5
5
5
10.5
11.4
12.4
11.05
12
13.05
11.6
12.6
13.7
1
1
1
15.6
16.7
18.2
38
36
33
0.075
0.078
0.081
865
800
740
P6SMB15CAT3, G
P6SMB16CAT3, G
P6SMB18CAT3, G
P6SMB20CAT3, G
15C
16C
18C
20C
12.8
13.6
15.3
17.1
5
5
5
5
14.3
15.2
17.1
19
15.05
16
18
20
15.8
16.8
18.9
21
1
1
1
1
21.2
22.5
25.2
27.7
28
27
24
22
0.084
0.086
0.088
0.09
645
610
545
490
P6SMB22CAT3, G
P6SMB24CAT3, G
P6SMB27CAT3, G
SZ/P6SMB30CAT3, G
22C
24C
27C
30C
18.8
20.5
23.1
25.6
5
5
5
5
20.9
22.8
25.7
28.5
22
24
27.05
30
23.1
25.2
28.4
31.5
1
1
1
1
30.6
33.2
37.5
41.4
20
18
16
14.4
0.09
0.094
0.096
0.097
450
415
370
335
SZ/P6SMB33CAT3, G
SZ/P6SMB36CAT3, G
SZ/P6SMB39CAT3, G
SZ/P6SMB43CAT3, G
33C
36C
39C
43C
28.2
30.8
33.3
36.8
5
5
5
5
31.4
34.2
37.1
40.9
33.05
36
39.05
43.05
34.7
37.8
41
45.2
1
1
1
1
45.7
49.9
53.9
59.3
13.2
12
11.2
10.1
0.098
0.099
0.1
0.101
305
280
260
240
P6SMB47CAT3, G
SZ/P6SMB51CAT3, G
P6SMB56CAT3, G
SZ/P6SMB62CAT3, G
47C
51C
56C
62C
40.2
43.6
47.8
53
5
5
5
5
44.7
48.5
53.2
58.9
47.05
51.05
56
62
49.4
53.6
58.8
65.1
1
1
1
1
64.8
70.1
77
85
9.3
8.6
7.8
7.1
0.101
0.102
0.103
0.104
220
205
185
170
P6SMB68CAT3, G
P6SMB75CAT3, G
P6SMB82CAT3, G
P6SMB91CAT3, G
68C
75C
82C
91C
58.1
64.1
70.1
77.8
5
5
5
5
64.6
71.3
77.9
86.5
68
75.05
82
91
71.4
78.8
86.1
95.5
1
1
1
1
92
103
113
125
6.5
5.8
5.3
4.8
0.104
0.105
0.105
0.106
155
140
130
120
4. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
5. VBR measured at pulse test current IT at an ambient temperature of 25C.
6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data − 600 Watt at the beginning of this group.
7. Bias Voltage = 0 V, F = 1 MHz, TJ = 25C
*The “G’’ suffix indicates Pb−Free package available. Please refer back to Ordering Information on front page.
P6SMB11CAT3 Series, SZP6SMB11CAT3 Series
http://onsemi.com
3
P , PEAK POWER (kW)
P
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2
tP
, PULSE WIDTH
1
10
100
0.1 ms1 ms10 ms 100 ms1 ms 10 ms
0.1
Figure 1. Pulse Rating Curve
01234
0
50
100
t, TIME (ms)
VALUE (%)
HALF VALUE - IPP
2
PEAK VALUE - IPP
tr 10 ms
Figure 2. Pulse Waveform
TYPICAL PROTECTION CIRCUIT
Vin VL
Zin
LOAD
Figure 3. Pulse Derating Curve
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T
A= 25 C
100
80
60
40
20
00 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (C)
120
140
160
tP
PULSE WIDTH (tP) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF
IPP
.
Figure 4. Typical Junction Capacitance vs. Bias
Voltage
P6SMB11CAT3G
P6SMB18CAT3G
P6SMB47CAT3G
P6SMB91CAT3G
BIAS VOLTAGE (VOLTS)
1 10 100
10
100
1000
C, CAPACITANCE (pF)
1
5
TJ = 25C
f = 1 MHz
P6SMB11CAT3 Series, SZP6SMB11CAT3 Series
http://onsemi.com
4
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated with
the capacitance of the device and an overshoot condition
associated with the inductance of the device and the inductance
of the connection method. The capacitive effect is of minor
importance in the parallel protection scheme because it only
produces a time delay in the transition from the operating
voltage to the clamp voltage as shown in Figure 4.
The inductive effects in the device are due to actual turn-on
time (time required for the device to go from zero current to full
current) and lead inductance. This inductive effect produces an
overshoot in the voltage across the equipment or component
being protected as shown in Figure 5. Minimizing this
overshoot is very important in the application, since the main
purpose for adding a transient suppressor is to clamp voltage
spikes. The SMB series have a very good response time,
typically < 1 ns and negligible inductance. However, external
inductive effects could produce unacceptable overshoot.
Proper circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves of
Figure 6. Average power must be derated as the lead or ambient
temperature rises above 25C. The average power derating
curve normally given on data sheets may be normalized and
used for this purpose.
At first glance the derating curves of Figure 6 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 6 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
VL
V
Vin
Vin (TRANSIENT)
VL
td
V
Vin (TRANSIENT)
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t t
Figure 5. Figure 6.
Figure 7. Typical Derating Factor for Duty Cycle
DERATING FACTOR
1 ms
10 ms
1
0.7
0.5
0.3
0.05
0.1
0.2
0.01
0.02
0.03
0.07
100 ms
0.1 0.2 0.5 2 5 10 501 20 100
D, DUTY CYCLE (%)
PULSE WIDTH
10 ms
P6SMB11CAT3 Series, SZP6SMB11CAT3 Series
http://onsemi.com
5
UL RECOGNITION
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGQ2)
under the UL standard for safety 497B and File #E210057.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
P6SMB11CAT3 Series, SZP6SMB11CAT3 Series
http://onsemi.com
6
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE H
E
bD
c
L1
L
A
A1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
2.261
0.089
2.743
0.108
2.159
0.085 ǒmm
inchesǓ
SCALE 8:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.90 2.20 2.28 0.075
INCHES
A1 0.05 0.10 0.19 0.002
b1.96 2.03 2.20 0.077
c0.15 0.23 0.31 0.006
D3.30 3.56 3.95 0.130
E4.06 4.32 4.60 0.160
L0.76 1.02 1.60 0.030
0.087 0.090
0.004 0.007
0.080 0.087
0.009 0.012
0.140 0.156
0.170 0.181
0.040 0.063
NOM MAX
5.21 5.44 5.60 0.205 0.214 0.220
HE
0.51 REF 0.020 REF
D
L1
HE
POLARITY INDICATOR
OPTIONAL AS NEEDED
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
P6SMB11CAT3/D
SURMETIC is a registered trademark of Semiconductor Components Industries, LLC.
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