Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Schottky barrier diode
RB060L-40
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Rectifying small power
Features
1)Small power mold type.
(PMDS)
2) Low IR
3) High reliability
Construction
Silicon epitaxial planar Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRM V
VRV
Io A
IFSM A
Tj C
Tstg C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit
VF1- - 0.50 V IF=2.0A
VF2- - 0.45 V IF=1.0A
IR-- 1 mAV
R=40V
θj-a - -90 Mounteing on alumina board
θj-a --120 Mounted on epxy board
2
Parameter Limits
Reverse voltage (repetitive peak) 40
Conditions
Forward voltage
Reverse voltage (DC) 40
(*1) Mounted on epoxy board. 180Half sine wave
Junction temperature 125
Storage temperature 40 to 125
Average rectified forward current
Reverse current
C/W
Parameter
Forward current surge peak （60Hz・1cyc）70
Thermal impedance
PMDS
2.0
4.2
2.0
ROHM : PMDS
JEDEC : SOD-106
①Manufacture Date
②
① ②
63
0.1±0.02
0.1
2.6±0.2
2.0±0.2
5.0±0.3
1.2±0.3
4.5±0.2
1.5±0.2
4.0±0.12.9±0.1
4.0±0.1
2.0±0.05
φ1.55±0.05
5.5±0.05
1.75±0.1
12±0.2
φ1.55
9.5±0.1
0.3
5.3±0.1
0.05
2.8MAX
1/3 2011.04 - Rev.G
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB060L-40
0
5
10
15
20
AVE:9.3ns
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
0
1
2
012345
0.1
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
Mounted on epoxy board
1ms
IM=10mA IF=1A
300us
time
0
50
100
150
200
250
300
110100
t
Ifsm
0
50
100
150
200
AVE:157.0A
8.3ms
Ifsm 1cyc
0
50
100
150
200
1 10 100
8.3ms
Ifsm
1c
y
c
8.3ms
430
440
450
460
470
480
AVE:460.4mV
Ta=25℃
IF=2A
n=30pcs
1
10
100
1000
0 5 10 15 20 25 30
0.01
0.1
1
10
100
1000
10000
100000
1000000
0 5 10 15 20 25 30 35 40
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=150℃
0.01
0.1
1
10
0 100 200 300 400 500 600
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=150℃
FORWARD VOLTAGE：V
F
(mV)
V
F
-I
F
CHARACTERISTICS
FORWARD CURRENT:I
F
(A)
REVERSE CURRENT:I
R
(uA)
REVERSE VOLTAGE：V
R
(V)
V
R
-I
R
CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
V
F
DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
I
FSM
DISRESION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:
IFSM
(A)
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io
-
Pf CHARACTERISTICS
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
f=1MHz
0
10
20
30
40
50
60
70
80
90
100
Ta=25℃
V
R
=40V
n=30pcs
AVE:9.069uA
500
510
520
530
540
550
560
570
580
590
600
AVE:579.1pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
DC
D=1/2
Sin(θ＝180)
2/3 2011.04 - Rev.G
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB060L-40
0
1
2
3
4
5
0 255075100125
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
AVERAGE RECTIFIEＤ
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
0
5
10
15
20
25
30
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
AVE:17.6kV
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
0
2
4
6
8
10
0 10203040
0
1
2
3
4
5
0 255075100125
TTj=125℃
D=t/T
tVR
Io
VR=20V
0
A
0V
T Tj=125℃
D=t/T
tVR
Io
VR=20V
0
A
0V
Sin(θ＝180)
DC
D=1/2
Sin(θ＝180)
DC
D=1/2
Sin(θ＝180)
DC
D=1/2
3/3 2011.04 - Rev.G
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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