Data Sheet Schottky barrier diode RB060L-40 Dimensions (Unit : mm) Applications Rectifying small power Land size figure (Unit : mm) 2.0 3 6 0.10.02 0.1 4.2 5.00.3 1.20.3 4.50.2 Features 1)Small power mold type. (PMDS) 2) Low IR 3) High reliability 2.0 2.60.2 PMDS 2.00.2 1.50.2 Construction Silicon epitaxial planar Structure ROHM : PMDS JEDEC : SOD-106 Manufacture Date Taping specifications (Unit : mm) 2.00.05 4.00.1 0.3 120.2 5.50.05 5.30.1 0.05 9.50.1 1.750.1 1.550.05 1.55 2.90.1 4.00.1 2.8MAX Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Average rectified forward current Io Forward current surge peak 60Hz1cyc IFSM Junction temperature Tj Storage temperature Tstg (*1) Mounted on epoxy board. 180Half sine wave Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. Limits Unit V V A A C C 40 40 2 70 125 40 to 125 Conditions Symbol VF1 Min. Typ. Max. Unit - - 0.50 V IF=2.0A VF2 - - 0.45 V IF=1.0A IR - - 1 90 120 mA VR=40V j-a j-a - 1/3 C/W Mounteing on alumina board Mounted on epxy board 2011.04 - Rev.G Data Sheet RB060L-40 1000000 Ta=125 1 Ta=25 Ta=150 Ta=-25 0.1 100 200 300 400 500 f=1MHz 10000 Ta=125 1000 Ta=75 100 Ta=25 10 1 Ta=-25 0.1 0 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 5 1 10 15 20 25 30 35 40 0 460 AVE:460.4mV 450 440 80 70 60 50 40 30 AVE:9.069uA 20 10 0 430 VF DISPERSION MAP 100 AVE:157.0A 50 0 15 10 Ifsm 8.3ms 8.3ms 1cyc 100 5 AVE:9.3ns 50 0 1 1000 t 200 150 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 100 100 2 D=1/2 Mounted on epoxy board 100 Rth(j-c) 10 IM=10mA IF=1A 1 1ms DC Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP IFSM DISRESION MAP 250 30 AVE:579.1pF 150 0 300 25 200 Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 150 20 Ct DISPERSION MAP 20 REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 15 Ta=25 f=1MHz VR=0V n=10pcs IR DISPERSION MAP 200 10 600 590 580 570 560 550 540 530 520 510 500 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 470 Ta=25 VR=40V n=30pcs 90 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 Ta=25 IF=2A n=30pcs REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) 10 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 480 PEAK SURGE FORWARD CURRENT:IFSM(A) 100 0.01 0.01 0 1000 Ta=150 100000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 10 Sin(180) 1 time 300us 0.1 0.001 0 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/3 1000 0 1 2 3 4 5 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 2011.04 - Rev.G Data Sheet RB060L-40 5 REVERSE POWER DISSIPATION:PR (W) 8 6 D=1/2 4 Sin(180) DC 2 5 0A 0V 4 DC t T 3 VR D=t/T VR=20V Tj=125 D=1/2 2 1 Sin(180) 0 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 Io 0A 0V Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIE FORWARD CURRENT:Io(A) 10 t 4 DC T VR D=t/T VR=20V Tj=125 3 D=1/2 2 1 Sin(180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 15 AVE:17.6kV 10 5 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.G Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A