1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
201.11.2003
BC 327 / BC 328 General Purpose Transistors
PNP Si-Epitaxial PlanarTransistors PNP
Power dissipation – Verlustleistung 625 mW
Plastic case TO-92
Kunststoffgehäuse (10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BC 327 BC 328
Collector-Emitter-voltage B open - VCE0 45 V 25 V
Collector-Emitter-voltage B shorted - VCES 50 V 30 V
Emitter-Base-voltage C open - VEB0 5 V
Power dissipation – Verlustleistung Ptot 625 mW 1)
Collector current – Kollektorstrom (DC) - IC800 mA
Peak Coll. current – Kollektor-Spitzenstrom - ICM 1 A
Base current – Basisstrom - IB100 mA
Junction temp. – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 65…+ 150/C
Characteristics, Tj = 25/C Kennwerte, Tj = 25/C
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 1 V, - IC = 100 mA
Group -16 hFE 100 160 250
Group -25 hFE 160 250 400
Group -40 hFE 250 400 630
- VCE = 1 V, - IC = 300 mA
Group -16 hFE 60 130
Group -25 hFE 100 200
Group -40 hFE 170 320
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
3
01.11.2003
General Purpose Transistors BC 327 / BC 328
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector-Emitter cutoff current – Kollektorreststrom
- VCE = 45 V BC 327 - ICES 2 nA 100 nA
- VCE = 25 V BC 328 - ICES 2 nA 100 nA
- VCE = 45 V, Tj = 125/C BC 327 - ICES 10 :A
- VCE = 25 V, Tj = 125/C BC 328 - ICES 10 :A
Collector-Emitter breakdown voltage
Collector-Emitter Durchbruchspannung
- IC = 10 mA BC 327 - V(BR)CES 20 V
BC 328 - V(BR)CES 45 V
- IC = 0.1 mA BC 327 - V(BR)CES 30 V
BC 328 - V(BR)CES 50 V
Emitter-Base breakdown voltage
Emitter-Basis-Durchbruchspannung
- IE = 0.1 mA - V(BR)EB0 5 V
Collector saturation volt. – Kollektor-Sättigungsspannung
- IC = 500 mA, - IB = 50 mA - VCEsat 0.7 V
Base-Emitter voltageBasis-Emitter-Spannung
- VCE = 1 V, - IC = 300 mA - VBE 1.2 V
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 50 MHz fT 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 12 pF
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 200 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren BC 337 / BC 338
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC 327-16
BC 328-16
BC 327-25
BC 328-25
BC327-40
BC328-40